Abstract: A miniature electron optical column apparatus is disclosed. The apparatus may include a set of electron-optical elements configured to direct a primary electron beam to a sample. The set of electron-optical elements may include an objective lens. The apparatus may also include a deflection sub-system. The deflection sub-system may include one or more pre-lens deflectors positioned between an electron beam source and the objective lens. The deflection sub-system may also include a post-lens deflector positioned between the objective lens and the sample. The deflection sub-system may also include a post-lens miniature optical element positioned between the objective lens and the sample.

Abstract: A miniature electron beam column in combination with magnetostatic lenses to produce very high-performance miniature electron or ion beam columns. Silicon-based electron optical components provide high-accuracy formation and alignment of critical optical elements and the magnetic lenses provide low-aberration focusing or condensing elements. Accurate assembly of the silicon and magnetic components is achievable via the multilayered assembly techniques and allows for achieving high performance.

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P?/N+ or an N+/N?/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Abstract: A segmented detector device with backside illumination. The detector is able to collect and differentiate between secondary electrons and backscatter electrons. The detector includes a through-hole for passage of a primary electron beam. After hitting a sample, the reflected secondary and backscatter electrons are collected via a vertical structure having a P+/P?/N+ or an N+/N?/P+ composition for full depletion through the thickness of the device. The active area of the device is segmented using field isolation insulators located on the front side of the device.

Abstract: A system is disclosed. In one embodiment, the system includes a scanning electron microscopy sub-system including an electron source configured to generate an electron beam and an electron-optical assembly including one or more electron-optical elements configured to direct the electron beam to the specimen. In another embodiment, the system includes one or more grounding paths coupled to the specimen, the one or more grounding paths configured to generate one or more transmission signals based on one or more received electron beam-induced transmission currents. In another embodiment, the system includes a controller configured to: generate control signals configured to cause the scanning electron microscopy sub-system to scan the portion of the electron beam across a portion of the specimen; receive the transmission signals via the one or more grounding paths; and generate transmission current images based on the transmission signals.

Abstract: A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

Abstract: A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

Abstract: A scanning electron microscopy (SEM) system includes a plurality of electron beam sources configured to generate a primary electron beam. The SEM system includes an electron-optical column array with a plurality of electron-optical columns. An electron-optical column includes a plurality of electron-optical elements. The plurality of electron-optical elements includes a deflector layer configured to be driven via a common controller shared by at least some of the plurality of electron-optical columns and includes a trim deflector layer configured to be driven by an individual controller. The plurality of electron-optical elements is arranged to form an electron beam channel configured to direct the primary electron beam to a sample secured on a stage, which emits an electron beam in response to the primary electron beam. The electron-optical column includes an electron detector. The electron beam channel is configured to direct the electron beam to the electron detector.

Abstract: A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.

Abstract: A multi-column scanning electron microscopy (SEM) system is disclosed. The SEM system includes a source assembly. The source assembly includes two or more electron beam sources configured to generate a plurality of electron beams. The source assembly also includes two or more sets of positioners configured to actuate the two or more electron beam sources. The SEM system also includes a column assembly. The column assembly includes a plurality of substrate arrays. The column assembly also includes two or more electron-optical columns formed by a set of column electron-optical elements bonded to the plurality of substrate arrays. The SEM system also includes a stage configured to secure a sample that at least one of emits or scatters electrons in response to the plurality of electron beams directed by the two or more electron-optical columns to the sample.

Abstract: A multi-column scanning electron microscopy (SEM) system includes a column assembly, where the column assembly includes a first substrate array assembly and at least a second substrate array assembly. The system also includes a source assembly, the source assembly including two or more illumination sources configured to generate two or more electron beams and two or more sets of a plurality of positioners configured to adjust a position of a particular illumination source of the two or more illumination sources in a plurality of directions. The system also includes a stage configured to secure a sample, where the column assembly directs at least a portion of the two or more electron beams onto a portion of the sample.

Abstract: One embodiment relates to an apparatus for adjustment of local magnetic strength in a magnetic device. A stage holds the magnetic device, and a sensor measures a magnetic field at locations above the magnetic device so as to generate magnetic field data. A computer system detects a non-uniformity in the magnetic field from the magnetic field data and determines a location and a duration for application of a pulsed laser beam to correct the non-uniformity. A laser device applies the pulsed laser beam at said location for said duration. Another embodiment relates to a method of adjusting local magnetic strength in a magnetic device. Another embodiment relates to a system for fine-tuning a magnet array with localized energy delivery. Other embodiments, aspects and features are also disclosed.

Abstract: Apparatus for providing pulsed or continuous energy in a process chamber are provided herein. The apparatus may include: a process chamber body of the semiconductor process chamber; one or more solid state source arrays providing pulsed or continuous energy to the process chamber, wherein each of the one or more solid state source arrays include a substrate having a plurality of solid state light sources disposed on a first surface of the substrate, wherein the plurality of solid state light sources are connected in series and in a recursive pattern on the first surface of the substrate, and a heat sink coupled to a second surface of the substrate configured to remove heat from the substrate; and a power source coupled to the one or more solid state source arrays to electrically power the plurality of solid state sources.

Abstract: Apparatus for providing heat energy to a process chamber are provided herein. The apparatus may include a process chamber body of the process chamber, a solid state source array having a plurality of solid state sources, disposed on a first substrate, to provide heat energy to the process chamber to heat a target component disposed in the process chamber body, and at least one reflector disposed on the first substrate proximate to one or more of the plurality of solid state sources to direct heat energy provided by the one or more of the plurality of solid state sources towards the target component.

Abstract: A metrology system is configured to provide visual inspection of a workpiece, three-dimensional magnetic field map, and height measurement. A stage is configured to bring points of interest at the workpiece under the desired tool for measurement. The optical field, magnetic field, and height information can be used independently or together in order to correlate defects in the manufacturing process of the workpiece. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A charged particle detection device has an active portion for configured to produce a signal in response secondary charged particles emitted from a sample landing on the active portion. The active portion is shaped to accommodate an expected asymmetric pattern of the secondary charged particles at a detector. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: An electromagnetic wakefield detector placed in close proximity to a design trajectory of a non-relativistic charged particle beam produces an optical signal in response to passage of the charged particle beam without interrupting the charged particle beam. A photon detector receives the optical signal and produces a corresponding output. The wakefield detector may be based on the electro optic effect. Specifically, the detector may measure the effect of the charged particle beam a beam of radiation on the phase of radiation travelling parallel to the beam in a nearby electro optic waveguide. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Apparatus for providing pulsed or continuous energy in a process chamber are provided herein. The apparatus may include a lamphead including a set of lamps, wherein the first set of lamps are not solid state light sources, and a set of solid state light sources disposed on the lamp head, to provide pulsed or continuous energy to the process chamber.

Abstract: One embodiment relates to an apparatus for adjustment of local magnetic strength in a magnetic device. A stage holds the magnetic device, and a sensor measures a magnetic field at locations above the magnetic device so as to generate magnetic field data. A computer system detects a non-uniformity in the magnetic field from the magnetic field data and determines a location and a duration for application of a pulsed laser beam to correct the non-uniformity. A laser device applies the pulsed laser beam at said location for said duration. Another embodiment relates to a method of adjusting local magnetic strength in a magnetic device. Another embodiment relates to a system for fine-tuning a magnet array with localized energy delivery. Other embodiments, aspects and features are also disclosed.

Abstract: An electromagnetic wakefield detector placed in close proximity to a design trajectory of a non-relativistic charged particle beam produces an optical signal in response to passage of the charged particle beam without interrupting the charged particle beam. A photon detector receives the optical signal and produces a corresponding output. The wakefield detector may be based on the electro optic effect. Specifically, the detector may measure the effect of the charged particle beam a beam of radiation on the phase of radiation travelling parallel to the beam in a nearby electro optic waveguide. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.