Patents by Inventor John L. Stickney

John L. Stickney has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electroless atomic layer deposition
    Patent number: 9803285
    Abstract: A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.
    Type: Grant
    Filed: February 25, 2014
    Date of Patent: October 31, 2017
    Assignee: National Technology & Engineering Solutions of Sandia, LLC
    Inventors: David Bruce Robinson, Patrick J. Cappillino, Leah B. Sheridan, John L. Stickney, David M. Benson
  • METHOD OF MAKING PHASE CHANGE MATERIALS ELECTROCHEMICAL ATOMIC LAYER DEPOSITION
    Publication number: 20090011577
    Abstract: A method of making phase change materials on a substrate by electrochemical atomic layer deposition, which includes sequentially electrodepositing at least one atomic layer of a first element of a first solution and at least one atomic layer of a second element of a second solution on a substrate; and repeating the sequential electrodepositing until at least one film of a phase change material is formed on the substrate.
    Type: Application
    Filed: July 6, 2007
    Publication date: January 8, 2009
    Applicant: IBM CORPORATION (YORKTOWN)
    Inventors: Qiang Huang, Xiaoyan Shao, John L. Stickney, Venkatram Venkatasamy
  • Digital electrochemical etching of compound semiconductors
    Patent number: 5385651
    Abstract: A method for the digital electrochemical etching of compound semiconductors in an electrochemical flow cell system in which alternating electrochemical potentials are applied between a reference electrode and the compound semiconductor sufficient to strip portions, preferably atomic layers, of the elements of compound semiconductors from the compound semiconductors.
    Type: Grant
    Filed: May 28, 1993
    Date of Patent: January 31, 1995
    Assignee: University of Georgia Research Foundation
    Inventors: John L. Stickney, Qing Lei, Choong K. Rhee
  • Method to electrochemically deposit compound semiconductors
    Patent number: 5320736
    Abstract: A method to electrochemically deposit semiconductors and for the electrochemical formation of epitaxial thin-film, single-crystalline compound semiconductors comprising alternating electrodeposition of atomic layers of selected pairs of elements using underpotential deposition.
    Type: Grant
    Filed: May 6, 1991
    Date of Patent: June 14, 1994
    Assignee: University of Georgia Research Foundation
    Inventors: John L. Stickney, Brian W. Gregory, Ignacio Villegas