Abstract: A method for the in situ measurement of atomic hydrogen permeation into carbon steel from process streams under operating conditions of up to 3000 psi and temperatures up to 300° F. includes providing a probe assembly that includes a test specimen electrode and a negatively charged counter electrode in a fluid-tight reservoir containing an electrolyte, mounting the probe assembly directly in contact with a process stream and passing electrical conductors from the probe through a supporting, electrically non-conductive isolator positioned between a mounting assembly and the probe; maintaining a constant voltage across the electrodes and thereby directly measuring and recording permeation current flow between the probe electrodes.

Abstract: A method and corresponding apparatus useful for the in situ measurement of atomic hydrogen permeation into carbon steel from process streams including: (a) a positively-charged test specimen electrode consisting of a planar member of hydrogen damage-resistant steel alloy having an interior surface, the interior surface being provided with a coating of palladium, and an exterior surface that is placed in contact with the process stream; (b) a fluid-tight reservoir containing a basic liquid electrolyte solution in communication with the palladium coating of the test specimen electrode; (c) a negatively charged counter electrode positioned in the electrolyte reservoir proximate the test specimen electrode said reservoir, test specimen electrode and counter electrode constituting a probe assembly; (d) a mounting assembly for supporting and positioning said probe assembly in contact with a process stream and for receiving electrical conductors joined to said probe assembly; and (e) an electrically non-conduct

Abstract: A method for the in situ measurement of atomic hydrogen permeation into carbon steel from process streams under operating conditions of up to 3000 psi and temperatures up to 300° F. includes providing a probe assembly having a test specimen electrode and a negatively charged counter electrode in a fluid-tight reservoir containing an electrolyte, applying a constant voltage across the electrodes, and mounting the probe assembly directly in contact with the process stream inside of a pipeline and passing electrical conductors from the probe through a supporting electrically non-conductive isolator positioned between the mounting assembly and the probe in order to directly measure and record permeation current flow between the probe electrodes.

Abstract: A method and corresponding apparatus useful for the in situ measurement of atomic hydrogen permeation into carbon steel from process streams under operating conditions of up to 3000 psi and temperatures up to 300° F.

Abstract: A condensing heating module for heating a fluid and adapted for use with a radiant infrared burner. The heat exchanger within the module is spirally disposed about a central burner cavity and has a fluid flow passage of serpentine shape formed within its wall. The upper and lower surfaces of the module, together with the spiral wall of the heat exchanger, form a spiral condensing flue leading from the central burner cavity to an external flue. Those portions of the spiral heat exchanger wall and the module upper and lower surfaces which are exposed to direct radiation from the burner are formed of a corrosion resistant steel, while the remainder of the surfaces and wall are formed of carbon steel to which has been laminated a layer of polypropylene such that the polypropylene layer will be exposed to the flue gas and condensate environment and provide corrosion protection to the carbon steel.

Abstract: Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Isolation regions of the opposite conductivity type are formed by the temperature gradient zone melting process to separate the wafer into a plurality of device regions. Peripheral grooves are cut in one major surface in each device region. The grooves extend into the interior region thus electrically isolating the portion of the major surface within the grooves from the other major surface. The grooves are filled with a passivation material.

Abstract: Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Isolation regions of the opposite conductivity type are formed by the temperature gradient zone melting process to separate the wafer into a plurality of device regions. Peripheral grooves are cut in one major surface in each device region. The grooves extend into the interior region thus electrically isolating the portion of the major surface within the grooves from the other major surface. The grooves are filled with a passivation material.

Abstract: An apparatus for practicing temperature gradient zone melting includes a transparent tubular quartz glass work chamber for receiving a body of semiconductor material to be processed. An infrared radiation source is optically coupled to the interior of the chamber through a wall of the chamber for irradiating one surface of the semiconductor body. A metallic cooling block is placed in direct heat conductive engagement with the exterior of the tubular work chamber opposite to the infrared source to remove heat from the surface of the body opposite said one surface, thus making the temperature gradient set up in the body more uniform and unidirectional. The semiconductor body is supported in the chamber by support means making minimal thermal contact with the surface of the body opposite the said one surface. The chamber may be provided with closure means so that a closed atmosphere can be established therein.

Abstract: Disclosed is a method for selectively doping semiconductor materials utilizing temperature gradient zone melting. The required temperature gradient is provided by infrared radiation impinging on and heating one surface of a body of semiconductor material to be doped. The heat is conducted through the body creating a temperature gradient.