Abstract: A system includes a first chiplet and a second chiplet connected via a plurality of interconnects. The system includes a pattern generator configured to generate a test pattern on behalf of the first chiplet. The system includes a pattern checker configured to check the test pattern on behalf of the second chiplet. The system includes a first repair multiplexer and a second repair multiplexer corresponding to the first chiplet and the second chiplet, respectively. The first repair multiplexer and the second repair multiplexer configured to selectively enable a repair path responsive to a short fault between two interconnects of the plurality interconnects based on the checked test pattern.

Abstract: Embodiments herein describe a circuit for detecting a single event upset (SEU). The circuit includes a latch including an output node, a first parity node, and a second parity node and correction circuitry configured to correct a single event upset (SEU) at the output node using the first and second parity nodes.

Abstract: Embodiments herein describe a circuit for detecting a single event upset (SEU). The circuit includes a latch including an output node, a first parity node, and a second parity node and correction circuitry configured to correct a single event upset (SEU) at the output node using the first and second parity nodes.

Abstract: An integrated circuit (IC) device includes an error correction code (ECC) encoder circuitry configured to receive input data, determine min-terms in a Hamming matrix (H-Matrix) corresponding to the input data, and generate ECC data based on the min-terms and an output codeword based on the ECC data, and an error correction circuitry configured to generate a corrected output codeword based on the output codeword.

Abstract: A technique reduces power consumption of a bit cell in a memory and provides write assistance to the bit cell. When the bit cell is active, a power-saving write-assist circuit coupled to the bit cell is selectively sized according to a type of memory access. When the bit cell is inactive, the virtual power supply node floats to a predetermined voltage between a first voltage on a first power supply node coupled to the bit cell and a second voltage on a second power supply node coupled to the bit cell. A method for controlling power consumption of a bit cell and assisting a write to the bit cell includes providing a reference voltage to a virtual power supply node coupled to the bit cell. The reference voltage is provided based on an operational state of the bit cell and a type of memory access to the bit cell.

Abstract: An integrated circuit (IC) device includes an error correction code (ECC) encoder circuitry configured to receive input data, determine min-terms in a Hamming matrix (H-Matrix) corresponding to the input data, and generate ECC data based on the min-terms and an output codeword based on the ECC data, and an error correction circuitry configured to generate a corrected output codeword based on the output codeword.

Abstract: An apparatus and method for providing efficient floor planning, power, and performance tradeoffs of memory accesses. A dual read port and single write port memory bit cell uses two asymmetrical read access circuits for conveying stored data on two read bit lines. The two read bit lines are pre-charged to different voltage reference levels. The layout of the memory bit cell places the two read bit lines on an opposed edge from the single write bit line. The layout uses a dummy gate placed over both p-type diffusion and n-type diffusion between the edges. The layout has a same number of p-type transistors as n-type transistors despite using asymmetrical read access circuits. The layout also has a contacted gate pitch that is one more than the number of p-type transistors.

Abstract: A memory device is disclosed herein that leverages high ratio column MUXES to improve SEU resistance. The memory device may be utilized in an integrated circuit die and chip packages having the same. In one example, as semiconductor memory device is provided that includes first and second arrays of semiconductor memory cells, a plurality of sense amplifiers configured to read data states from the first and second arrays of memory cells, and a first plurality of high ratio MUXES connecting the first and second arrays of memory cells to the plurality of sense amplifiers.

Abstract: An apparatus and method for providing efficient floor planning, power, and performance tradeoffs of memory accesses. Adjacent bit cells in a column of an array use a split read port such that the bit cells do not share a read bit line while sharing a write bit line. The adjacent bit cells include asymmetrical read access circuits that convey data stored by latch circuitry of a corresponding bit cell to a corresponding read bit line. The layout of adjacent bit cells provides a number of contacted gate pitches per bit cell that is less than a sum of the maximum number of metal gates in layout of each of the adjacent bit cells divided by the number of adjacent bit cells.

Abstract: A memory device is disclosed herein that leverages high ratio column MUXES to improve SEU resistance. The memory device may be utilized in an integrated circuit die and chip packages having the same. In one example, as semiconductor memory device is provided that includes first and second arrays of semiconductor memory cells, a plurality of sense amplifiers configured to read data states from the first and second arrays of memory cells, and a first plurality of high ratio MUXES connecting the first and second arrays of memory cells to the plurality of sense amplifiers.

Abstract: An apparatus and method for efficiently routing power signals across semiconductor dies. A semiconductor fabrication process (or process) places a first semiconductor die in an integrated circuit and stacks a second semiconductor die vertically adjacent to the first semiconductor die. The process forms multiple backside metal layers vertically adjacent to a backside of a silicon substrate of the second semiconductor die. The process forms a first backside metal layer that includes at least a first power route that forms a rectangle within the first backside metal layer. The process forms a second backside metal layer that includes at least a second power rail that forms an L-shape within the second backside metal layer. The process connects one or more corners of the rectangle of the first power rail to a corresponding corner of a separate power rail of the second backside metal layer that forms an L-shape.

Abstract: Systems, apparatuses, and methods for routing traffic through vertically stacked semiconductor dies are disclosed. A first semiconductor die has a second die stacked vertically on top of it in a three-dimensional integrated circuit. The first die includes a through silicon via (TSV) interconnect that does not traverse the first die. The first die includes one or more metal layers above the TSV, which connect to a bonding pad interface through a bonding pad via. If the signals transferred through the TSV of the first die are shared by the second die, then the second die includes a TSV aligned with the bonding pad interface of the first die. If these signals are not shared by the second die, then the second die includes an insulated portion of a wafer backside aligned with the bonding pad interface.

Abstract: Systems, apparatuses, and methods for routing traffic through vertically stacked semiconductor dies are disclosed. A first semiconductor die has a second die stacked vertically on top of it in a three-dimensional integrated circuit. The first die includes a through silicon via (TSV) interconnect that does not traverse the first die. The first die includes one or more metal layers above the TSV, which connect to a bonding pad interface through a bonding pad via. If the signals transferred through the TSV of the first die are shared by the second die, then the second die includes a TSV aligned with the bonding pad interface of the first die. If these signals are not shared by the second die, then the second die includes an insulated portion of a wafer backside aligned with the bonding pad interface.

Abstract: A bit cell of an SRAM implemented using standard cell design rules includes a write portion and a read portion. The write portion includes a pass gate coupled to an input node of the bit cell and supplies data on the input node to a first node of the bit cell while write word line signals are asserted. An inverter is coupled to the first node and supplies inverted data. A keeper circuit that is coupled to the inverter maintains the data on the first node when the write word line signals are deasserted. The read portion of the bit cell receives read word line signals and the inverted data and is responsive to assertion of the read word line signals to supply an output node of the read portion of the bit cell with output data that corresponds to the data on the first node.

Abstract: A layout for a 6T SRAM cell array is disclosed. The layout doubles the number of bits per bit cell in the array by implementing dual pairs of bitlines spanning bit cell columns in the array. Alternating connections (e.g., alternating vias) may be provided for wordline access to the bitlines in the layout. Alternating the connections may reduce RC delay in the layout.

Abstract: A system and method for efficiently capturing data by sequential circuits across multiple operating conditions are described. In various implementations, an integrated circuit includes multiple signal arrival adjusters both at its I/O boundaries and across its die. The signal arrival adjuster includes two internal timing paths, each with a respective latency. The signal arrival adjuster receives an input signal, and generates an output signal from the a selected one of the first timing path and the second timing path. The signal arrival adjuster sends the output signal to a sequential circuit. The sequential circuit uses the output signal as one of an input data signal and an input clock signal. The selection between the two timing paths within the signal arrival adjuster aids satisfying the setup and hold time requirements of the sequential circuit.

Abstract: A technique reduces power consumption of a bit cell in a memory and provides write assistance to the bit cell. When the bit cell is active, a power-saving write-assist circuit coupled to the bit cell is selectively sized according to a type of memory access. When the bit cell is inactive, the virtual power supply node floats to a predetermined voltage between a first voltage on a first power supply node coupled to the bit cell and a second voltage on a second power supply node coupled to the bit cell. A method for controlling power consumption of a bit cell and assisting a write to the bit cell includes providing a reference voltage to a virtual power supply node coupled to the bit cell. The reference voltage is provided based on an operational state of the bit cell and a type of memory access to the bit cell.

Abstract: A write masked latch bit cell of an SRAM includes a write mask circuit that is responsive to assertion of a first write mask signal to cause a value of a write data node to be a first value and is responsive to assertion of a second write mask signal to cause the value of the write data node to have a second value. A pass gate supplies the data on the write data node to an internal node of the bit cell responsive to write word line signals being asserted. A keeper circuit maintains the value of the first node independently of values of the write word line signals while the first write mask signal and the second write mask signal are deasserted.

Abstract: An apparatus and method for providing efficient floor planning, power, and performance tradeoffs of memory accesses. A dual read port and single write port memory bit cell uses two asymmetrical read access circuits for conveying stored data on two read bit lines. The two read bit lines are pre-charged to different voltage reference levels. The layout of the memory bit cell places the two read bit lines on an opposed edge from the single write bit line. The layout uses a dummy gate placed over both p-type diffusion and n-type diffusion between the edges. The layout has a same number of p-type transistors as n-type transistors despite using asymmetrical read access circuits. The layout also has a contacted gate pitch that is one more than the number of p-type transistors.

Abstract: An apparatus and method for providing efficient floor planning, power, and performance tradeoffs of memory accesses. Adjacent bit cells in a column of an array use a split read port such that the bit cells do not share a read bit line while sharing a write bit line. The adjacent bit cells include asymmetrical read access circuits that convey data stored by latch circuitry of a corresponding bit cell to a corresponding read bit line. The layout of adjacent bit cells provides a number of contacted gate pitches per bit cell that is less than a sum of the maximum number of metal gates in layout of each of the adjacent bit cells divided by the number of adjacent bit cells.