Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.

Abstract: Methods for producing porous tricalcium phosphate net-shaped material are provide. The methods involve preparing a reactant mixture comprising calcium oxide and phosphorus pentoxide in a mole percent ratio that allows the mixture to form tricalcium phosphate upon combustion thereof, forming this mixture into a desired final shape in a die with compression, and carrying out a combustion synthesis therewith. Net-shaped TCP materials of the combustion synthesis, comprising alpha tricalcium phosphate or mixtures of alpha and beta tricalcium phosphate, are optionally further treated to effect transition of the alpha phase to the beta phase. The net-shaped TCP materials can have a uniform or non-uniform porosity.

Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.

Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.

Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.

Abstract: An improved mouth guard designed for use with protective equipment such as helmets and other head gear is disclosed. The invention provides a convenient means to temporarily affix the mouth guard to sports equipment, or other object when the mouth guard is removed, rather than using a conventional or traditional tethering strap. The disclosed mouth guard can be quickly removed from a user's mouth and quickly attached to a helmet component, player's finger, or other piece of equipment to allow the mouth guard to remain rigidly affixed to the player without a loose tethering strap such as used in conventional mouth guards. The invention also is applicable to other mouth guard devices which may be used for dental treatment applications to secure a dental appliance temporarily when removed from the user's mouth.

Abstract: In accordance with one embodiment of the present invention, an electrochemical conversion assembly comprises a plurality of electrochemical conversion cells and a plurality of electrically conductive bipolar plates. The electrochemical conversion cells are configured to communicate with first and second reactant supplies. Adjacent ones of the electrochemical conversion cells are separated by respective ones of the plurality of bipolar plates. The bipolar plates comprise an alloy comprising Fe and Cr. Respective surface portions of the bipolar plates are provided with electrically conductive, corrosion resistant layers that are placed in contact with portions of the electrochemical conversion cells. The corrosion resistant electrically conductive layers may comprise graphitic layers characterized predominantly by sp2 hybridized carbon-carbon bonding, molybdenum doped indium oxide layers, an electrically conductive Cr+N layer, or an electrically conductive MoSi2 layer.

Abstract: Nitrided bipolar plates and a scheme for their fabrication are provided. The present invention also contemplates device incorporating bipolar plates according to the present invention. For example, in accordance with one embodiment of the present invention, an electrochemical conversion assembly is provided. The electrochemical conversion cells of the assembly are separated by respective bipolar plates comprising an alloy of Fe and Cr. A surface portion of the bipolar plates comprises a single phase nitrided structure. According to another embodiment of the present invention, a plasma nitriding process is utilized to create a single phase nitrided structure along a surface portion of respective ones of said bipolar plates.

Abstract: A method of preparing a high purity metal nitride and/or oxide powder is provided, comprising: heating a metal salt and an organic fuel to an ignition temperature in a nitrogen-rich atmosphere, forming a first composition; and optionally heating the first composition to a heat treatment temperature, which heat treatment temperature is above the ignition temperature and below 1000° C., in a nitrogen-rich atmosphere until the metal nitride and/or oxide powder is formed.

Abstract: A method for making high purity, multiphasic calcium phosphate powders using an Auto-Ignition Combustion Synthesis (AICS) reaction of a calcium salt, a phosphate salt and a fuel is provided. In the method provided, energy released from the AICS reaction between the calcium salt, phosphate salt and fuel ignites at temperatures much lower than the actual phase transformation temperatures and reaches a high temperature rapidly enough for synthesis of the desired product to occur, without the requirement for coprecipitation, an external heat source for calcination and/or additional steps for removing undesired precursors from the desired final product.

Abstract: The present invention provides coating systems that minimize thermal and residual stresses to create a fatigue- and soldering-resistant coating for aluminum die casting dies. The coating systems include at least three layers. The outer layer is an alumina- or boro-carbide-based outer layer that has superior non-wettability characteristics with molten aluminum coupled with oxidation and wear resistance. A functionally-graded intermediate layer or “interlayer” enhances the erosive wear, toughness, and corrosion resistance of the die. A thin adhesion layer of reactive metal is used between the die substrate and the interlayer to increase adhesion of the coating system to the die surface.

Abstract: Methods for producing porous tricalcium phosphate net-shaped material are provide. The methods involve preparing a reactant mixture comprising calcium oxide and phosphorus pentoxide in a mole percent ratio that allows the mixture to form tricalcium phosphate upon combustion thereof, forming this mixture into a desired final shape in a die with compression, and carrying out a combustion synthesis therewith. Net-shaped TCP materials of the combustion synthesis, comprising alpha tricalcium phosphate or mixtures of alpha and beta tricalcium phosphate, are optionally further treated to effect transition of the alpha phase to the beta phase. The net-shaped TCP materials can have a uniform or non-uniform porosity.

Abstract: The present invention is directed to the preparation of in-situ formation of a series of glass-ceramic composites by the Self-propagating High temperature Synthesis (SHS) technique with advantages of processing simplicity as well as the potential of cost savings. The materials produced by the technique contain crystalline TiB2 phase and have either a pure glassy matrix or a glass matrix with partial devitrification based on the Al2O3—CaO system. The materials can potentially be used for infrared light transmission and for other high temperature applications. These materials can also be produced with relatively high porosity.

Abstract: The present invention is directed to the preparation of in-situ formation of a series of glass-ceramic composites by the Self-propagating High temperature Synthesis (SHS) technique with advantages of processing simplicity as well as the potential of cost savings. The materials produced by the technique contain crystalline TiB2 phase and have either a pure glassy matrix or a glass matrix with partial devitrification based on the Al2O3—CaO system. The materials can potentially be used for infrared light transmission and for other high temperature applications. These materials can also be produced with relatively high porosity.

Abstract: In-situ formation of a series of glass-ceramic composites by the Self-propagating High temperature Synthesis (SHS) technique. Advantages include processing simplicity and cost savings. The materials processed by the technique either have a pure glassy matrix (Al2O3—B2O3—MgO) or a glass matrix with partial devitrification, and crystalline TiB2 particles having a size of about 0.5 &mgr;m. The material can be prepared either in inert atmosphere inside a reaction chamber or in air without a chamber. The materials exhibit relatively high porosity and good strength and can be used as filters, thermal insulation materials or in other similar applications.

Abstract: A coating system (10) formed on a molybdenum substrate (12) includes an oxidation resistance layer (14), a CTE matching layer (16) disposed between the oxidation resistance layer (14) and the substrate (12), and a novel barrier layer (18) disposed between the CTE matching layer (16) and the substrate (12). The CTE matching layer reduces stresses due to differential expansion/contraction as between the substrate (12) and the oxidation resistance layer (14), especially for high temperature applications. The barrier layer (18), which remains amorphous at temperatures up to at least 1000° C., inhibits diffusion of carbon and silicon into substrate (12).

Abstract: In-situ formation of glass-ceramic composites by the Self-propagating High temperature Synthesis (SHS) technique. The reagents used are: TiO.sub.2, B.sub.2 O, Al, Ti, B and MO where MO represents BaO, MgO, CaO and other similar oxides. BaCO.sub.3 may be substituted for BaO. The composition of the reaction products can be adjusted by adjusting the ratios of the reagents. All reagents are in powder form and the reaction can be carried out either in inert atmosphere inside a reaction chamber or in air without a chamber. The materials produced have crystalline TiB.sub.2 particles in a glassy matrix (aluminoborate glass). The TiB.sub.2 particles have a size of about 0.5 .mu.m. Advantages include processing simplicity and cost savings. The glass-ceramic composites produced are electrically conductive and find application where high strength, hardness and electrical conductivity are required.

Abstract: In a packet switched multiplexed data/voice communication system, timed loopbacks along a subscriber line are effected by purposely extinguishing or killing the DATA carrier sewing the line.

Abstract: A rudderless motorboat propelled and steered by twin-turbine wheels also functioning as traction wheels to carry the boat over sandbars and other submerged bodies to prevent it from running aground. The stern section of the boat hull is provided with a pair of longitudinally-extending tunnels which are symmetrically disposed with respect to the keel. Each wheel is rotatably mounted within a respective tunnel on an axis of rotation which is above the bottom line of the hull whereby only the lower segment of the wheel projects below this line to effect propulsion. Disposed within each tunnel on either side of the wheel therein are inlet and outlet baffles which are contoured to admit water to the propelling segment of the wheel and to discharge water therefrom, the baffles otherwise conforming to the periphery of the wheel to prevent recirculation of the water.