Patents by Inventor John L. Huber

John L. Huber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8319283
    Abstract: A semiconductor device includes a source region within a semiconductor substrate, a drain region within the semiconductor substrate, a control gate over the semiconductor substrate and between the source region and the drain region, a first gate between the control gate and the drain region, and a first doped region within the semiconductor region and between the control gate and the first gate. The method of forming the semiconductor device may include depositing an electrode material over the semiconductor substrate, patterning the electrode material to form a control gate and a first gate, implanting a first doped region within the semiconductor substrate between the control gate and the first gate while using the control gate and the first gate as a mask, and implanting a source region within the semiconductor substrate.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: November 27, 2012
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Won Gi Min, John L. Huber, Jiang-Kai Zuo
  • Publication number: 20100301403
    Abstract: A semiconductor device includes a source region within a semiconductor substrate, a drain region within the semiconductor substrate, a control gate over the semiconductor substrate and between the source region and the drain region, a first gate between the control gate and the drain region, and a first doped region within the semiconductor region and between the control gate and the first gate. The method of forming the semiconductor device may include depositing an electrode material over the semiconductor substrate, patterning the electrode material to form a control gate and a first gate, implanting a first doped region within the semiconductor substrate between the control gate and the first gate while using the control gate and the first gate as a mask, and implanting a source region within the semiconductor substrate.
    Type: Application
    Filed: May 29, 2009
    Publication date: December 2, 2010
    Inventors: WON GI MIN, John L. Huber, Jiang-Kai Zuo
  • Patent number: 5505152
    Abstract: A new windsurfing harness line unit is disclosed. Previous harness lines have two open and independent ends whereas the present disclosure provides a hollow braided tube or rope that is connected to these ends, holding them as one unit firmly to the boom of the windsurfing rig. While under sail the unit can be adjusted either for or aft along the boom by grasping either of the said ends with one hand and pushing in the desired direction, thereby repositioning the unit to a more desired or balanced position.
    Type: Grant
    Filed: May 18, 1995
    Date of Patent: April 9, 1996
    Inventor: John L. Huber