Patents by Inventor John L. Heaton

John L. Heaton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Selective epitaxial growth of gallium arsenide with selective orientation
    Patent number: 4467521
    Abstract: A method of fabricating semiconductor devices on semi-insulating GaAs substrates is provided. Pre-etched holes in the substrate are covered with a dielectric which is etched to expose the substrate only at the bottom of the holes. Epitaxial growth of active GaAs in the holes may then proceed with a single crystallographic orientation. The dielectric covering the sidewalls of the holes prevents unwanted random growth and poor surface morphology of the active area.
    Type: Grant
    Filed: August 15, 1983
    Date of Patent: August 28, 1984
    Assignee: Sperry Corporation
    Inventors: Frank H. Spooner, Charles R. Snider, John L. Heaton