Patents by Inventor John L. Lemon

John L. Lemon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wraparound gate structure
    Patent number: 12648171
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a wraparound gate structure and methods of manufacture. The structure includes: a channel region comprising semiconductor material; an isolation structure surrounding the channel region; a divot within the isolation structure; and a gate structure comprising gate material within the divot and surrounding the channel region.
    Type: Grant
    Filed: May 23, 2023
    Date of Patent: June 2, 2026
    Assignee: GLOBALFOUNDRIES U.S. Inc.
    Inventors: John L. Lemon, Hong Yu, Haiting Wang, Hui Zhan
  • WRAPAROUND GATE STRUCTURE
    Publication number: 20240395932
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a wraparound gate structure and methods of manufacture. The structure includes: a channel region comprising semiconductor material; an isolation structure surrounding the channel region; a divot within the isolation structure; and a gate structure comprising gate material within the divot and surrounding the channel region.
    Type: Application
    Filed: May 23, 2023
    Publication date: November 28, 2024
    Inventors: John L. LEMON, Hong YU, Haiting WANG, Hui ZHAN
  • Lateral bipolar transistor structure with inner and outer spacers and methods to form same
    Patent number: 11888050
    Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.
    Type: Grant
    Filed: December 2, 2021
    Date of Patent: January 30, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: John L. Lemon, Alexander M. Derrickson, Haiting Wang, Judson R. Holt
  • LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH INNER AND OUTER SPACERS AND METHODS TO FORM SAME
    Publication number: 20230083044
    Abstract: Embodiments of the disclosure provide a lateral bipolar transistor structure with inner and outer spacers, and related methods. A lateral bipolar transistor structure may have an emitter/collector (E/C) layer over an insulator. The E/C layer has a first doping type. A first base layer is on the insulator and adjacent the E/C layer. The first base layer has a second doping type opposite the first doping type. A second base layer is on the first base layer and having the second doping type. A dopant concentration of the second base layer is greater than a dopant concentration of the first base layer. An inner spacer is on the E/C layer and adjacent the second base layer. An outer spacer is on the E/C layer and adjacent the inner spacer.
    Type: Application
    Filed: December 2, 2021
    Publication date: March 16, 2023
    Inventors: Alexander M. Derrickson, John L. Lemon, Haiting Wang, Judson R. Holt