Abstract: Apparatus and method for obtaining stable matching networks for plasma tools for use in the plasma processing industry. In an RF plasma apparatus, running at a matched condition for a transmission line and the plasma tool matching network such that the input impedance at the input to the transmission line is different than that of the output impedance of an RF generator and such that when the plasma density in the plasma tool decreases the input impedance will match the output impedance of the generator.

Abstract: A method of manufacturing semiconductor chips uses negative plasma etching. The plasma may be produced by an inductive plasma source. A magnetic field is used to reduce diffusion of hot electrons, producing a uniform negative plasma to etch a work piece.

Abstract: Disclosed is a plasma dry processing apparatus for producing a plasma with a resonance zone including a chamber for plasma processing at least one workpiece, the workpiece situated at a first end of the chamber; an induction coil at a second end of the chamber, spaced from the workpiece, for providing a radio frequency induced electromagnetic magnetic field to generate a helicon plasma within the chamber; a plurality of magnetic dipoles contained within the material of the induction coil, the magnetic dipoles having their fields directed towards the interior of, and producing a well-confined plasma within, the chamber, wherein the fields are adjacent to the second end of the chamber and keep the plasma spaced from the second end of the chamber.

Abstract: Disclosed is an ion implantation source for producing a plasma with an electron cyclotron resonance zone including a chamber for plasma processing and having at least one extraction slit, said extraction slit situated at a first end of the chamber; at least one antenna encircling the chamber for prodding a radio frequency induced electromagnetic field to generate an inductive/helicon plasma within the chamber; a plurality of magnetic dipoles at the periphery of the chamber; and at least one magnetic dipole at a second end of the chamber; the magnetic dipoles at the periphery and second end of the chamber having their fields directed towards the interior of the chamber, wherein the fields are adjacent to the periphery and the second end of the chamber and keep the plasma spaced from the periphery and the second end of the chamber.

Abstract: An efficient RF coil for inductively coupled plasmas provides either capacitive or inductive coupling to the plasma. The coil has a layered structure including at least one RF coil, an insulator having a low dielectric constant and a second RF magnetic structure. The second RF magnetic structure may be either a second RF coil or a Faraday shield. In a two coil structure, the first RF coil has a first magnetic sense upon energization by an RF source, and the second RF coil has a second magnetic sense opposite the first magnetic sense. An RF source is connected to the high voltage ends of the two RF coil. Uniform capacitive coupling is achieved by the use of a Faraday shield located between the RF coil and the plasma.

Abstract: A novel method and apparatus for achieving electrostatic deflection of high current ion beams within a scanning apparatus. In one embodiment, a pair of gates are provided, with one gate being oriented proximate each side of the deflection plates, and each gate being biased to a negative voltage of a sufficient amplitude to repel electrons which otherwise would be attracted to the positively-biased deflection plates to thereby protect the electron cloud from degradation, and maintain space charge neutralization of the ion beam. In another embodiment, means are provided to drive the deflection plates at negative voltages at all times and to maintain portions of the ground tube of the apparatus adjacent the deflection plates at a ground or negative level in order to avoid degradation of the electron sheath.

Abstract: An electrostatic chuck has its electrodes biased with respect to the self-bias potential induced by the plasma on the wafer, thereby providing improved resistance to breakdown in spite of variation of the wafer potential during processing. An alternate embodiment further suppresses the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck by the interposition of a conductive guard ring at the self-bias potential, thereby defining an equipotential area between the closest electrode and the wafer.

Abstract: An electrostatic chuck is disclosed that is resistant to the formation of vacuum arcs between the back of the wafer being processed and the body of the chuck. A guard ring surrounds the chuck and floats close to the self-bias potential induced by the plasma on the wafer. The voltage between the wafer and the closest electrode is thereby capacitively divided by the guard ring.