Abstract: Disclosed herein are replaceable filter frame gaskets and air filters having the same. The gasket is secured elastically to a filter frame of the air filter, making the gasket easily reusable and removable from the air filter.

Abstract: An optomechanical accelerometer includes: a fiducial mass for a microscale Fabry-Perot optical cavity; a proof mass for the microscale Fabry-Perot optical cavity, such that the proof mass oscillates in a displacement motion toward and away from the fiducial mass in response to acceleration of the optomechanical accelerometer; a basal member; microscale beams that mechanically suspend the proof mass from the basal member; and the microscale Fabry-Perot optical cavity that has a cavity resonance at a cavity resonance wavelength provided by the cavity length, receives excitation radiation at an excitation wavelength that is reflected in the cavity as dynamic cavity light when the excitation wavelength is resonant with the cavity resonance wavelength, and transmits the dynamic cavity light as cavity output light when the dynamic cavity light is produced from the excitation radiation.

Abstract: Disclosed herein are replaceable filter frame gaskets and air filters having the same. The gasket is secured elastically to a filter frame of the air filter, making the gasket easily reusable and removable from the air filter.

Abstract: A filter extender that comprises a quadrilateral tube is provided, along with an air filter configured to mate with the same.

Abstract: An optical sensor readout Interrogates an optical sensor and includes: a microcavity sensor that receives an optical frequency comb, produces a post-sensor optical frequency comb from the optical frequency comb based on a physical perturbation subjected to the microcavity sensor, and communicates the post-sensor optical frequency comb to a photo detector; an electro optic modulator in optical communication with the microcavity sensor and that receives input light and a radiofrequency drive signal, produces the optical frequency comb from the input light based on the radiofrequency drive signal, and communicates the optical frequency comb to the microcavity sensor; and the photo detector in optical communication with the microcavity sensor and that: receives the post-sensor optical frequency comb from the microcavity sensor; receives frequency shifted light; and produces a radiofrequency interferogram from interference between the post-sensor optical frequency comb and the frequency shifted light.

Abstract: A selection scheme for crosspoint memory is described. In one example, the selection voltage applied across the memory cell is slowly ramped up. Once the memory cell thresholds, the voltage is reduced to a level for performing the read or write operation. Reducing the voltage once the specific cell has been selected (e.g., thresholds) minimizes the additional transient current which might be generated by further increasing the selection bias applied during read or write operation. The reduction in transient current can lead to an improvement in read disturb and write endurance issues. The selection ramp-rate and bias post-selection can be set differently depending on the cell location inside the memory array to further improve cell performance.

Abstract: An optomechanical accelerometer includes: a fiducial mass for a microscale Fabry-Perot optical cavity; a proof mass for the microscale Fabry-Perot optical cavity, such that the proof mass oscillates in a displacement motion toward and away from the fiducial mass in response to acceleration of the optomechanical accelerometer; a basal member; microscale beams that mechanically suspend the proof mass from the basal member; and the microscale Fabry-Perot optical cavity that has a cavity resonance at a cavity resonance wavelength provided by the cavity length, receives excitation radiation at an excitation wavelength that is reflected in the cavity as dynamic cavity light when the excitation wavelength is resonant with the cavity resonance wavelength, and transmits the dynamic cavity light as cavity output light when the dynamic cavity light is produced from the excitation radiation.

Abstract: An optomechanical ultrasound detector includes: a micromirror substrate; a mechanical resonator that receives ultrasound waves, oscillates at resonator frequency fr, changes cavity length Lc, and produces intra-cavity light; and an optical microcavity between the micromirror substrate and the mechanical resonator with cavity length Lc and cavity resonance frequency fc formed by the mechanical resonator and the micromirror substrate, such that the micromirror substrate produces cavity output light from the intra-cavity light, wherein the cavity output light optically encodes information about the ultrasound waves received by the mechanical resonator.

Abstract: A memory cell design is disclosed. The design is particularly well-suited for three-dimensional cross-point (3D X-point) memory configurations. Various embodiments of the memory cell design include one or more electrodes having an increased resistance compared to existing memory cell designs or compared to other electrodes within a same memory cell. A memory device includes an array of memory cells with each memory cell arranged between a word line and a bit line of the memory device. Some embodiments include additional material layers to increase memory cell resistance. Some embodiments include electrodes having an increased thickness to increase the resistance. Some embodiments include electrodes having a composition with a higher resistivity. Some embodiments include electrodes with increased interface resistance. Some embodiments include a combination of such features.

Abstract: A pulsed laser interferometer includes: a pulsed laser; a vibration controller that produces a vibration control signal that controls a vibrational frequency and vibrational amplitude of a structural member; an interferometer controller; a pathlength control stage that changes an optical pathlength for laser pulses; a pathlength reflector that moves in concert with the pathlength control stage to change the optical pathlength of propagation for the laser pulses; a light pulse detector that produces a light pulse detector signal; an interference light detector that produces an interference frequency signal; a signal mixer that produces a reference frequency signal; and a phase-sensitive detector that produces a vibrational amplitude signal and a vibrational phase signal from the interference frequency signal referenced to the reference frequency signal.

Abstract: Various embodiments of a three-dimensional cross-point (3D X-point) memory cell design include one or more electrodes having an increased resistance compared to existing memory cell designs or compared to other electrodes within a same memory cell. A memory device includes an array of memory cells with each memory cell arranged between a word line and a bit line of the memory device. Some embodiments include additional material layers to increase memory cell resistance. Some embodiments include electrodes having an increased thickness to increase the resistance. Some embodiments include electrodes having a composition with a higher resistivity. Some embodiments include electrodes with increased interface resistance. Some embodiments include a combination of such features. In any case, the resulting increased memory cell resistance causes a reduction in the transient selection current for the given memory cell.

Abstract: Disclosed herein are replaceable filter frame gaskets and air filters having the same. The gasket is secured elastically to a filter frame of the air filter, making the gasket easily reusable and removable from the air filter.

Abstract: A selection scheme for crosspoint memory is described. In one example, the selection voltage applied across the memory cell is slowly ramped up. Once the memory cell thresholds, the voltage is reduced to a level for performing the read or write operation. Reducing the voltage once the specific cell has been selected (e.g., thresholds) minimizes the additional transient current which might be generated by further increasing the selection bias applied during read or write operation. The reduction in transient current can lead to an improvement in read disturb and write endurance issues. The selection ramp-rate and bias post-selection can be set differently depending on the cell location inside the memory array to further improve cell performance.

Abstract: A selection scheme for crosspoint memory is described. In one example, the selection voltage applied across the memory cell is slowly ramped up. Once the memory cell thresholds, the voltage is reduced to a level for performing the read or write operation. Reducing the voltage once the specific cell has been selected (e.g., thresholds) minimizes the additional transient current which might be generated by further increasing the selection bias applied during read or write operation. The reduction in transient current can lead to an improvement in read disturb and write endurance issues. The selection ramp-rate and bias post-selection can be set differently depending on the cell location inside the memory array to further improve cell performance.

Abstract: A memory cell design is disclosed. The design is particularly well-suited for three-dimensional cross-point (3D X-point) memory configurations. Various embodiments of the memory cell design include one or more electrodes having an increased resistance compared to existing memory cell designs or compared to other electrodes within a same memory cell. A memory device includes an array of memory cells with each memory cell arranged between a word line and a bit line of the memory device. Some embodiments include additional material layers to increase memory cell resistance. Some embodiments include electrodes having an increased thickness to increase the resistance. Some embodiments include electrodes having a composition with a higher resistivity. Some embodiments include electrodes with increased interface resistance. Some embodiments include a combination of such features.

Abstract: A pulsed laser interferometer includes: a pulsed laser; a vibration controller that produces a vibration control signal that controls a vibrational frequency and vibrational amplitude of a structural member; an interferometer controller; a pathlength control stage that changes an optical pathlength for laser pulses; a pathlength reflector that moves in concert with the pathlength control stage to change the optical pathlength of propagation for the laser pulses; a light pulse detector that produces a light pulse detector signal; an interference light detector that produces an interference frequency signal; a signal mixer that produces a reference frequency signal; and a phase-sensitive detector that produces a vibrational amplitude signal and a vibrational phase signal from the interference frequency signal referenced to the reference frequency signal.

Abstract: In one embodiment, an apparatus comprises read circuitry to apply a read voltage to a three dimensional crosspoint (3DXP) memory cell; and write setback circuitry to apply a first setback pulse having a first magnitude to the 3DXP memory cell in response to the application of the read voltage, wherein applying the first setback pulse comprises bypassing a current mirror that is to limit or control a magnitude of a second setback pulse applied to the 3DXP memory cell when the current mirror is coupled to the 3DXP memory cell.

Abstract: Embodiments of the inventions include a filter frame and an air filter. The air filter has filtration media and a wood fiber-based filter frame securing filtration media. The filter frame having an upstream facing surface. The upstream facing surface having an orientation substantially perpendicular to a direction of air flow through the filter. The filter additionally having a plurality of sides coupled to the upstream facing surface, the plurality of sides having an orientation substantially parallel to the direction of air flow through the filter, the direction of air flow through the filter defining an exterior side of the filter frame; and a folded edge defined between the upstream facing surface and a first side of the plurality of sides, the folded edge having a debossing on the exterior side of the filter frame.

Abstract: In one embodiment, an apparatus comprises read circuitry to apply a read voltage to a three dimensional crosspoint (3DXP) memory cell; and write setback circuitry to apply a first setback pulse having a first magnitude to the 3DXP memory cell in response to the application of the read voltage, wherein applying the first setback pulse comprises bypassing a current mirror that is to limit or control a magnitude of a second setback pulse applied to the 3DXP memory cell when the current mirror is coupled to the 3DXP memory cell.