Patents by Inventor John I. Kim
John I. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8551347Abstract: A method in one embodiment includes forming a layer of a nonmagnetic material above an upper surface of a substrate; forming a resist structure above the layer of nonmagnetic material, wherein the resist structure has an undercut; removing a portion of the layer of nonmagnetic material not covered by the resist structure; depositing a layer of magnetic material above the substrate adjacent a remaining portion of the layer of nonmagnetic material such that at least portions of the layer of magnetic material and the remaining portion of the layer of nonmagnetic material lie in a common plane; removing the resist structure; and forming a write pole above the layer of magnetic material and the remaining portion of the layer of nonmagnetic material. Additional methods are also presented.Type: GrantFiled: December 22, 2008Date of Patent: October 8, 2013Assignee: HGST Netherlands B.V.Inventors: Amanda Baer, Wen-Chien David Hsiao, John I. Kim, Vladimir Nikitin, Trevor W. Olson, John Bruce Piggott, Jr., Yuan Yao
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Patent number: 8066893Abstract: A method for manufacturing a magnetic write head having a stepped, recessed, high magnetic moment pole connected with a write pole. The stepped pole structure helps to channel magnetic flux to the write pole without leaking write field to the magnetic medium. This allows the write head to maintain a high write field strength at very small bit sizes. The method includes depositing a dielectric layer and a first CMP layer over substrate that can include a magnetic shaping layer. A mask is formed over the dielectric layer, the mask having an opening to define the stepped pole structure. The image of the mask is transferred into the dielectric layer. A high magnetic moment material is deposited and a chemical mechanical polishing is performed to planarize the magnetic material and dielectric layer.Type: GrantFiled: December 23, 2008Date of Patent: November 29, 2011Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Amanda Baer, Wen-Chien David Hsiao, John I. Kim, Yinshi Liu, Vladimir Nikitin, Trevor W. Olson, Hicham Moulay Sougrati, Yuan Yao
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Patent number: 7952831Abstract: A perpendicular magnetic recording write head has a write pole, a trapezoidal-shaped trailing shield notch, and a gap between the write pole and notch, with the gap being formed of a nonmagnetic mask film, such as alumina, a nonmagnetic metal protective film and a nonmagnetic gap layer. The write pole has a trailing edge that has a width substantially defining the track width and that faces the front edge of the notch but is spaced from it by the gap. The write pole has nonmagnetic filler material, such as alumina, surrounding it except at its trailing edge, where it is in contact with the gap. A reactive ion beam etching (RIBE) process removes the filler material at the side edges of the write pole and thus widens the opening at the side edges. The nonmagnetic metal film protects the underlying mask film and write pole during the widening of the opening.Type: GrantFiled: August 3, 2010Date of Patent: May 31, 2011Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: John I. Kim, Aron Pentek
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Publication number: 20100296193Abstract: A perpendicular magnetic recording write head has a write pole, a trapezoidal-shaped trailing shield notch, and a gap between the write pole and notch, with the gap being formed of a nonmagnetic mask film, such as alumina, a nonmagnetic metal protective film and a nonmagnetic gap layer. The write pole has a trailing edge that has a width substantially defining the track width and that faces the front edge of the notch but is spaced from it by the gap. The write pole has nonmagnetic filler material, such as alumina, surrounding it except at its trailing edge, where it is in contact with the gap. A reactive ion beam etching (RIBE) process removes the filler material at the side edges of the write pole and thus widens the opening at the side edges. The nonmagnetic metal film protects the underlying mask film and write pole during the widening of the opening.Type: ApplicationFiled: August 3, 2010Publication date: November 25, 2010Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.Inventors: John I. Kim, Aron Pentek
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Patent number: 7788797Abstract: A method for making a perpendicular magnetic recording write head that has a write pole, a trapezoidal-shaped trailing shield notch, and a gap between the write pole and notch uses a reactive ion beam etching (RIBE) process in CHF3 that removes filler material at the side edges of the write pole and thus widens the opening at the side edges. The gap is formed of a nonmagnetic mask film, such as alumina, a nonmagnetic metal protective film and a nonmagnetic gap layer. The nonmagnetic metal film is substantially less reactive to CHF3 than the filler material and protects the underlying mask film and write pole during the widening of the opening. The gap layer and trailing shield notch are deposited into a widened opening above the write pole, so the sides of the notch diverge to cause the generally trapezoidal shape.Type: GrantFiled: April 16, 2007Date of Patent: September 7, 2010Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: John I. Kim, Aron Pentek
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Publication number: 20100159154Abstract: A method in one embodiment includes forming a layer of a nonmagnetic material above an upper surface of a substrate; forming a resist structure above the layer of nonmagnetic material, wherein the resist structure has an undercut; removing a portion of the layer of nonmagnetic material not covered by the resist structure; depositing a layer of magnetic material above the substrate adjacent a remaining portion of the layer of nonmagnetic material such that at least portions of the layer of magnetic material and the remaining portion of the layer of nonmagnetic material lie in a common plane; removing the resist structure; and forming a write pole above the layer of magnetic material and the remaining portion of the layer of nonmagnetic material. Additional methods are also presented.Type: ApplicationFiled: December 22, 2008Publication date: June 24, 2010Inventors: Amanda Baer, Wen-Chien David Hsiao, John I. Kim, Vladimir Nikitin, Trevor W. Olson, John Bruce Piggott, JR., Yuan Yao
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Publication number: 20100155366Abstract: A method for manufacturing a magnetic write head having a stepped, recessed, high magnetic moment pole connected with a write pole. The stepped pole structure helps to channel magnetic flux to the write pole without leaking write field to the magnetic medium. This allows the write head to maintain a high write field strength at very small bit sizes. The method includes depositing a dielectric layer and a first CMP layer over substrate that can include a magnetic shaping layer. A mask is formed over the dielectric layer, the mask having an opening to define the stepped pole structure. The image of the mask is transferred into the dielectric layer. A high magnetic moment material is deposited and a chemical mechanical polishing is performed to planarize the magnetic material and dielectric layer.Type: ApplicationFiled: December 23, 2008Publication date: June 24, 2010Inventors: Amanda Baer, Wen-Chien David Hsiao, John I. Kim, Yinshi Liu, Vladimir Nikitin, Trevor W. Olson, Hicham Moulay Sougrati, Yuan Yao
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Patent number: 7340824Abstract: A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.Type: GrantFiled: June 30, 2004Date of Patent: March 11, 2008Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Michael Feldbaum, John I. Kim, Murali Ramasubramanian, Howard Gordon Zolla
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Publication number: 20070247746Abstract: A perpendicular magnetic recording write head has a write pole, a trapezoidal-shaped trailing shield notch, and a gap between the write pole and notch, with the gap being formed of a nonmagnetic mask film, such as alumina, a nonmagnetic metal protective film and a nonmagnetic gap layer. The write pole has a trailing edge that has a width substantially defining the track width and that faces the front edge of the notch but is spaced from it by the gap. The write pole has nonmagnetic filler material, such as alumina, surrounding it except at its trailing edge, where it is in contact with the gap. A reactive ion beam etching (RIBE) process removes the filler material at the side edges of the write pole and thus widens the opening at the side edges. The nonmagnetic metal film protects the underlying mask film and write pole during the widening of the opening.Type: ApplicationFiled: April 16, 2007Publication date: October 25, 2007Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.Inventors: John I. Kim, Aron Pentek
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Patent number: 7254884Abstract: Methods for fabricating pole piece tips for a magnetic transducer are disclosed. The ion-milling operations for trimming P2 and notching P1 are controlled using feed-forward and feedback. The preferred method of the invention includes steps for setting four time values used in different phases of the ion-milling process based on feed-forward and feedback of measured values including the P2 width measured in the mask, multiple P2B measurements and measurement of the notch depth.Type: GrantFiled: September 20, 2004Date of Patent: August 14, 2007Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Negar Karimi, John I. Kim, Andrew Crehan Walker, Yeak-Chong Wong
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Patent number: 7123443Abstract: The present invention includes an overplated component which includes an enlarged mushroom head having outer portions which overhang a hard baked resist layer. The device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. While not intended to be limiting in any manner, a device of the present invention is a thin film magnetic head wherein the yoke portion of a magnetic pole is formed utilizing the mushroom plating techniques of the present invention. Another mushroom plated component found in many devices is a mushroom plated electrical interconnecting stud that is formed utilizing the process steps of the present invention.Type: GrantFiled: July 9, 2003Date of Patent: October 17, 2006Assignee: International Business Machines CorporationInventors: Thomas Edward Dinan, Richard Hsiao, John I. Kim, Ashok Lahiri, Clinton David Snyder
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Patent number: 6723252Abstract: The present invention includes a two-step etching process for notching the P1 pole of the write head element of a magnetic head. In a first step, the preferred embodiment utilizes a combination of C2F6 and argon gases (designated as C2F6/Ar) as the etchant gas to preferentially etch portions of the alumna write gap layer. Thereafter, in the second step, argon is used as the etchant gas to preferentially etch the P1 pole material. The C2F6/Ar etchant gas preferably includes C2F6 gas in a concentration range of from 50% to 90%, with a preferred concentration range being from 70% to 80%. The etching of the alumna write gap layer is preferably conducted with a first echant ion beam angle of from 5° to 30°, and a second etchant ion beam angle of from 65° to 85°.Type: GrantFiled: June 16, 2000Date of Patent: April 20, 2004Assignee: International Business Machines CorporationInventors: Richard Hsiao, John I. Kim
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Publication number: 20040070873Abstract: A first embodiment of the mushroom plating process of the present invention starts with an overplated component which includes an enlarged mushroom head having outer portions which overhang a resist layer. The next step in the first process embodiment is a heating step in which the resist layer is hard baked. Thereafter, using a dry etch process, such as a reactive ion etch (RIE) process, the hard baked resist layer is removed in all areas except beneath the overhang of the mushroom head. The area beneath the overhang thereby remains filled with hard baked resist. Thereafter, the device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. In an alternative process embodiment of the present invention the dry etch process is conducted first upon the resist layer, such that the resist layer is removed in all areas except under the overhang.Type: ApplicationFiled: July 9, 2003Publication date: April 15, 2004Inventors: Thomas Edward Dinan, Richard Hsiao, John I. Kim, Ashok Lahiri, Clinton David Snyder
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Patent number: 6631546Abstract: A method of manufacturing includes 2 mushroom plating process starts with an overplated component which includes an enlarged mushroom head having outer portions which overhang a resist layer. The next step in the first process embodiment is a heating step in which the resist layer is hard baked. Thereafter, using a dry etch process, such as a reactive ion etch (RIE) process, the hard baked resist layer is removed in all areas except beneath the overhang of the mushroom head. The area beneath the overhang thereby remains filled with hard baked resist. Thereafter, the device is ultimately encapsulated such that no voids and/or redeposition problems exist under the overhang due to the presence of the hard baked resist. In an alternative process embodiment of the present invention the dry etch process is conducted first upon the resist layer, such that the resist layer is removed in all areas except under the overhang. Thereafter, the device is baked, such that hard baked resist remains beneath the overhang.Type: GrantFiled: February 1, 2000Date of Patent: October 14, 2003Assignee: International Business Machines CorporationInventors: Thomas Edward Dinan, Richard Hsiao, John I. Kim, Ashok Lahiri, Clinton David Snyder
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Patent number: 6539610Abstract: A high throughput method for producing the narrow track width inductive head is also provided, whereby the heads may be manufactured in substantial volumes. The new head may be merged or piggy-backed MR or GMR heads, comprising a first pole piece, P1, and a second pole piece, P2, and is distinctly characterized by write track width is significantly reduced by a preliminary ion milling process before P1 notching is performed. The preliminary step utilizes an ion milling process to trim the write track width, P2B, at an angle between 45 to 85 degrees from the wafer normal. The MR head may then undergo conventional P1 notching.Type: GrantFiled: July 14, 2000Date of Patent: April 1, 2003Assignee: International Business Machines CorporationInventors: Jyh-Shuey (Jerry) Lo, John I. Kim, Timothy J. Moran
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Patent number: 5277749Abstract: A layer of photoresist provides a stress relief (or cushion) layer between a lift-off polymer layer and a barrier of multi-level lift-off structures. When multiple evaporation steps are required using the same lift-off pattern, the adhesion between organosilicon and organic film is stressed by a first blanked metal film. To prevent delamination between the lift-off polymer layer and RIE barrier photoresist is applied on top of the lift-off polymer and sandwiched between the organosilicon and organic materials. This photoresist acts as a cushion and as an adhesion promoter to reduce delamination after the metal deposition(s).Type: GrantFiled: October 17, 1991Date of Patent: January 11, 1994Assignee: International Business Machines CorporationInventors: Jonathan H. Griffith, John I. Kim, Thomas L. Leong, William J. Tilly, Sari Wacks