Abstract: A package comprising a substrate, a first integrated device coupled to a first surface of the substrate, and a second integrated device coupled to a second surface of the substrate. The substrate includes a dielectric layer and a plurality of interconnects. The plurality of interconnects includes a first plurality of interconnects configured as a first inductor and a second plurality of interconnects configured as a second inductor. The first integrated device is configured to be coupled to the first inductor. The second integrated device is configured to be coupled to the second inductor. The second integrated device is configured to tune the first inductor through the second inductor.

Abstract: A package that includes a substrate having a first surface; a solder resist layer coupled to the first surface of the substrate; a device located over the solder resist layer such that a portion of the device touches the solder resist layer; and an encapsulation layer located over the solder resist layer such that the encapsulation layer encapsulates the device. The solder resist layer is configured as a seating plane for the device. The device is located over the solder resist layer such that a surface of the device facing the substrate is approximately parallel to the first surface of the substrate. The solder resist layer includes at least one notch. The device is located over the solder resist layer such that at least one corner of the device touches the at least one notch.

Abstract: A package that includes a substrate having a first surface; a solder resist layer coupled to the first surface of the substrate; a device located over the solder resist layer such that a portion of the device touches the solder resist layer; and an encapsulation layer located over the solder resist layer such that the encapsulation layer encapsulates the device. The solder resist layer is configured as a seating plane for the device. The device is located over the solder resist layer such that a surface of the device facing the substrate is approximately parallel to the first surface of the substrate. The solder resist layer includes at least one notch. The device is located over the solder resist layer such that at least one corner of the device touches the at least one notch.

Abstract: Some features pertain to a package substrate that includes at least one dielectric layer, an inductor in the at least one dielectric layer, a first terminal coupled to the inductor, a second terminal coupled to the inductor, and a third terminal coupled to the inductor. The first terminal is configured to be a first port for the inductor. The second terminal is configured to be a second port for the inductor. The third terminal is a dummy terminal. In some implementations, the package substrate includes a solder resist layer over the dielectric layer, where the solder resist layer covers the third terminal. In some implementations, the package substrate includes a solder interconnect over the third terminal, such that the solder resist layer is between the third terminal and the solder interconnect. In some implementations, the package substrate is coupled to a die comprising a plurality of switches.

Abstract: Low inductance to ground can be provided in wire-bond based device packages. An example device package may include a die on a package substrate, a mold on the package substrate and encapsulating the die, an upper ground conductor on the mold, and ground wire bonds within the mold. The die may include a plurality of terminals on an upper surface of the die. The plurality of ground wire bonds may electrically couple the die and the upper ground conductor. For each ground wire bond, a first end of that ground wire bond may be configured to electrically couple to a corresponding terminal on the upper surface of the die and a second end of that ground wire bond may be configured to electrically couple to the upper ground conductor at the upper surface of the mold.

Abstract: A flip-chip employing an integrated cavity filter is disclosed comprising an integrated circuit (IC) chip comprising a semiconductor die and a plurality of conductive bumps. The plurality of conductive bumps is interconnected to at least one metal layer of the semiconductor die to provide a conductive “fence” that defines an interior resonator cavity for providing an integrated cavity filter in the flip-chip. The interior resonator cavity is configured to receive an input RF signal from an input transmission line through an input signal transmission aperture provided in an internal layer in the semiconductor die. The interior resonator cavity resonates the input RF signal to generate the output RF signal comprising a filtered RF signal of the input RF signal, and couples the output RF signal on an output signal transmission line in the flip-chip through an output transmission aperture provided in the aperture layer.

Abstract: Some features pertain to a package substrate that includes at least one dielectric layer, an inductor in the at least one dielectric layer, a first terminal coupled to the inductor, a second terminal coupled to the inductor, and a third terminal coupled to the inductor. The first terminal is configured to be a first port for the inductor. The second terminal is configured to be a second port for the inductor. The third terminal is a dummy terminal. In some implementations, the package substrate includes a solder resist layer over the dielectric layer, where the solder resist layer covers the third terminal. In some implementations, the package substrate includes a solder interconnect over the third terminal, such that the solder resist layer is between the third terminal and the solder interconnect. In some implementations, the package substrate is coupled to a die comprising a plurality of switches.

Abstract: A flip-chip employing an integrated cavity filter is disclosed comprising an integrated circuit (IC) chip comprising a semiconductor die and a plurality of conductive bumps. The plurality of conductive bumps is interconnected to at least one metal layer of the semiconductor die to provide a conductive “fence” that defines an interior resonator cavity for providing an integrated cavity filter in the flip-chip. The interior resonator cavity is configured to receive an input RF signal from an input transmission line through an input signal transmission aperture provided in an internal layer in the semiconductor die. The interior resonator cavity resonates the input RF signal to generate the output RF signal comprising a filtered RF signal of the input RF signal, and couples the output RF signal on an output signal transmission line in the flip-chip through an output transmission aperture provided in the aperture layer.

Abstract: A flip-chip employing an integrated cavity filter is disclosed comprising an integrated circuit (IC) chip comprising a semiconductor die and a plurality of conductive bumps. The plurality of conductive bumps is interconnected to at least one metal layer of the semiconductor die to provide a conductive “fence” that defines an interior resonator cavity for providing an integrated cavity filter in the flip-chip. The interior resonator cavity is configured to receive an input RF signal from an input transmission line through an input signal transmission aperture provided in an internal layer in the semiconductor die. The interior resonator cavity resonates the input RF signal to generate the output RF signal comprising a filtered RF signal of the input RF signal, and couples the output RF signal on an output signal transmission line in the flip-chip through an output transmission aperture provided in the aperture layer.