Patents by Inventor John Kosakowski

John Kosakowski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5709949
    Abstract: A method of making a fuser member such as a fuser roller, pressure roller, or fuser belt, comprising of bonding an outermost fluoropolymer resin layer to an inner fluoroelastomer layer by means of a fluoropolymer-containing polyamide-imide primer layer.
    Type: Grant
    Filed: January 18, 1996
    Date of Patent: January 20, 1998
    Assignee: Eastman Kodak Company
    Inventors: Jiann-Hsing Chen, Lawrence Paul Demejo, Gary Frederick Roberts, Richard John Kosakowski, Muhammed Aslam, John Euguene Derimiggio
  • Patent number: 5654052
    Abstract: A fuser member having as its outermost layer, a composite material comprising:a) a crosslinked, oxide filled, poly(dimethylsiloxane) which containsb) a non-crosslinked, non-reactive poly(dimethylsiloxane) oil having a viscosity of at least 25,000 CPS.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 5, 1997
    Assignee: Eastman Kodak Company
    Inventors: Susan Ann Visser, Richard John Kosakowski, Jr., William Bernard Vreeland
  • Patent number: 5575888
    Abstract: Sidewalls in a pattern of a refractory metal on a substrate are passivated during plasma etching by introducing water vapor into the etching chamber. This process obtains nearly vertical sidewalls. In one exemplified embodiment, a pattern of tungsten on a chromium etch step layer was reactive ion etched. In that embodiment, the reactive ion etching was intermittently paused. After each pause, the workpiece was warmed from below about 20.degree. C. to about room temperature. Then, water vapor was introduced into the etching chamber housing the workpiece. After the water vapor was introduced, the workpiece was cooled to below about 20.degree. C. and reactive ion etching was resumed. Alternatively, water vapor can be introduced into the etching chamber continuously during plasma etching.
    Type: Grant
    Filed: April 14, 1995
    Date of Patent: November 19, 1996
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: John Kosakowski, William Chu, Kelly W. Foster, Christie R. K. Marrian, Martin C. Peckerar