Abstract: Briefly, in accordance with one embodiment, an integrated circuit includes a circuit to produce discrete output signals that include a multilevel, data dependent voltage bias level, wherein the circuit further includes the capability to at least approximately cancel a zero introduced in the frequency response of the circuit due to capacitive coupling. Briefly, in accordance with another embodiment of the invention, an integrated circuit includes at least one comparator coupled to compare input and output voltage signal levels. The integrated circuit further includes circuitry to signal for an adjustment in the output voltage signal levels based, at least in part, on the comparator output signal.

Abstract: Briefly, in accordance with one embodiment, an integrated circuit includes a circuit to produce discrete output signals that include a multilevel, data dependent voltage bias level, wherein the circuit further includes the capability to at least approximately cancel a zero introduced in the frequency response of the circuit due to capacitive coupling. Briefly, in accordance with another embodiment of the invention, an integrated circuit includes at least one comparator coupled to compare input and output voltage signal levels. The integrated circuit further includes circuitry to signal for an adjustment in the output voltage signal levels based, at least in part, on the computer output signal.

Abstract: The present invention discloses a method and apparatus for testing a memory array. The memory array includes a plurality of memory blocks. A test data item is written to the memory blocks at a pre-determined location in parallel. The data from the memory blocks are read at the pre-determined location in parallel. These data items are compared to determine if they are identical. One of these data items is compared with the test data item.