Patents by Inventor John J. Yurkas
John J. Yurkas has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180342688Abstract: Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.Type: ApplicationFiled: May 23, 2017Publication date: November 29, 2018Inventors: Damon B. Farmer, Shu-Jen Han, Jianshi Tang, John J. Yurkas
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Publication number: 20180342689Abstract: Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.Type: ApplicationFiled: November 15, 2017Publication date: November 29, 2018Inventors: Damon B. Farmer, Shu-Jen Han, Jianshi Tang, John J. Yurkas
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Patent number: 10141529Abstract: Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.Type: GrantFiled: November 15, 2017Date of Patent: November 27, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Damon B. Farmer, Shu-Jen Han, Jianshi Tang, John J. Yurkas
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Patent number: 10141528Abstract: Embodiments of the invention are directed to methods and resulting structures for enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors (CNT FETs) with scaled contacts using a wetting layer. In some embodiments of the invention, a nanotube is formed over a surface of a substrate. An insulating layer is formed over the nanotube such that end portions of the nanotube are exposed. A low work function metal is formed over the end portions of the nanotube and a wetting layer is formed between the low work function metal and the nanotube.Type: GrantFiled: May 23, 2017Date of Patent: November 27, 2018Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Damon B. Farmer, Shu-Jen Han, Jianshi Tang, John J. Yurkas
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Patent number: 8258495Abstract: A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.Type: GrantFiled: July 1, 2010Date of Patent: September 4, 2012Assignee: International Business Machines CorporationInventors: Jennifer L. Gardner, Fenton R. McFeely, John J. Yurkas
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Patent number: 8242030Abstract: A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.Type: GrantFiled: September 25, 2009Date of Patent: August 14, 2012Assignee: International Business Machines CorporationInventors: James B. Hannon, Fenton R. McFeely, Satoshi Oida, John J. Yurkas
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Publication number: 20110073834Abstract: A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer.Type: ApplicationFiled: September 25, 2009Publication date: March 31, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: James B. Hannon, Fenton R. McFeely, Satoshi Oida, John J. Yurkas
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Patent number: 7863083Abstract: A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.Type: GrantFiled: August 25, 2008Date of Patent: January 4, 2011Assignee: International Business Machines CorporationInventors: Ricky Amos, Douglas A. Buchanan, Cyril Cabral, Jr., Alessandro C. Callegari, Supratik Guha, Hyungjun Kim, Fenton R. McFeely, Vijay Narayanan, Kenneth P. Rodbell, John J. Yurkas
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Patent number: 7820474Abstract: A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.Type: GrantFiled: January 9, 2007Date of Patent: October 26, 2010Assignee: International Business Machines CorporationInventors: Supratik Guha, Fenton R. Mc Feely, John J. Yurkas
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Publication number: 20100264398Abstract: A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.Type: ApplicationFiled: July 1, 2010Publication date: October 21, 2010Applicant: International Business Machines CorporationInventors: Jennifer L. Gardner, Fenton R. Mc Feely, John J. Yurkas
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Patent number: 7772120Abstract: A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.Type: GrantFiled: January 9, 2007Date of Patent: August 10, 2010Assignee: International Business Machines CorporationInventors: Jennifer L. Gardner, Fenton R. Mc Feely, John J. Yurkas
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Patent number: 7749802Abstract: A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.Type: GrantFiled: January 9, 2007Date of Patent: July 6, 2010Assignee: International Business Machines CorporationInventors: Fenton R. McFeely, Alejandro G. Schrott, John J. Yurkas
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Publication number: 20100009164Abstract: A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.Type: ApplicationFiled: August 13, 2009Publication date: January 14, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Fenton R. McFeely, Alejandro G. Schrott, John J. Yurkas
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Publication number: 20090294876Abstract: A method of forming an electropositive metal-containing capping layer atop a stack of a high k gate dielectric/interfacial layer that avoids chemically and physically altering the high k gate dielectric and the interfacial layer is provided. The method includes chemical vapor deposition of an electropositive metal-containing precursor at a temperature that is about 400° C. or less. The present invention also provides semiconductor structures such as, for example, MOSCAPs and MOSFETs, that include a chemical vapor deposited electropositive metal-containing capping layer atop a stack of a high k gate dielectric and an interfacial layer. The presence of the CVD electropositive metal-containing capping layer does not physically or chemically alter the high k gate dielectric and the interfacial layer.Type: ApplicationFiled: August 14, 2009Publication date: December 3, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Supratik Guha, Fenton R. McFeely, Vijay Narayanan, Vamsi K. Paruchuri, John J. Yurkas
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Publication number: 20090008725Abstract: A method of forming an electropositive metal-containing capping layer atop a stack of a high k gate dielectric/interfacial layer that avoids chemically and physically altering the high k gate dielectric and the interfacial layer is provided. The method includes chemical vapor deposition of an electropositive metal-containing precursor at a temperature that is about 400° C. or less. The present invention also provides semiconductor structures such as, for example, MOSCAPs and MOSFETs, that include a chemical vapor deposited electropositive metal-containing capping layer atop a stack of a high k gate dielectric and an interfacial layer. The presence of the CVD electropositive metal-containing capping layer does not physically or chemically alter the high k gate dielectric and the interfacial layer.Type: ApplicationFiled: July 3, 2007Publication date: January 8, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Supratik Guha, Fenton R. McFeely, Vijay Narayanan, Vamsi K. Paruchuri, John J. Yurkas
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Publication number: 20080311745Abstract: A method for fabricating a CMOS gate electrode by using Re, Rh, Pt, Ir or Ru metal and a CMOS structure that contains such gate electrodes are described. The work functions of these metals make them compatible with current pFET requirements. For instance, the metal can withstand the high hydrogen pressures necessary to produce properly passivated interfaces without undergoing chemical changes. The thermal stability of the metal on dielectric layers such as SiO2, Al2O3 and other suitable dielectric materials makes it compatible with post-processing temperatures up to 1000° C. A low temperature/low pressure CVD technique with Re2(CO)10 as the source material is used when Re is to be deposited.Type: ApplicationFiled: August 25, 2008Publication date: December 18, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ricky Amos, Douglas A. Buchanan, Cyril Cabral, JR., Alessandro C. Callegari, Supratik Guha, Hyungjun Kim, Fenton R. McFeely, Vijay Narayanan, Kenneth P. Rodbell, John J. Yurkas
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Patent number: 7439180Abstract: A dispenser system for use in atomic beam assisted metal organic chemical vapor deposition is provided as well as a method of depositing an ultra-thin film using the same. The inventive dispenser system includes an atomic source having an unimpeded line of site to a substrate and an annular metal organic chemical vapor deposition showerhead having a plurality of nozzles for delivering a precursor to the substrate. In accordance with the present invention, each of the nozzles present on the showerhead is angled to provide precursor beam trajectories that crossover and are non-intercepting.Type: GrantFiled: July 28, 2006Date of Patent: October 21, 2008Assignee: International Business Machines CorporationInventors: Supratik Guha, Fenton R. McFeely, John J. Yurkas
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Publication number: 20080164579Abstract: A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge) and antimony (Sb) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In addition to the above, the inventive method is a non-selective CVD process, which means that the GeSb materials are deposited equally well on insulating and non-insulating materials.Type: ApplicationFiled: January 9, 2007Publication date: July 10, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Fenton R. McFeely, Alejandro G. Schrott, John J. Yurkas
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Publication number: 20080164580Abstract: A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for the control of nitrogen-doped GeSb stoichiometry over a wide range of values and the inventive method is performed at a substrate temperature of less than 400° C., which makes the inventive method compatible with existing interconnect processes and materials. In some embodiments, the inventive method is a non-selective CVD process, which means that the nitrogen-doped GeSb materials are deposited equally well on insulating and non-insulating materials. In other embodiments, a selective CVD process is provided in which the nitrogen-doped GeSb materials are deposited only on regions of a substrate in a metal which is capable of forming an eutectic alloy with germanium.Type: ApplicationFiled: January 9, 2007Publication date: July 10, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Jennifer L. Gardner, Fenton R. Mc Feely, John J. Yurkas
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Publication number: 20080166586Abstract: A chemical vapor deposition (CVD) method for selectively depositing GeSb materials onto a surface of a substrate is provided in which a metal that is capable of forming an eutectic alloy with germanium is used to catalyze the growth of the GeSb materials. A structure is also provided that includes a GeSb material located on preselected regions of a substrate. In accordance with the present invention, the GeSb material is sandwiched between a lower metal layer used to catalyze the growth of the GeSb and an upper surface metal layer that forms during the growth of the GeSb material.Type: ApplicationFiled: January 9, 2007Publication date: July 10, 2008Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Supratik Guha, Fenton R. McFeely, John J. Yurkas