Abstract: Methods and devices for provisioning a hyper-converged infrastructure of bare metal systems are disclosed herein. Two fabric elements are configured in a master-slave arrangement to ensure high availability. ONIE capable fabric elements may be pre-installed with an operating system as firmware to run open network operating systems, such as Linux. The Linux operating system includes a KVM hypervisor to run virtual machines. An operating system of the virtual machines can access an external network by creating a bridge between switch management ports and a virtual network interface. New node elements may be added by connecting the network ports of the new node element to the fabric elements and booting the new node element in a network/PXE boot mode. The new node element obtains an IP address from a DHCP server and boots an image downloaded from a PXE server.

Abstract: Methods and devices for provisioning a hyper-converged infrastructure of bare metal systems are disclosed herein. Two fabric elements are configured in a master-slave arrangement to ensure high availability. ONIE capable fabric elements may be pre-installed with an operating system as firmware to run open network operating systems, such as Linux. The Linux operating system includes a KVM hypervisor to run virtual machines. An operating system of the virtual machines can access an external network by creating a bridge between switch management ports and a virtual network interface. New node elements may be added by connecting the network ports of the new node element to the fabric elements and booting the new node element in a network/PXE boot mode. The new node element obtains an IP address from a DHCP server and boots an image downloaded from a PXE server.

Abstract: A method and system for virtualization switch failover is disclosed. According one embodiment of the present invention, a failure of a first virtualization device within storage a area network interconnect and associated with a unique interconnect device identifier is detected and the unique interconnect device identifier is responsively associated with a second virtualization device of the storage area network interconnect.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: Disclosed is a method of fabricating a microelectronic package, especially a microelectronic package having copper circuitization on a dielectric substrate. The method includes the steps of depositing a chromium adhesion layer on the dielectric substrate, depositing a copper seed layer on the chromium adhesion layer, depositing photoresist on the copper seed layer, imaging and developing the photoresist, and forming a pattern of copper circuitization on the selected portions of the send copper layer. The chromium adhesion layer material is removed from the dielectric substrate by contacting the chromium adhesion layer with aqueous sulfuric acid electrolyte, while maintaining the chromium adhesion layer electrolytically in series with a counterelectrode, and maintaining the chromium adhesion layer anodic with respect to the counterelectrode. The chromium adhesion layer material is oxidized to soluble Cr.sup.+3, while substantially avoiding formation of Cr.sup.+6.

Abstract: A device for applying fluid (e.g., etchant) to a substrate (e.g., thin metallic tape) wherein the device includes a head member having means therein for directing a first fluid (e.g., etchant) at an established first pressure against the substrate and means for directing a second fluid (e.g., air) at an established second pressure equal to or greater than the first pressure (at the location of fluid intersection) and against the substrate in the area proximate the first fluid so as to substantially contain and limit the first fluid to impingement substantially only at the location against which the first fluid is designed to strike. Preferably, two opposing head members are utilized, and these may serve to maintain the substrate therebetween in a suspended state. Both head members are movable relative to each other during fluid application. As stated, the device is particularly suited to function as an etcher, but may also serve other purposes (e.g., coating, cleaning, rinsing, etc.).

Abstract: A polyimide pattern is formed on a substrate by providing a layer of photosensitive polyimide precursor containing the polyimide precursor and a compound having a photosensitive group on the substrate and prebaking the layer. The layer is then exposed imagewise to actinic radiation through a photomask to form an exposed image pattern of the polyimide precursor in the layer. The unexposed areas of the layer are removed using a liquid developer and the exposed image pattern is cured by heating. In one aspect of the present invention, the prebaking step employs a judicious selection of times and temperature to eliminate the problem of formation of a white residue that occurs from using prior art prebake procedures. In another aspect of the present invention, a particular liquid developer composition is employed to facilitate the formation of sloped vias in the polyimide. In another aspect of the present invention, a particular range of exposure wavelength(s) is employed to obtain smooth walled vias.

Abstract: A fully cured or substantially fully cured polyimide is etched by contacting the imide with an aqueous solution of a metal hydroxide such as an alkali metal or alkali earth hydroxide and a metallic compound selected from metal carbonates, sulfates and phosphates. The presence of the carbonate, sulfate or phosphare reduces the undercutting of a resist pattern on the polyimide.

Abstract: Polyimide is etched by contacting the polyimide with an aqueous solution of a metal hydroxide followed by contact with an acid followed by contact with an aqueous solution of a metal hydroxide. Etching of chemically cured polyimide can be enhanced by employing a presoaking in hot water. Also, partially etched chemically cured polyimide is removed with a concentrated acid solution.In preparing a metal coated polyimide structure for subsequent gold plating, two flash etching steps with the polyimide etch between are employed after developing the photoresist.