Patents by Inventor John G. Poksheva

John G. Poksheva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radiation hardened field oxides for NMOS and CMOS-bulk and process for forming
    Patent number: 4994407
    Abstract: The field oxide surrounding an NMOS device or the field oxide around the NMOS device and between the NMOS and PMOS devices in CMOS is split or notched to make at least one thin field oxide region under which a degenerative P+ region is formed in the substrate to increase threshold voltages of the undesired field oxide FET.
    Type: Grant
    Filed: September 20, 1988
    Date of Patent: February 19, 1991
    Assignee: Rockwell International Corporation
    Inventors: Frank Z. Custode, John G. Poksheva
  • Radiation hardened field oxides for NMOS and CMOS-bulk and process for forming
    Patent number: 4990983
    Abstract: The field oxide surrounding an NMOS device or the field oxide around the NMOS device and between the NMOS and PMOS devices in CMOS is split or notched to make at least one thin field oxide region under which a degenerative P+ region is formed in the substrate to increase threshold voltages of the undesired field oxide FET.
    Type: Grant
    Filed: December 7, 1987
    Date of Patent: February 5, 1991
    Assignee: Rockwell International Corporation
    Inventors: Frank Z. Custode, John G. Poksheva