Abstract: In a semiconductor manufacturing method, an emitter region (211) and a base enhancement region (207) are formed to provide linear voltage, capacitance and low resistance characteristics. In the manufacturing method, a semiconductor device (200) is formed on a silicon substrate layer (101) with an epitaxial layer (203). Trenches (233) are cut into the epitaxial layer (203) and filled with oxide (601) to provide reduced junction capacitance and reduced base resistance. The emitter region (211) and the base enhancement region (207) are simultaneously formed through an anneal process.

Abstract: A data processing system having a local memory bus, a main memory coupled to the local memory bus and a host central processing unit coupled to the local memory bus includes a single input/output controller for interfacing a plurality of input/output devices to the local memory bus. The input/output controller includes a plurality of input/output device controllers, each input/output device controller being adapted to be connected to at least one input/output device, a single microprocessor for managing the overall operations of the input/output controller, a single buffer memory for storing a program of instructions for the microprocessor and temporarily storing data received from the input/output devices and a gate array for interfacing all of the input/output device controllers to the local memory bus.

Abstract: Two sail structures are disclosed for use in propelling a movable body, such as a ski, skate, iceboat or the like, over a solid surface. One sail structure uses the lateen configuration and includes a triangular shaped sail with an upper spar and lower boom for holding the sail in an open, triangular form; as well as a mast, connectable to the spar and boom, for supporting the sail in a lateen configuration. The other sail structure includes a vertical mast and a horizontal boom connected in a "cross. " A first right-triangular sail is connected at its three corners to the forward end of the boom, the top of the mast and the coupling point of the mast and boom. A second right-triangular sail has its edges connected along the mast and boom, between the coupling point and the top of the mast and between the coupling point and the rearwad end of the boom.

Abstract: Copolymers containing 40 to 90 mole % of repeat units ##STR1## and correspondingly 10 to 60 mole % of repeat units ##STR2## where Q and Q' are --SO.sub.2 -- or --CO-- and the number of --SO.sub.2 -- groups is 3 to 25% of the total number of --SO.sub.2 -- and --CO-- groups.

Abstract: Aromatic polyethers are made by reacting i) an equimolar mixture of a bisphenol of formula ##STR1## in which Y is a direct link, --O--, --S--, --SO.sub.2 --, --CO-- or a divalent hydrocarbon radical, and an aromatic dihalo compound or ii) a halophenol, in which dihalo compound or halophenol the halogen atoms are activated by ortho or para --SO.sub.2 -- or --CO-- groups, with an alkali metal carbonate or bicarbonate. At least some of the halophenol and/or dihalo compound is fluorine containing. The amount of carbonate or bicarbonate is such that there is between 1 and 1-x/2 atoms of alkali metal per phenol group, where x is the fraction of activated halogen atoms that are fluorine.

Abstract: Aromatic polyetherketones and polyether sulphones are prepared from a hydrated alkali metal bisphenate by heating a substantially equimolar mixture of the bisphenate and an activated aromatic dihalide in the presence of an aromatic sulphone to distil off the water, preferably at atmospheric pressure, and then heating at temperatures in the range 250.degree. to 400.degree. C. to effect polymerization.