Patents by Inventor John H. Curtin

John H. Curtin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for processing wafers in a multi station common chamber reactor
    Patent number: 5091217
    Abstract: Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.
    Type: Grant
    Filed: September 25, 1990
    Date of Patent: February 25, 1992
    Assignee: Advanced Semiconductor Materials, Inc.
    Inventors: H. Peter W. Hey, William A. Mazak, Ravinder K. Aggarwal, John H. Curtin, Paul B. Brown, Joe R. Smith
  • High throughput multi station processor for multiple single wafers
    Patent number: 4987856
    Abstract: Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.
    Type: Grant
    Filed: May 22, 1989
    Date of Patent: January 29, 1991
    Assignee: Advanced Semiconductor Materials America, Inc.
    Inventors: H. Peter W. Hey, William A. Mazak, Ravinder K. Aggarwal, John H. Curtin