Abstract: Automatic storage system configuration for mediation services that includes: determining that a particular storage system of the storage systems is not configured to request mediation from a mediation target for mediation between storage systems synchronously replicating a dataset; requesting, by the particular storage system from a configuration service, configuration information indicating one or more service handles for a mediation service; and configuring, in dependence upon the one or more service handles received from the configuration service, a mediation handler to communicate with the mediation service responsive to detecting a communication fault with one of the storage systems.

Abstract: Processes are disclosed for producing electronic interconnect devices, particularly semi-conductor wafers, with metal interconnect traces thereon wherein the surface of said device has improved planarity. Said planarity is achieved initially through the use of pulse reverse electrolytic plating techniques. Planarity is further enhanced by cathodically protecting the metal interconnect traces during the polishing operation. Cathodic protection is achieved by overtly applying a cathodic charge to said traces and/or by contacting said traces, during polishing, with a metal that is capable of sacrificial corrosion when in contact with the metal of the interconnect traces.

Abstract: A composition and process for the precision polishing of substrates such as semi-conductor chips is disclosed. The composition and process make use of soluble or insoluble organic nitro compounds as oxidizers and/or abrasive particles. Nitrogen containing reduction products of the foregoing organic nitro compounds may also be included.

Abstract: The use of organic nitro compounds, such as nitrobenzene sulfonic acids, in chemical mechanical polishing compositions is disclosed. Chemical mechanical polishing slurries are widely used in polishing and planarizing silicon wafers and other fine surfaces. Inorganic nitro compounds are widely used in these slurries as oxidant sources. However, organic nitro compounds, particularly aromatic nitro compounds, are here suggested as advantageous substitutes.

Abstract: A composition and process for the precision polishing of substrates such as semi-conductor chips is disclosed. The composition and process make use of soluble or insoluble organic nitro compounds as oxidizers and/or abrasive particles. Nitrogen containing reduction products of the foregoing organic nitro compounds may also be included.

Abstract: Processes are disclosed for producing electronic interconnect devices, particularly semi-conductor wafers, with metal interconnect traces thereon wherein the surface of said device has improved planarity. Said planarity is achieved initially through the use of pulse reverse electrolytic plating techniques. Planarity is further enhanced by cathodically protecting the metal interconnect traces during the polishing operation. Cathodic protection is achieved by overtly applying a cathodic charge to said traces and/or by contacting said traces, during polishing, with a metal that is capable of sacrificial corrosion when in contact with the metal of the interconnect traces.

Abstract: The present invention provides a chemical metal polishing (CMP) method with improved flexibility and improved processing window, especially as it relates to the chemical aspect of CMP technology. Broadly speaking, the invention has two aspects: according to one aspect, the invention provides a new CMP composition, comprising as an oxidizer, at least one of inorganic halogen derivative and dissolved oxygen while in a second aspect the invention provides an improved method for polishing metals.

Abstract: The present invention provides a novel, structurally improved, abrasive agent, with improved surface properties resulting, inter alia, in enhanced wettability, dispersability and bonding. More specifically, the present invention provides according to an aspect thereof, an abrasive agent comprising abrasive particles, said particles being in the form of a composite material comprising more than one metal oxide material. In another aspect, the present invention provides an abrasive agent comprising metal oxide abrasive particles, said particles being coated at least partially with an extraneous metal or metal bearing layer.

Abstract: This invention discloses fixed abrasive chemical mechanical polishing pads, wherein the pad itself comprises at least one material selected from the group consisting of oxidants, wetting agents and other additives normally delivered via a polishing slurry, which assist in the polishing effectiveness of the pad. The improved polishing pad provides both the benefit of a fixed abrasive and the benefits of slurry based polishing systems.

Abstract: The present invention provides a novel, structurally improved, abrasive agent, with improved surface properties resulting, inter alia, in enhanced wettability, dispersability and bonding. More specifically, the present invention provides according to an aspect thereof, an abrasive agent comprising abrasive particles, said particles being in the form of a composite material comprising more than one metal oxide material. In another aspect, the present invention provides an abrasive agent comprising metal oxide abrasive particles, said particles being coated at least partially with an extraneous metal or metal bearing layer.

Abstract: Chemical mechanical polishing (“CMP”) systems utilize specially designed pads to precision polish ultra-flat surfaces of silicon wafers and other similar materials. This invention proposes improving the longevity and performance of CMP pads by modifying the surface properties of the pads through treatment of the surface with radiation or through the inclusion of metals or metal oxides in the surface layer of the pad.

Abstract: This invention discloses fixed abrasive chemical mechanical polishing pads, wherein the pad itself comprises at least one material selected from the group consisting of oxidants, wetting agents and other additives normally delivered via a polishing slurry, which assist in the polishing effectiveness of the pad. The improved polishing pad provides both the benefit of a fixed abrasive and the benefits of slurry based polishing systems.

Abstract: An article of manufacture produced by a method for electroless plating a metallic layer on the surface of a non-metallic substrate. The method comprises (a) exposing the non-metallic substrate to a solution comprising non-precious metal ions so as to obtain a non-metallic substrate covered with a layer of non-precious metal ions; and (b) exposing the covered non-metallic substrate obtained in step (a) to a reducing solution comprising a reducing agent capable of reducing the metal ions that cover the substrate from their oxidation state in step (a) to a lower oxidation state, preferably to zero valence state. In a preferred embodiment, metallization is accomplished by inducing precipitation of metal, e.g. copper, on the surface to be metallized (this effect also being referred to as “plate-out”), via decomposition of the electroless solution. The inventive process contrasts with the prior art, wherein electroless copper deposition is predominantly initiated or triggered through a Pc-bearing layer.

Abstract: The present invention provides a chemical metal polishing (CMP) method with improved flexibility and improved processing window, especially as it relates to the chemical aspect of CMP technology. Broadly speaking, the invention has two aspects: according to one aspect, the invention provides a new CMP composition, comprising as an oxidizer, at least one of inorganic halogen derivative and dissolved oxygen while in a second aspect the invention provides an improved method for polishing metals.

Abstract: The present invention provides a method for improving interfacial chemical reactions of a solid workpiece contacted with a liquid solution, said method comprising pre-heating the workpiece prior to immersion thereof in said liquid solution. The pre-heating may be carried out up to a temperature that is practicable without impairing the workpiece.

Abstract: The use of organic nitro compounds, such as nitrobenzene sulfonic acids, in chemical mechanical polishing compositions is disclosed. Chemical mechanical polishing slurries are widely used in polishing and planarizing silicon wafers and other fine surfaces. Inorganic nitro compounds are widely used in these slurries as oxidant sources. However, organic nitro compounds, particularly aromatic nitro compounds, are here suggested as advantageous substitutes.

Abstract: A method of depositing metal on the surface of a silicon wafer. The method comprises (i) contacting the silicon wafer with a solution comprising non-precious metal ions, and (ii) thereafter contacting the silicon wafer with a solution comprising a reducing agent. The silicon wafer is preferably contacted with the foregoing solution by creating a puddle of the solution on the surface of the wafer.

Abstract: A composition useful in planarizing metal or semi-conductor surfaces, especially copper surfaces, is disclosed. The composition disclosed comprises cupric salts as an oxidizing agent and also preferably comprises complexing agents such as ethylene diamine tetraocetic acid. The polishing rate can be varied by adjusting the pH and/or temperature of the composition.

Abstract: A method and composition for improving the deposition plating rate of electroless copper. The invention presents embodiments comprising using elevated plating temperatures at the substrate-solution interface. This is coupled with suitably designed bath compositions, to preserve the electroless bath stability, required to improve the deposition plating rate of electroless copper. In one embodiment, the electroless bath composition comprises suitable individual Cu++ and Cu+ complexing agent(s), or a combination of complexing agents, surfactants, organic polymer additives, and the like, adapted and suitably optimized. For example, potential organic additive types or surfactants can be Polyoxes; Pluronics; Polyols; Polyglycols; Carbowaxes; Hydroxy ethyl cellulose (HEC), carboxy acetylenic, or fluocarbon acetylenic surfactants. The method and composition of the present invention enable the production of electroless copper coatings with improved adhesion to the substrate.

Abstract: A method for electroless plating a metallic layer on the surface of a non-metallic substrate. The method comprises (a) exposing the non-metallic substrate to a solution comprising non-precious metal ions so as to obtain a non-metallic substrate covered with a layer of non-precious metal ions; and (b) exposing the covered non-metallic substrate obtained in step (a) to a reducing solution comprising a reducing agent capable of reducing the metal ions that cover the substrate from their oxidation state in step (a) to a lower oxidation state, preferably to zero valence state. In a preferred embodiment, metallization is accomplished by inducing precipitation of metal, e.g. copper, on the surface to be metallized (this effect also being referred to as “plate-out”), via decomposition of the electroless solution. The inventive process contrasts with the prior art, wherein electroless copper deposition is predominantly initiated or triggered through a Pd-bearing layer.