Abstract: The invention provides advances in the arts with useful and novel methods for assembling multi-layer semiconductor structures having one or more internal conductive layers. The disclosed structures provide advantages in terms of resistance to Single Event Effects (SEE) particularly useful in electronics designed for radiation hardness. Disclosed methods include steps for providing two semiconductor layers, each having a conductive surface, and bonding them together with their conductive surfaces adjoining in order to form an internal conductive layer within a completed multi-layer structure. The conductive surfaces may include metals selected for their superior conductivity, refractory metals, selected primarily for their heat-resistance, or conductive dopants. In alternative embodiments, vertical interconnects are also included.