Abstract: Various embodiments provide methods, apparatuses, systems, or computer program products for performing decreased crosstalk atomic object reading/detection. A controller is operatively connected to components of a system comprising a confinement apparatus comprising RF electrodes defining an RF null axis and a plurality of longitudinal electrodes. The components comprise voltage sources and manipulation sources. The controller is configured to cause an atomic object being read and neighboring atomic object(s) to be confined by the confinement apparatus; and cause the voltage sources to provide first control signals to longitudinal electrodes. The first control signals cause the longitudinal electrodes to generate a push field configured to cause one of the atomic object being read or the neighboring atomic object(s) to move off the RF null axis.

Abstract: Embodiments relate to initializing and/or performing state preparation for an atomic object. The controller controls first manipulation sources to provide first manipulation signals and second manipulation sources to provide second manipulation signals. The first and second manipulation signals are incident on the atomic object. The atomic object has a nuclear spin greater than one half. A ground state manifold of the atomic object comprises one or more selected ground manifold states and non-selected ground manifold states. The first manipulation signals are configured to drive transitions from the non-selected ground manifold states to one or more pumped manifolds of the atomic object and suppress transitions out of the selected ground manifold states. The second manipulation signals are configured to stimulate the atomic object to decay a pumped manifold into a decayed state, wherein there is a non-zero probability that the decayed state is one of the selected ground manifold states.

Abstract: A controller of a QCCD-based quantum computer is configured to perform arbitrary angle two-qubit gates using global single-qubit gates and rotations of arbitrary angles and/or individual single-qubit gates that include two-qubit gate primitives, such as a phase-independent anti-symmetric two-qubit gate, and that are not individually addressed.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: Various embodiments provide methods, apparatuses, systems, or computer program products for performing decreased crosstalk atomic object reading/detection. A controller is operatively connected to components of a system comprising a confinement apparatus comprising RF electrodes defining an RF null axis and a plurality of longitudinal electrodes. The components comprise voltage sources and manipulation sources. The controller is configured to cause an atomic object being read and neighboring atomic object(s) to be confined by the confinement apparatus; and cause the voltage sources to provide first control signals to longitudinal electrodes. The first control signals cause the longitudinal electrodes to generate a push field configured to cause one of the atomic object being read or the neighboring atomic object(s) to move off the RF null axis.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: A quantum computing D-state AC-Stark shift gate system comprises at least one gate manipulation source and one or more ions trapped in an ion trap. The at least one gate manipulation source is configured to generate a first gate manipulation signal and a second gate manipulation signal. The first and second gate manipulation signals couple an ion between a set of S-states and a set of D-states. The first and second gate manipulation signals apply a force to an ion of the one or more ions that is dependent on the internal state of the ion. The first and second gate manipulation signals are configured to couple internal states of the ions to their motional state without appreciably altering a population of the ions within the set of S-states.