Abstract: A Josephson junction (JJ) quantum bit (qubits) arranged on a substrate is provided. In one embodiment, each qubit comprises a dielectric layer, a superconductor base layer portion underlying the dielectric layer and a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction. The qubit further comprise a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits.

Abstract: Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits.

Abstract: A Josephson junction (JJ) quantum bit (qubits) arranged on a substrate is provided. In one embodiment, each qubit comprises a dielectric layer, a superconductor base layer portion underlying the dielectric layer and a first dielectric diffused region adjacent a dielectric layer/superconductor base layer portion junction. The qubit further comprise a superconductor mesa layer portion overlying the dielectric layer and having a second dielectric diffused region adjacent a dielectric layer/superconductor mesa layer portion junction, the first and second dielectric diffused regions mitigating further diffusion from other semiconductor processes on the plurality of qubits.

Abstract: A integrated circuit and methods for fabricating the circuit are provided. The circuit integrates at least one circuit element formed from a material that is superconducting at temperatures less than one hundred milliKelvin and at least one resistor connected to the circuit element. The resistor is formed from an alloy of transition metals that is resistive at temperatures less than one hundred milliKelvin.

Abstract: A integrated circuit and methods for fabricating the circuit are provided. The circuit integrates at least one circuit element formed from a material that is superconducting at temperatures less than one hundred milliKelvin and at least one resistor connected to the circuit element. The resistor is formed from an alloy of transition metals that is resistive at temperatures less than one hundred milliKelvin.

Abstract: Methods are provided of forming a Josephson junction (JJ) quantum bit (qubit). In one embodiment, the method comprises forming a JJ trilayer on a substrate. The JJ trilayer is comprised of a dielectric layer sandwiched between a bottom superconductor material layer and a top superconductor material layer. The method further comprises performing a thermal hardening process on the JJ trilayer to control diffusion of the dielectric layer into the bottom superconductor material layer and the top superconductor material layer, and etching openings in the JJ trilayer to form one or more JJ qubits.

Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

Abstract: Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCu3Ti4O12 or La3Ga5SiO4. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

Abstract: A supported superconductor is made where a top layer of alkaline earth metal-copper oxide based material (10) is applied to a buffer layer (14) of La.sub.2-x Sr.sub.x CuO.sub.4, where x is a value from 0 to 0.4, all of which is supported by a bottom layer (12) of .alpha.-Al.sub.2 O.sub.3.

Abstract: This is a method for making an ohmic connection between a semiconductor and oxide superconductor, the connection being such that current can pass between the semiconductor and the superconductor without going through a degraded portion which is greater than the coherence length of the superconductor. The method can comprise depositing a buffer layer (which is essentially inert to the oxide superconductor) on a first portion of a semiconductor substrate, and depositing oxide superconductor on the barrier layer, and depositing a superconductor contact layer (e.g. of gold or silver) on the oxide superconductor, and depositing a semiconductor contact layer on a second portion of the semiconductor substrate (the semiconductor contact layer being, for example, of aluminum, or a refractory metal silicide); and depositing a layr (e.g.

Abstract: Disclosed is a superconducting Josephson junction which comprises a layer of niobium nitride on a substrate, an epitaxial layer of a pseudo-binary compound on the layer of niobium nitride, where the pseudo-binary compound has the composition about 3 atomic percent MgO--about 97 atomic percent CaO, to about 97 atomic percent MgO--about 3 atomic percent CaO, and an epitaxial layer of niobium nitride on the layer of pseudo-binary compound. Also disclosed is a method of making a Josephson junction by depositing a layer of niobium nitride onto a suitable substrate, depositing an expitaxial layer of a pseudo-binary compound onto the layer of niobium nitride, where the pseudo-binary compound has a composition of about 3 atomic percent MgO--about 97 atomic percent CaO, to about 97 atomic percent MgO--about 3 atomic percent CaO, and depositing an epitaxial layer of niobium nitride onto the layer said pseudo-binary compound.