Patents by Inventor John L. Edwards, Jr.

John L. Edwards, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of removing silicon oxide from a surface of a substrate
    Patent number: 6806202
    Abstract: A method for removing silicon oxide from a surface of a substrate is disclosed. The method includes depositing material onto the silicon oxide (110) and heating the substrate surface to a sufficient temperature to form volatile compounds including the silicon oxide and the deposited material (120). The method also includes heating the surface to a sufficient temperature to remove any remaining deposited material (130).
    Type: Grant
    Filed: December 3, 2002
    Date of Patent: October 19, 2004
    Assignee: Motorola, Inc.
    Inventors: Xiaoming Hu, James B. Craigo, Ravindranath Droopad, John L. Edwards, Jr., Yong Liang, Yi Wei, Zhiyi Yu
  • Method of removing an amorphous oxide from a monocrystalline surface
    Patent number: 6693033
    Abstract: A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.
    Type: Grant
    Filed: October 26, 2001
    Date of Patent: February 17, 2004
    Assignee: Motorola, Inc.
    Inventors: John L. Edwards, Jr., Yi Wei, Dirk C. Jordan, Xiaoming Hu, James Bradley Craigo, Ravindranath Droopad, Zhiyi Yu, Alexander A. Demkov
  • Method for forming a low-defect epitaxial layer in the fabrication of semiconductor devices
    Patent number: 6306675
    Abstract: In semiconductor devices such as laser diodes (LD) and light emitting diodes (LED) based on gallium nitride thin films, low defect density is desired in the gallium nitride film. In the fabrication of such devices on a silicon carbide substrate surface, the gallium nitride film is formed on the silicon carbide substrate after the substrate surface is etched using hydrogen at an elevated temperature. In another embodiment, an aluminum nitride film is formed as a buffer layer between the gallium nitride film and the silicon carbide substrate, and, prior to aluminum nitride formation, the substrate surface is etched using hydrogen at an elevated temperature.
    Type: Grant
    Filed: October 8, 1999
    Date of Patent: October 23, 2001
    Assignee: Arizona Board of Regents Acting on behalf of Arizona State University
    Inventors: Ignatius S. T. Tsong, David J. Smith, Victor M. Torres, John L. Edwards, Jr., R. Bruce Doak