Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

Abstract: A method of creating a patterned device by selecting a substrate; forming a first step on the substrate; depositing a sacrificial layer along the first step and the substrate; depositing a second step on a portion of the sacrificial layer; depositing a second layer on each of a portion of the substrate, sacrificial layer and second step that shares a common resistance to removal by a same agent as the substrate, the first step and the second step; removing a portion of the sacrificial layer so that a gap is created between the second layer and the first step, wherein a portion of the sacrificial layer remains such that the second layer remains; and processing the substrate beneath the gap created between the second layer and the first step.

Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.

Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.

Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.

Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shaped structure. A sacrificial spacer layer is deposited in the trench. The waveguide is created in the trench on the sacrificial spacer layer using a mask layer to angle the vertex of the L-shaped structure. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

Abstract: The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure and a sacrificial spacer layer is deposited in the trench. The waveguide is then created in the trench on the sacrificial spacer layer. User-defined portions of the sacrificial spacer layer are subsequently removed to create air gaps between the waveguide and the sidewalls of the trench in the optical semiconductor.

Abstract: A method of fabricating a device using a sacrificial layer by selecting a substrate; forming a first step on the substrate, where the first step is formed from a second material; depositing a sacrificial layer along the first step and the substrate; depositing a second step on a portion of the sacrificial layer; depositing a second layer on each of a portion of the substrate, sacrificial layer and second step that shares a common resistance to removal by a same agent as the substrate, the first step and the second step; removing the second step; removing a portion of the sacrificial layer such that a gap is created between the second layer and the first step, wherein at least a portion of the sacrificial layer remains such that the second layer adhered to the substrate remains; and processing the substrate beneath the gap.

Abstract: A method of creating a patterned device by selecting a substrate; depositing a mask layer on the substrate; forming a first step on the mask layer; depositing a sacrificial layer along the first step and the mask layer; depositing a blocking layer on the sacrificial layer; removing a portion of the blocking layer, where a portion of the blocking layer remains such that no gap exists between the blocking layer and the sacrificial layer and the remaining blocking layer is adhered to the mask layer; removing a portion of the sacrificial layer such that a gap is created between the blocking layer and the first step, where a portion of the sacrificial layer remains such that the blocking layer adhered to the mask layer remains; etching the mask layer beneath the gap; and processing the substrate through the gap in the mask layer.

Abstract: The present invention is a photonic logic circuit for multimode optical signals. The device includes a laser cavity having at least four conduits, the combination forming a substantially X-shaped construction. An output is attached to each conduit for transmission of the optical signals from the cavity. At least one input is connected to the laser cavity. The input is connected to an upper or lower edge of the laser cavity. These are the edges that do not include conduits. A bias contact is connected to the cavity and the two lower conduits. The bias contact is used to pump the photonic device. Preset contacts are attached to each of the upper two conduits and their respective outputs. The preset contacts are used to control the logic function of the photonic logic device. Altering current pump settings between the respective contacts controls the direction of lasing between outputs of the photonic device and the logic function performed.

Abstract: A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device on the substrate; forming an active-layer pumping structure on the optical device; forming facets in the optical device with at least two different orientations; and coating a user-definable number of dielectric layers onto the facets. The dielectric layers may be deposited in single dielectric layers or in pairs of dielectric layers. Single layers are useful for forming optical amplifiers while dielectric pairs are useful for forming lasers.

Abstract: A method of measuring reflectivity of a semiconductor laser facet by first fabricating first and second semiconductor lasers. The reflectance of the facets of the lasers are then determined. The threshold current densities of the lasers are then measured. If the reflectance of the first facet of the first semiconductor laser is modified then setting u=1, x=1, and y=1. If the reflectance of the first facet and the second facet of the first semiconductor laser are modified to the same extent then setting u=1, x=1, and y=0.5. The threshold current density of the first semiconductor laser after reflectivity modification is then measured. The reflectance of the modified first semiconductor laser is then calculated as follows: R1=(u){(R0)Exp[x−(2y[(1/L1)−(1/L2)]L1(J1−J3)/(J1−J2))]}.

Abstract: A method of simultaneously depositing dielectric layers on both facets of an optical device and devices made therefrom. The steps of the method are selecting a substrate; forming an optical device on the substrate; forming an active-layer pumping structure on the optical device; forming facets in the optical device with at least two different orientations; and coating a user-definable number of dielectric layers onto the facets. The dielectric layers may be deposited in single dielectric layers or in pairs of dielectric layers. Single layers are useful for forming optical amplifiers while dielectric pairs are useful for forming lasers.

Abstract: An optically controlled laser device is used to perform digital logic functions. The device comprises a single mode semiconductor laser including a waveguide for coupling light into the lasing caving at an angle at or near normal incidence with respect to the laser radiation generated by the laser. The single mode properties of the laser are achieved by index guiding. The coupled light interacts with the laser radiation in a small region of the lasing cavity creating a perturbation that quenches the laser output, whereby input of the coupled light enables the laser device to perform logic functions.

Abstract: The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of the optical structure and alternating sacrificial and intermediate layers are fabricated on the device. A mask layer is deposited on the structure, with openings created in the layers to allow use of an etchant. User-defined portions of the spacer layers are subsequently removed with the etchant to create air gaps between the intermediate layers.