Patents by Inventor John Joseph NEUMANN, JR.

John Joseph NEUMANN, JR. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for dry gas phase chemically etching a structure
    Patent number: 10079150
    Abstract: According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of: positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; etching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant; and exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.
    Type: Grant
    Filed: July 23, 2015
    Date of Patent: September 18, 2018
    Assignee: SPTS Technologies Limited
    Inventors: John Joseph Neumann, Jr., Kyle Stanton Lebouitz
  • METHOD AND APPARATUS FOR DRY GAS PHASE CHEMICALLY ETCHING A STRUCTURE
    Publication number: 20170025282
    Abstract: According to the invention there is provided a method of dry gas phase chemically etching a structure comprising the steps of: positioning the structure in an etch chamber, the structure comprising a first material and a second material, wherein the first material is selected from silicon, molybdenum, germanium, SiGe and tungsten, the second material is silicon dioxide or silicon nitride, and at least one surface of the first material is exposed so as to be contactable by a gas phase chemical etchant; etching the first material with a noble gas fluoride or halogen fluoride gas phase chemical etchant; and exposing the etch chamber to water vapour so that the step of etching the first material is performed in the presence of water vapour.
    Type: Application
    Filed: July 23, 2015
    Publication date: January 26, 2017
    Inventors: John Joseph NEUMANN, JR., Kyle Stanton LEBOUITZ