Patents by Inventor John Ian Doohan

John Ian Doohan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a metal interconnect that substantially reduces the formation of intermetallic residue regions
    Patent number: 6559047
    Abstract: The formation of intermetallic residue regions during the formation of a semiconductor metal layer, which has a base metal layer and a cap metal layer formed on the base metal layer, is substantially reduced by forming a layer of oxide on the base metal layer before the cap metal layer is deposited.
    Type: Grant
    Filed: January 24, 2002
    Date of Patent: May 6, 2003
    Assignee: National Semiconductor Corporation
    Inventor: John Ian Doohan