Patents by Inventor John Hollands

John Hollands has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250259828
    Abstract: Various embodiments herein relate to apparatuses and methods for distortion of pulses for wafer biasing. In some embodiments, a method is provided, the method comprising: causing a distorted pulse to be applied to an electrode of a pedestal such that the distorted pulse at least partially compensates for attenuation between the pedestal and the substrate, and such that a waveform resulting from the distorted pulse, when imparted to the substrate, is substantially square.
    Type: Application
    Filed: April 29, 2025
    Publication date: August 14, 2025
    Inventors: Karl Frederick Leeser, John Holland
  • Patent number: 12354840
    Abstract: A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.
    Type: Grant
    Filed: January 17, 2024
    Date of Patent: July 8, 2025
    Assignee: Lam Research Corporation
    Inventors: Ranadeep Bhowmick, John Holland, Felix Leib Kozakevich, Bing Ji, Alexei Marakhtanov
  • Publication number: 20250218088
    Abstract: Systems and methods for content generation are provided. A method includes obtaining data indicative of selection, by a user, of a content element depicted within a predictive content generation space using a tool of the predictive content generation space. The tool is respectively associated with a machine learning tasks. The tool is operable to select at least a portion of each of one or more content elements depicted within the predictive content generation space. The method includes processing data descriptive of the at least the portion of the content element with a machine-learned model to obtain predicted content. The machine-learned model is trained to perform the machine learning task associated with the tool. The method includes generating one or more predicted content elements within the predictive content generation space. The one or more predicted content elements are descriptive of the predicted content.
    Type: Application
    Filed: March 21, 2025
    Publication date: July 3, 2025
    Inventors: Robert Marchant, Henry John Holland, Tríona Eidín Butler, Corbin Alexander Cunningham, Gerard Serra Segarra, David Matthew Jones
  • Patent number: 12340989
    Abstract: An edge ring system comprising a substrate support configured to support a substrate during plasma processing and including a baseplate and an upper layer arranged on the baseplate. An edge ring support includes a first body and an electrostatic clamping electrode arranged in the first body. The edge ring support is arranged above the baseplate and radially outside of the substrate during processing. An edge ring includes a second body arranged on and electrostatically clamped to the edge ring support during plasma processing.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: June 24, 2025
    Assignee: Lam Research Corporation
    Inventors: Alexander Matyushkin, Keith Comendant, Adam Christopher Mace, Darrell Ehrlich, John Holland, Felix Leib Kozakevich, Alexei Marakhtanov
  • Publication number: 20250191882
    Abstract: A method for applying RF power in a plasma process chamber is provided, including: generating a first RF signal; generating a second RF signal; generating a third RF signal; wherein the first, second, and third RF signals are generated at different frequencies; combining the first, second and third RF signals to generate a combined RF signal, wherein a wave shape of the combined RF signal is configured to approximate a sloped square wave shape; applying the combined RF signal to a chuck in the plasma process chamber.
    Type: Application
    Filed: February 14, 2025
    Publication date: June 12, 2025
    Inventors: Ranadeep Bhowmick, Felix Kozakevich, Alexei Marakhtanov, John Holland, Eric Hudson
  • Patent number: 12315705
    Abstract: Various embodiments herein relate to apparatuses and methods for distortion of pulses for wafer biasing. In some embodiments, a method is provided, the method comprising: causing a distorted pulse to be applied to an electrode of a pedestal such that the distorted pulse at least partially compensates for attenuation between the pedestal and the substrate, and such that a waveform resulting from the distorted pulse, when imparted to the substrate, is substantially square.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: May 27, 2025
    Assignee: Lam Research Corporation
    Inventors: Karl Frederick Leeser, John Holland
  • Publication number: 20250140526
    Abstract: A method for reducing reflected radio frequency (RF) power is described. The method includes receiving a voltage signal from an output of a match. The method further includes dividing the voltage signal into a plurality of bins and identifying a bin from the plurality of bins that includes a zero crossing. The bin is associated with a frequency of a high frequency (HF) signal. The method also includes applying a fixed multiplier to the frequency of the HF signal to generate a plurality of offsets. The method includes operating an HF RF generator according to the plurality of offsets during a time period in which the voltage signal is positive or negative.
    Type: Application
    Filed: December 21, 2022
    Publication date: May 1, 2025
    Inventors: Ranadeep Bhowmick, Alexei Marakhtanov, Felix Leib Kozakevich, John Holland, Bing Ji
  • Patent number: 12266505
    Abstract: A method for achieving uniformity in an etch rate is described. The method includes receiving a voltage signal from an output of a match, and determining a positive crossing and a negative crossing of the voltage signal for each cycle of the voltage signal. The negative crossing of each cycle is consecutive to the positive crossing of the cycle. The method further includes dividing a time interval of each cycle of the voltage signal into a plurality of bins. For one or more of the plurality of bins associated with the positive crossing and one or more of the plurality of bins associated with the negative crossing, the method includes adjusting a frequency of a radio frequency generator to achieve the uniformity in the etch rate.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: April 1, 2025
    Assignee: Lam Research Corporation
    Inventors: Alexei Marakhtanov, Felix Leib Kozakevich, Ranadeep Bhowmick, Bing Ji, John Holland
  • Patent number: 12255052
    Abstract: A method for applying RF power in a plasma process chamber is provided, including: generating a first RF signal; generating a second RF signal; generating a third RF signal; wherein the first, second, and third RF signals are generated at different frequencies; combining the first, second and third RF signals to generate a combined RF signal, wherein a wave shape of the combined RF signal is configured to approximate a sloped square wave shape; applying the combined RF signal to a chuck in the plasma process chamber.
    Type: Grant
    Filed: July 6, 2021
    Date of Patent: March 18, 2025
    Assignee: Lam Research Corporation
    Inventors: Ranadeep Bhowmick, Felix Kozakevich, Alexei Marakhtanov, John Holland, Eric Hudson
  • Publication number: 20250054730
    Abstract: A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.
    Type: Application
    Filed: October 28, 2024
    Publication date: February 13, 2025
    Inventors: Ranadeep Bhowmick, Alexei Marakhtanov, Felix Leib Kozakevich, John Holland
  • Publication number: 20250054778
    Abstract: An assembly for a processing chamber of a substrate processing system includes a first component, a second component, and a thermal interface material arranged between the first component and the second component. At least one of the first component and the second component is configured to be exposed to plasma within the processing chamber, the thermal interface material has a first surface that faces and is in direct contact with the first component and a second surface that faces and is in direct contact with the second component the thermal interface material is comprised of a silicon polymer with at least one of aligned carbon fibers and carbon nanotubes (CNTs), wherein the at least one of the carbon fibers and the CNTs are aligned in a direction perpendicular to the first surface and the second surface.
    Type: Application
    Filed: December 8, 2022
    Publication date: February 13, 2025
    Inventors: Anthony DE LA LLERA, Pratik MANKIDY, John HOLLAND
  • Publication number: 20250043425
    Abstract: Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.
    Type: Application
    Filed: October 23, 2024
    Publication date: February 6, 2025
    Inventors: Pratik Mankidy, John Holland, Anthony de la Llera, Rajesh Dorai
  • Publication number: 20250006470
    Abstract: An outer upper electrode for a capacitively coupled plasma (CCP) chamber is provided. The outer upper electrode is configured to surround an upper electrode of the CCP chamber. The outer upper electrode includes a horizontal section and a vertical section. The vertical section is substantially perpendicular to a surface of the upper electrode that faces a lower electrode of the CCP chamber. The vertical section has an inner surface that faces and surrounds the process space. The outer upper electrode can be powered with an RF source, a DC source, or coupled to filters. The outer upper electrode, when powered, is configured to generate secondary electrons that are accelerated in the high voltage RF or DC sheath transverse to the upper and lower electrodes and normal to an inner surface of the vertical section.
    Type: Application
    Filed: September 28, 2022
    Publication date: January 2, 2025
    Inventors: Alexei Marakhtanov, Bing Ji, Kenneth Lucchesi, John Holland
  • Publication number: 20240420929
    Abstract: A system for etching a wafer is provided. In one example, the system includes a lower electrode and an upper electrode disposed above the lower electrode. The system further includes an edge ring surrounding the lower electrode. The system includes a first radio frequency (RF) generator electrically coupled to the lower electrode and a second radio frequency (RF) generator electrically coupled to the edge ring. The system also includes a direct current (DC) bias generator for electrically supplying an additive DC bias to the edge ring. The system includes a controller interfaced with the first and second RF generators and the DC bias generator. The first RF generator is configured to produce a wafer voltage (V w) waveform at the lower electrode. The produced Vw waveform includes an induced direct current (DC) component and a first RF component produced by the first RF generator. The controller is configured to produce an edge ring voltage (VER) waveform for application to the edge ring.
    Type: Application
    Filed: October 20, 2022
    Publication date: December 19, 2024
    Inventors: Rajesh Dorai, John Holland, Pratik Jacob Mankidy
  • Publication number: 20240395504
    Abstract: An impedance match is described. The impedance match includes a housing having a bottom portion and a top portion. The bottom portion has match components and the top portion has an elongated body. A low frequency input is connected through the bottom portion of the housing, and the low frequency input is interconnected to a first set of capacitors and inductors. A high frequency input is connected through the bottom portion of the housing, and the high frequency input is interconnected to a second set of capacitors and inductors. An elongated strap extends between the bottom portion and the top portion of the housing. A lower portion of the elongated strap is coupled to the second set of capacitors and inductors and an upper portion of the elongated strap is connected to an RF rod at an end of the elongated body.
    Type: Application
    Filed: July 31, 2024
    Publication date: November 28, 2024
    Inventors: Felix Leib Kozakevich, Alexei Marakhtanov, Bing Ji, Ranadeep Bhowmick, John Holland
  • Patent number: 12139791
    Abstract: Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: November 12, 2024
    Assignee: Lam Research Corporation
    Inventors: Pratik Mankidy, John Holland, Anthony de la Llera, Rajesh Dorai
  • Publication number: 20240361980
    Abstract: A computing system can implement a computer-implemented method for providing selective control of an acoustic environment of a user. The computer-implemented method can include determining a selected audio source of a plurality of audio sources in an environment of a user based at least in part on a selection user input at a peripheral device, where the peripheral device is in communication with the computing system. The computer-implemented method can include receiving a configuration user input at the peripheral device, where the configuration user input is indicative of an intent to configure an audio characteristic associated with the selected audio source. The computer-implemented method can include, in response to receiving the configuration user input, configuring the audio characteristic associated with the selected audio source based at least in part on the configuration user input.
    Type: Application
    Filed: July 9, 2024
    Publication date: October 31, 2024
    Inventors: Robert Marchant, Amelia Schladow, David Matthew Jones, Philip Roadley-Battin, Henry John Holland
  • Patent number: 12131886
    Abstract: A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: October 29, 2024
    Assignee: Lam Research Corporation
    Inventors: Ranadeep Bhowmick, Alexei Marakhtanov, Felix Leib Kozakevich, John Holland
  • Publication number: 20240331296
    Abstract: The technology provides enhanced co-presence of interactive media participants without high quality video or other photo-realistic representations of the participants. A low-resolution graphical representation (318) of a participant provides real-time dynamic co-presence. Face detection captures a maximum amount of facial expression with minimum detail in order to construct the low-resolution graphical representation. A set of facial mesh data (304) is generated by the face detection to include a minimal amount of information about the participant's face per frame. The mesh data, such as facial key points, is provided to one or more user devices so that the graphical representation of the participant can be rendered in a shared app at the other device(s) (308, 804).
    Type: Application
    Filed: August 24, 2021
    Publication date: October 3, 2024
    Inventors: Robert Marchant, Tríona Éidín Butler, Henry John Holland, David Matthew Jones, Benjamin Guy Alexander Pawle, Michael Colville, George Joseph Rickerby
  • Patent number: 12080518
    Abstract: An impedance match is described. The impedance match includes a housing having a bottom portion and a top portion. The bottom portion has match components and the top portion has an elongated body. A low frequency input is connected through the bottom portion of the housing, and the low frequency input is interconnected to a first set of capacitors and inductors. A high frequency input is connected through the bottom portion of the housing, and the high frequency input is interconnected to a second set of capacitors and inductors. An elongated strap extends between the bottom portion and the top portion of the housing. A lower portion of the elongated strap is coupled to the second set of capacitors and inductors and an upper portion of the elongated strap is connected to an RF rod at an end of the elongated body.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: September 3, 2024
    Assignee: Lam Research Corporation
    Inventors: Felix Leib Kozakevich, Alexei Marakhtanov, Bing Ji, Ranadeep Bhowmick, John Holland