Abstract: This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.

Abstract: This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.

Abstract: This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.

Abstract: This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.

Abstract: This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.

Abstract: This invention describes compounds of Structures 1, 2, and 3 and their use as allosteric modulators of the GABA receptor chloride ionophore complex to alleviate stress, anxiety, mood disorders, seizures, depression, treatment of drug and alcohol abuse, memory, premenstrual disorders, and neural system damage.

Abstract: A liquid storage apparatus provides a safe and easy to use device for efficiently managing liquid reagents used in a variety of laboratory equipment. The liquid storage apparatus helps reduce the likelihood of accidental sticks to laboratory personnel, allows for flexibility of experimental design, and helps maximize the use of chemical regents to prevent waste. The apparatus includes a plurality of containers of liquid with a pierceable septum interface at each end. The apparatus also includes a lower array of needles with each of the lower needles in the lower array of needles arranged to penetrate the bottom pierceable septum of a different one of the containers. Each of the needles includes a passage so the liquid can flow out of the pierced container. The apparatus further includes an upper array of needles with each of the upper needles in the upper array of needles arranged to penetrate the top pierceable septum of a different one of the containers.

Abstract: The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.

Abstract: The invention relates to methods, systems and devices for mitigation of bubbles in a micro-fluidic environment. For example, the invention relates to methods, systems and devices for mitigation of bubbles from reagents, solvents, formulations and for improving chemical reactions in micro-fluidic systems, such as for fluorescence detection and polynucleotide sequencing.

Abstract: A liquid storage apparatus provides a safe and easy to use device for efficiently managing liquid reagents used in a variety of laboratory equipment. The liquid storage apparatus helps reduce the likelihood of accidents, allows for flexibility of experimental design, and helps maximize the use of chemical regents to prevent waste. The apparatus includes a plurality of containers with a pierceable septum interface at each end. The apparatus also includes a lower array of needles with each of the lower needles in the lower array of needles arranged to penetrate the bottom pierceable septum of a different one of the containers. The apparatus further includes a piercing device arranged to penetrate the top pierceable septum of a different one of the containers. Each of the piercing devices include a passageway so gas can flow into the pierced container.

Abstract: The disclosure provides methods that improve fidelity of the sequencing-by-synthesis reactions, including methods that reduce impurities and contamination in various reagents, reaction mixtures, and other components of the sequencing systems.

Abstract: A liquid storage apparatus provides a safe and easy to use device for efficiently managing liquid reagents used in a variety of laboratory equipment. The liquid storage apparatus helps reduce the likelihood of accidental sticks to laboratory personnel, allows for flexibility of experimental design, and helps maximize the use of chemical regents to prevent waste. The apparatus includes a plurality of containers of liquid with a pierceable septum interface at each end. The apparatus also includes a lower array of needles with each of the lower needles in the lower array of needles arranged to penetrate the bottom pierceable septum of a different one of the containers. Each of the needles includes a passage so the liquid can flow out of the pierced container. The apparatus further includes an upper array of needles with each of the upper needles in the upper array of needles arranged to penetrate the top pierceable septum of a different one of the containers.

Abstract: The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.

Abstract: The present invention is directed to a method of forming semiconductor devices. In one illustrative embodiment, the method comprises defining a photoresist feature having a first size in a layer of photoresist that is formed above a layer of dielectric material. The method further comprises reducing the first size of the photoresist feature to produce a reduced size photoresist feature, forming an opening in the layer of dielectric material under the reduced size photoresist feature, and forming a conductive material in the opening in the layer of dielectric material.

Abstract: A static random access memory (SRAM) cell having increased cell capacitance at the storage nodes utilizes a capacitive structure. The capacitive structure includes a dielectric material between polysilicon conductive lines and tungsten local interconnects. The polysilicon plates are each connected to drains of lateral transistors associated with the SRAM cell. A dielectric material such as silicon dioxide may be deposited between the local interconnect and polysilicon conductive lines. The capacitor structures are provided between first and second N-channel pull down transistors associated with the SRAM cell.

Abstract: A memory device uses a reduced word line voltage during READ operations. The memory device includes a memory cell and a pass transistor for accessing the cell. The cell includes a storage node coupled to a pull-down transistor having substantially the same conductivity as the pass transistor. A drive circuit generates a reduced word line voltage to activate the pass transistor during a READ operation. The reduced word line voltage has a magnitude less than the magnitude of the bias voltage used to activate the pull-down transistor.