Abstract: A method for initializing a static random access memory (SRAM) device during power-up includes clamping one of a pair of bitlines of the SRAM device to a logic low potential while allowing the other of the pair of bitlines to be coupled to a charging logic high potential. An SRAM storage cell within the SRAM device is forced to a stable state by selectively allowing a wordline potential of a wordline associated with the SRAM storage cell to follow the charging logic high potential, thereby coupling the SRAM storage cell to the pair of bitlines.

Abstract: An electronic device including: a semiconductor substrate having an array of gate conductors, each having a length and a width, comprised of dummy gate conductors and functional gate conductors extending in a widthwise direction, the gate conductors positioned substantially parallel to each other in the widthwise direction and periodically spaced apart a fixed distance in a direction substantially perpendicular to the widthwise direction.