Patents by Inventor John L. Cain

John L. Cain has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6217902
    Abstract: Disclosed are suspensions suitable for encapsulation in gelatin capsules, comprising a solid phase consisting of solid particles having a mean diameter of at least about 149 &mgr;m, and a liquid phase capable of suspending the solid phase, the suspension having a predetermined rheology at a temperature suitable for encapsulation into gelatin capsules.
    Type: Grant
    Filed: September 15, 1997
    Date of Patent: April 17, 2001
    Assignee: R. P. Scheier Company
    Inventors: Keith E. Tanner, Gregory A. Schurig, Frank S. S. Morton, Brian R. Pansari, John L. Cain, Rickey S. Shelley, Youchino Wei
  • Patent number: 5624582
    Abstract: In a dry non-isotropic etching process, backside cooling by helium controls the rate and uniformity of etching in a thermal silicon layer, the taper of profiles etched into silicon dioxide layers, and the dimension and uniformity of etched structures in a polycide or polysilicon layer, on the surface of a silicon wafer. Helium pressures from greater than 2 torr to more than 10 torr are satisfactorily utilized to produce these effects.
    Type: Grant
    Filed: March 28, 1994
    Date of Patent: April 29, 1997
    Assignee: VLSI Technology, Inc.
    Inventor: John L. Cain
  • Patent number: 5610105
    Abstract: An improved anneal process is disclosed for use in the preparation of a dielectric layer, especially an intermetal dielectric layer. An oxide layer is deposited using a H.sub.2 O-TEOS PECVD process. A vacuum bake is used to minimize or eliminate volatile water, hydrogen, and hydrocarbon impurities in the dielectric layer. An oxidation anneal is then performed to scavenge any remaining undesirable species, and to provide for densification of the dielectric layer.
    Type: Grant
    Filed: June 10, 1994
    Date of Patent: March 11, 1997
    Assignee: VLSI Technology, Inc.
    Inventors: Landon B. Vines, Sigmund A. Koenigseder, John L. Cain, Chang-Ou Lee, Felix Fujishiro
  • Patent number: 5503881
    Abstract: An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate.
    Type: Grant
    Filed: May 12, 1995
    Date of Patent: April 2, 1996
    Assignee: VLSI Technology, Inc.
    Inventors: John L. Cain, Michael P. Relue, Michael E. Costabile, William P. Marsh
  • Patent number: 5439524
    Abstract: An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: August 8, 1995
    Assignee: VLSI Technology, Inc.
    Inventors: John L. Cain, Michael P. Relue, Michael E. Costabile, William P. Marsh
  • Patent number: 5434104
    Abstract: A method of metalization of semiconductor devices wherein predominantly aluminum metal films incorporate a minor amount of magnesium in admixture with the aluminum, or in layered juxtaposition with the aluminum layer, to provide resistance to corrosion, particularly acidic corrosion.
    Type: Grant
    Filed: March 2, 1994
    Date of Patent: July 18, 1995
    Assignee: VLSI Technology, Inc.
    Inventors: John L. Cain, Landon B. Vines, Sigmund Koenigseder, Chang-Ou Lee, Felix Fujishiro
  • Patent number: 5433823
    Abstract: This invention is directed to a plasma etching process for the etching of bi-layer passivation films comprising silicon nitride and silicon oxide wherein the etching gas is a selectivity enhancing ratio of gases selected from the group consisting of CHF.sub.3 /SF.sub.6, CHF.sub.3 /O.sub.2, and CHF.sub.3 /C.sub.2 F.sub.6.
    Type: Grant
    Filed: September 30, 1993
    Date of Patent: July 18, 1995
    Inventor: John L. Cain
  • Patent number: 5342476
    Abstract: Disclosed are methods for reducing the degree of underetching and particulate contamination occurring during dry non-isotropic etching of a polycide layer on the surface of a silicon wafer maintained in a wafer holder wherein the backside of the holder is cooled with a stream of helium gas. Specifically, in the disclosed methods, dry non-isotropic etching of the polycide layer is conducted either in the absence of backside cooling or the helium gas flow utilized in backside cooling is maintained at a pressure of no more than 3 torr.
    Type: Grant
    Filed: January 21, 1993
    Date of Patent: August 30, 1994
    Assignee: VLSI Technology, Inc.
    Inventor: John L. Cain
  • Patent number: 5336366
    Abstract: A dry etcher and method using two chambers can be used for anisotropic or isotropic etching. A pressure differential is created between the first and second chambers using a passage between the first and second chambers. Additionally, baffles which remove some of the ions created in the first chamber are used.
    Type: Grant
    Filed: April 5, 1993
    Date of Patent: August 9, 1994
    Assignee: VLSI Technology, Inc.
    Inventors: John L. Cain, Chang-Ou Lee
  • Patent number: 5242532
    Abstract: A dual mode plasma etching system and method for plasma etching endpoint detection etches a designated layer of a specified material on a substrate without exposing the substrate surface to a high-energy etching plasma. The substrate is prepared for etching by depositing a thin film of a second material distinct from the specified material on the substrate surface. The designated layer of specified material is formed on top of the thin film. Etching of the designated layer in a plasma etching chamber then proceeds while a preferably high level of power is applied to the plasma etching chamber. The dual mode etching system generates an endpoint signal resulting in termination of the high-power etch when the plasma etching chamber begins etching the thin film of second material. Portions of the thin film remaining on the substrate are then removed using a process less damaging to the substrate than etching at high power.
    Type: Grant
    Filed: March 20, 1992
    Date of Patent: September 7, 1993
    Assignee: VLSI Technology, Inc.
    Inventor: John L. Cain
  • Patent number: 4039222
    Abstract: This invention relates to a vehicle sun roof, preferably transparent or translucent such as glass or plastic, which contains the following characteristics:1. a frontal bar for aligning the sun roof cover which is an integral part of the cover frame;2. hingeable means for raising, sealing and locking the cover when in a closed position, and conversely hingeably lowering the cover during opening;3. means for moving the cover forward and rearward with a minimum of visibility by means of a separate rear crossmember; the crossmember having slidable control cams attached at each end to control the upward movement of the cover rear edge;4. a sun roof housing with a minimum loss of vehicle headroom;5. a safety switch for shutting off the motor which is activated when an increased torque is exerted on a rotatable motor housing due to resistance to motion of the cover.
    Type: Grant
    Filed: October 20, 1975
    Date of Patent: August 2, 1977
    Assignee: Sky-Top Sunroofs, Ltd.
    Inventors: Ernest Wolf, John L. Cain