Abstract: A resistive element in an electrochemical artificial neural network, includes a transition metal oxide thin film forming a working electrode, a pair of first electrodes connected to the working electrode, and a reference electrode for electrochemical doping of the working electrode. The biasing of the pair of first electrodes with respect to the reference electrode according to a determination of conductivity between the pair of first electrodes controls the resistance of the working electrode.

Abstract: A resistive element in an electrochemical artificial neural network, includes a transition metal oxide thin film forming a working electrode, a pair of first electrodes connected to the working electrode, and a reference electrode for electrochemical doping of the working electrode. The biasing of the pair of first electrodes with respect to the reference electrode according to a determination of conductivity between the pair of first electrodes controls the resistance of the working electrode.

Abstract: Techniques for nitridation of copper (Cu) wires. In one aspect, a method for nitridation of a Cu wire is provided. The method includes the following step. The Cu wire and trimethylsilylazide (TMSAZ) in a carrier gas are contacted at a temperature, pressure and for a length of time sufficient to form a nitridized layer on one or more surfaces of the Cu wire. The Cu wire can be part of a wiring structure and can be embedded in a dielectric media. The dielectric media can comprise an ultra low-k dielectric media.

Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.

Abstract: A deposition member adapted for discharging a deposition material during a deposition process can acquire a coating during the deposition. Such an initial emissivity value is selected for the deposition member, before any of the coating became deposited, that the emissivity of the deposition member remains substantially unchanged during the deposition process. In a representative embodiment the deposition member is coated with an appropriate thin layer for achieving the selected emissivity value.

Abstract: A process of passivating a metal-gated CMOS structure in which a metal-gated CMOS structure is passivated in an atmosphere of molecular hydrogen at a temperature of between about 250° C. and about 500° C. and a pressure of at least about 200 Torr. The present process provides a lower interface state density than obtainable by prior art passivation processes.

Abstract: A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The novel photo detector comprises a silicon or other semiconductor substrate material characterized by an electron energy bandgap, and a pair of metal electrodes disposed upon a surface of the silicon to define therebetween a border area of the surface. One of the two electrodes being exposed to the incident radiation and covering an area of said surface which is larger than the aforesaid border area, the aforesaid metal of the electrodes being characterized by a Fermi level which is within said electron energy bandgap.

Abstract: The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.

Abstract: A process of passivating a metal-gated CMOS structure in which a metal-gated CMOS structure is passivated in an atmosphere of molecular hydrogen at a temperature of between about 250° C. and about 500° C. and a pressure of at least about 200 Torr. The present process provides a lower interface state density than obtainable by prior art passivation processes.

Abstract: A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs in the semiconductor on which the metal electrodes are deposited. The novel photo detector comprises a silicon or other semiconductor substrate material characterized by an electron energy bandgap, and a pair of metal electrodes disposed upon a surface of the silicon to define therebetween a border area of the surface. One of the two electrodes being exposed to the incident radiation and covering an area of said surface which is larger than the aforesaid border area, the aforesaid metal of the electrodes being characterized by a Fermi level which is within said electron energy bandgap.

Abstract: The present invention is directed to an alpha-W layer which is employed in interconnect structures such as trench capacitors or damascene wiring levels as a diffusion barrier layer. The alpha-W layer is a single phased material that is formed by a low temperature/pressure chemical vapor deposition process using tungsten hexacarbonyl, W(CO)6, as the source material.

Abstract: The present invention relates to a method and apparatus for ensuring uniform and reproducible heating of a deformation-tolerant substrate during low-pressure chemical vapor deposition (CVD) of a metal film on a surface of the substrate. The uniform and reproducible heating of the substrate is achieved in the present invention by positioning the substrate on a beveled surface of a chamfered ring which is located above the heating element in a CVD reactor chamber. The space between heating element, chamfered ring and bottom surface of the substrate define a cavity between the substrate and heating element that ensures that the substrate is heated by radiative means rather than direct contact.

Abstract: An apparatus and method for forming high-purity, high-conductivity metal films deposited by chemical vapor deposition (CVD) on a surface of a substrate is provided. The apparatus includes a cooling system which is in thermal contact with a precursor dispenser such that cooling is sufficiently controlled to prevent unwanted chemical impurities, i.e., non-metallic precursor byproducts, from being introduced into the deposited metal film. The apparatus and method can be used with a wide variety of metallic precursors and under most CVD reaction conditions.

Abstract: A method is disclosed for forming an epitaxial layer of a semiconductor material over a metal structure disposed upon a surface of a semiconductor substrate, the metal being characterized by a negative Gibbs free energy for the formation of a compound of the metal and the semiconductor material. The method comprises the steps of: a) placing the substrate in a reactor vessel having a base pressure in the ultra high vacuum range, b) bringing the substrate to an elevated temperature, and c) flowing, over said substrate, a halogen-free precursor gas of molecules comprising the semiconductor material. Typically, the metal structure characterized by feature dimensions of less than 2.0 microns. Preferably, the metal is tungsten, the semiconductor material is silicon and the gas comprises a silane of the form SinH(2n+2), where n is a positive integer.

Abstract: A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.

Abstract: A method of increasing conductivity of a refractory metal film disposed upon a substrate includes exposing the refractory metal film to an atmosphere comprising a silane of the form Si.sub.n H.sub.(2n+2), where n is a positive integer, while subjecting the refractory metal film to a temperature in excess of 700 degrees Celsius and to a base pressure not exceeding 10.sup.-8 torr for a time period which is chosen to be sufficiently long to increase the conductivity of the refractory metal film to a correspondingly sufficient degree.

Abstract: A method of fabricating a mid-gap workfunction tungsten gate or W electrode directly onto a gate dielectric material for use in high speed/high density advanced MOS and CMOS devices is provided which utilizes low temperature/low pressure CVD of a tungsten carbonyl. MOS and CMOS devices containing one or more of the CVD W gates or W electrodes manufactured by the present invention are also provided herein.