Patents by Inventor John Klem

John Klem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device with strained InGaAs layer
    Patent number: 4827320
    Abstract: A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.
    Type: Grant
    Filed: September 19, 1986
    Date of Patent: May 2, 1989
    Assignee: University of Illinois
    Inventors: Hadis Morkoc, John Klem, William T. Masselink, Timothy S. Henderson, Andrew A. Ketterson