Patents by Inventor John J. Zhu
John J. Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9818817Abstract: A method of fabricating a metal-insulator-metal (MIM) capacitor reduces the number of masks and processing steps compared to conventional techniques. A conductive redistribution layer (RDL) is patterned on a semiconductor chip. A MIM dielectric layer is deposited over the RDL. A first conductive layer of a MIM capacitor is deposited over the MIM dielectric layer. The MIM dielectric layer is patterned using a MIM conductive layer mask. The conductive redistribution layer includes two RDL nodes that extend under the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.Type: GrantFiled: February 12, 2013Date of Patent: November 14, 2017Assignee: QUALCOMM IncorporatedInventors: John J. Zhu, P R Chidambaram, Giridhar Nallapati, Choh fei Yeap
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Publication number: 20160126137Abstract: Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.Type: ApplicationFiled: January 11, 2016Publication date: May 5, 2016Inventors: John J. ZHU, Zhongze WANG, Da YANG
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Patent number: 9287347Abstract: A metal-insulator-metal (MIM) capacitor reduces a number of masks and processing steps compared to conventional techniques. A first conductive layer of a MIM capacitor is deposited on a semiconductor chip and patterned using a MIM conductive layer mask. A conductive redistribution layer (RDL) is patterned over the MIM dielectric layer. The conductive redistribution layer includes two RDL nodes that overlap the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.Type: GrantFiled: February 12, 2013Date of Patent: March 15, 2016Assignee: QUALCOMM INCORPORATEDInventors: John J. Zhu, P R Chidambaram, Giridhar Nallapati, Choh fei Yeap
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Patent number: 9269492Abstract: An orthogonal finger capacitor includes a layer having an anode bone frame adjacent a cathode bone frame, the anode bone frame having a first portion extending along an axis and a second portion extending perpendicular to the axis. A set of anode fingers extends from the first portion. A set of cathode fingers extends from the cathode bone frame, interdigitated with the set of anode fingers. An overlaying layer has another anode bone frame having a first portion parallel to the axis and a perpendicular second portion. A via couples the overlaying anode bone frame to the underlying anode bone frame. The via is located where the first portion of the overlaying anode bone frame overlaps the second portion of the underlying anode bone frame or, optionally, where the second portion of the overlying anode bone frame overlaps the first portion of the underlying anode bone frame.Type: GrantFiled: March 13, 2013Date of Patent: February 23, 2016Assignee: QUALCOMM IncorporatedInventors: John J. Zhu, Pr Chidambaram, Lixin Ge, Bin Yang, Jihong Choi
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Patent number: 9263279Abstract: Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.Type: GrantFiled: April 17, 2013Date of Patent: February 16, 2016Assignee: QUALCOMM INCORPORATEDInventors: John J. Zhu, Zhongze Wang, Da Yang
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Patent number: 9252104Abstract: A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes a lower interconnect layer of the interconnect stack. The CBC structure also includes a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes a metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure also includes a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having a portion of the first upper interconnect layer, and a second capacitor plate having a portion of the MIM capacitor layer(s).Type: GrantFiled: October 10, 2014Date of Patent: February 2, 2016Assignee: QUALCOMM INCORPORATEDInventors: John J. Zhu, Bin Yang, Pr Chidambaram, Lixin Ge, Jihong Choi
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Patent number: 8980708Abstract: A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes at least one metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure may also include a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having at least a portion of the first upper interconnect layer, and a second capacitor plate having at least a portion of the MIM capacitor layer(s).Type: GrantFiled: February 19, 2013Date of Patent: March 17, 2015Assignee: QUALCOMM IncorporatedInventors: John J. Zhu, Bin Yang, P R Chidambaram, Lixin Ge, Jihong Choi
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Patent number: 8975724Abstract: An electrically programmable gate oxide anti-fuse device includes an anti-fuse aperture having anti-fuse links that include metallic and/or semiconductor electrodes with a dielectric layer in between. The dielectric layer may be an interlayer dielectric (ILD), an intermetal dielectric (IMD) or an etch stop layer. The anti-fuse device may includes a semiconductor substrate having a conductive gate (e.g., a high K metal gate) disposed on a surface of the substrate, and a dielectric layer disposed on the conductive gate. A stacked contact can be disposed on the dielectric layer and a gate contact is disposed on an exposed portion of the gate.Type: GrantFiled: September 13, 2012Date of Patent: March 10, 2015Assignee: QUALCOMM IncorporatedInventors: Yong Park, Zhongze Wang, John J. Zhu, Choh fei Yeap
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Publication number: 20150028452Abstract: A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes a lower interconnect layer of the interconnect stack. The CBC structure also includes a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes a metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure also includes a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having a portion of the first upper interconnect layer, and a second capacitor plate having a portion of the MIM capacitor layer(s).Type: ApplicationFiled: October 10, 2014Publication date: January 29, 2015Inventors: John J. ZHU, Bin YANG, PR CHIDAMBARAM, Lixin GE, Jihong CHOI
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Publication number: 20140312500Abstract: Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.Type: ApplicationFiled: April 17, 2013Publication date: October 23, 2014Applicant: Qualcomm IncorporatedInventors: John J. Zhu, Zhongze Wang, Yang Da
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Publication number: 20140264629Abstract: A local interconnect structure is provided that includes a gate-directed local interconnect coupled to an adjacent gate layer through a diffusion-directed local interconnect.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Applicant: QUALCOMM IncorporatedInventors: John J. Zhu, Giridhar Nallapati, Chidi Chidambaram
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Publication number: 20140231957Abstract: A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes at least one lower interconnect layer of the interconnect stack. The CBC structure may also include a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes at least one metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure may also include a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having at least a portion of the first upper interconnect layer, and a second capacitor plate having at least a portion of the MIM capacitor layer(s).Type: ApplicationFiled: February 19, 2013Publication date: August 21, 2014Applicant: QUALCOMM INCORPORATEDInventors: John J. Zhu, Bin Yang, PR Chidambaram, Lixin Ge, Jihong Choi
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Publication number: 20140225223Abstract: A method of fabricating a metal-insulator-metal (MIM) capacitor reduces the number of masks and processing steps compared to conventional techniques. A conductive redistribution layer (RDL) is patterned on a semiconductor chip. A MIM dielectric layer is deposited over the RDL. A first conductive layer of a MIM capacitor is deposited over the MIM dielectric layer. The MIM dielectric layer is patterned using a MIM conductive layer mask. The conductive redistribution layer includes two RDL nodes that extend under the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.Type: ApplicationFiled: February 12, 2013Publication date: August 14, 2014Applicant: QUALCOMM INCORPORATEDInventors: John J. Zhu, PR Chidambaram, Giridhar Nallapati, Choh fei Yeap
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Publication number: 20140225224Abstract: A metal-insulator-metal (MIM) capacitor reduces a number of masks and processing steps compared to conventional techniques. A first conductive layer of a MIM capacitor is deposited on a semiconductor chip and patterned using a MIM conductive layer mask. A conductive redistribution layer (RDL) is patterned over the MIM dielectric layer. The conductive redistribution layer includes two RDL nodes that overlap the first conductive layer of the MIM capacitor. A conductive via or bump extends through the MIM dielectric layer and couples one of the RDL nodes to the first conductive layer of the MIM capacitor.Type: ApplicationFiled: February 12, 2013Publication date: August 14, 2014Applicant: QUALCOMM INCORPORATEDInventors: John J. Zhu, PR Chidambaram, Giridhar Nallapati, Choh fei Yeap
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Publication number: 20140203404Abstract: Spiral metal-on-metal (MoM or SMoM) capacitors and related systems and methods of forming MoM capacitors are disclosed. In one embodiment, a MoM capacitor disposed in a semiconductor die is disclosed. The MoM capacitor comprises a first electrode coupled to a first trace. The first trace is coiled in a first inwardly spiraling pattern and comprised of first parallel trace segments. The MoM capacitor also comprises a second electrode coupled to a second trace. The second trace is coiled in the first inwardly spiraling pattern and comprised of second parallel trace segments interdisposed between the first parallel trace segments. Reduced variations in the capacitance allow circuit designers to build circuits with tighter tolerances and generally improve circuit reliability.Type: ApplicationFiled: January 21, 2013Publication date: July 24, 2014Applicant: QUALCOMM INCORPORATEDInventors: Jihong Choi, John J. Zhu, PR Chidambaram, Bin Yang, Lixin Ge
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Publication number: 20140197519Abstract: In a particular embodiment, a method of forming a metal-insulator-metal (MIM) capacitor includes removing, using a lithographic mask, a first portion of an optical planarization layer to expose a region in which the MIM capacitor is to be formed. A second portion of an insulating layer is formed on a first conductive layer that is formed on a plurality of trench surfaces within the region. The method further includes removing at least a third portion of the insulating layer according to a lift-off technique.Type: ApplicationFiled: January 17, 2013Publication date: July 17, 2014Applicant: QUALCOMM INCORPORATEDInventors: Jihong Choi, John J. Zhu, PR Chidambaram, Bin Yang, Lixin Ge
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Publication number: 20140197520Abstract: In a particular embodiment, a method includes removing a first portion of an optical planarization layer using a lithographic mask to expose a region of the optical planarization layer. A resistive layer is formed at least partially within the region. The method further includes removing at least a second portion of the optical planarization layer and at least a third portion of the resistive layer to form a resistor.Type: ApplicationFiled: January 17, 2013Publication date: July 17, 2014Applicant: QUALCOMM INCORPORATEDInventors: Jihong Choi, John J. Zhu, Bin Yang, Giridhar Nallapati, PR Chidambaram
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Publication number: 20140092523Abstract: An orthogonal finger capacitor includes a layer having an anode bone frame adjacent a cathode bone frame, the anode bone frame having a first portion extending along an axis and a second portion extending perpendicular to the axis. A set of anode fingers extends from the first portion. A set of cathode fingers extends from the cathode bone frame, interdigitated with the set of anode fingers. An overlaying layer has another anode bone frame having a first portion parallel to the axis and a perpendicular second portion. A via couples the overlaying anode bone frame to the underlying anode bone frame. The via is located where the first portion of the overlaying anode bone frame overlaps the second portion of the underlying anode bone frame or, optionally, where the second portion of the overlying anode bone frame overlaps the first portion of the underlying anode bone frame.Type: ApplicationFiled: March 13, 2013Publication date: April 3, 2014Applicant: QUALCOMM IncorporatedInventors: John J. Zhu, PR Chidambaram, Lixin Ge, Bin Yang, Jihong Choi
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Publication number: 20140070364Abstract: An electrically programmable gate oxide anti-fuse device includes an anti-fuse aperture having anti-fuse links that include metallic and/or semiconductor electrodes with a dielectric layer in between. The dielectric layer may be an interlayer dielectric (ILD), an intermetal dielectric (IMD) or an etch stop layer. The anti-fuse device may includes a semiconductor substrate having a conductive gate (e.g., a high K metal gate) disposed on a surface of the substrate, and a dielectric layer disposed on the conductive gate. A stacked contact can be disposed on the dielectric layer and a gate contact is disposed on an exposed portion of the gate.Type: ApplicationFiled: September 13, 2012Publication date: March 13, 2014Applicant: QUALCOMM IncorporatedInventors: Yong Park, Zhongze Wang, John J. Zhu, Choh Fei Yeap
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Publication number: 20140001568Abstract: One feature pertains to an integrated circuit, comprising an access transistor and an antifuse. The access transistor includes at least one source/drain region, and the antifuse has a conductor-insulator-conductor structure. The antifuse includes a first conductor that acts as a first electrode, and also includes an antifuse dielectric, and a second conductor. A first surface of the first electrode is coupled to a first surface of the antifuse dielectric, a second surface of the antifuse dielectric is coupled to a first surface of the second conductor. The second conductor is electrically coupled to the access transistor's source/drain region. The antifuse is adapted to transition from an open circuit state to a closed circuit state if a programming voltage Vpp greater than or equal to an antifuse dielectric breakdown voltage is applied between the first electrode and the second conductor.Type: ApplicationFiled: November 21, 2012Publication date: January 2, 2014Applicant: QUALCOMM INCORPORATEDInventors: Zhongze Wang, John J. Zhu, Xia Li