Patents by Inventor John L. Walters

John L. Walters has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5489797
    Abstract: An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.
    Type: Grant
    Filed: April 11, 1995
    Date of Patent: February 6, 1996
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Tsiu C. Chan, Frank R. Bryant, John L. Walters
  • Patent number: 5478771
    Abstract: An interconnect structure, and method for forming same, is suitable for use in integrated circuits such as SRAM devices. The structure uses masking of a polycrystalline silicon interconnect level to move a P-N junction to a region within a polycrystalline silicon interconnect line, rather than at the substrate. This P-N junction can then be shorted out using a refractory metal silicide formed on the polycrystalline silicon interconnect structure.
    Type: Grant
    Filed: December 19, 1994
    Date of Patent: December 26, 1995
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Tsiu C. Chan, Frank R. Bryant, John L. Walters
  • Patent number: 5246883
    Abstract: A method is provided for forming contact vias in an integrated circuit. Initially, a first buffer layer is formed over an insulating layer in an integrated circuit. The first buffer layer has a different etch rate from the insulating layer. A second buffer layer is then formed over the first buffer layer, with the second buffer layer having an etch rate which is faster than the first buffer layer. An isotropic etch is performed to create an opening through the second buffer layer and a portion of the first buffer layer. Because the second buffer layer etches faster than the first buffer layer, the slant of the sideswalls of the opening can be controlled. An anisotropic etch is then performed to complete formation of the contact via.
    Type: Grant
    Filed: February 6, 1992
    Date of Patent: September 21, 1993
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Yih-Shung Lin, Lun-Tseng Lu, Fu-Tai Liou, Che-Chia Wei, John L. Walters
  • Patent number: 5133800
    Abstract: Materials for cryogenic refrigerator regenerators are formed by a high yield spark erosion cell. The materials are made of erbium or dysprosium and are spherical shaped. The spheres have a diameter range of 150 .mu.m to 400 .mu.m with a packing factor of at least 50%. The materials are made by disposing chunks of a starting material into a liquid dielectric in a spark chamber, agitating the chunks, impressing a spark voltage in order to cause melting of the chunks and formation of spherical particles, and collecting the particles at the bottom of the spark chamber. The particles may then be gathered, dried, and separated.
    Type: Grant
    Filed: March 11, 1991
    Date of Patent: July 28, 1992
    Assignee: General Electric Company
    Inventors: Robert A. Ackermann, John L. Walter
  • Patent number: 5065225
    Abstract: A semiconductor device is described in which a conductive layer overlaps a dielectric layer forming a composite electrical device deposited over selected portions of a semiconductor substrate chemically isolating the conductive layer portion of the composite electrical device from the substrate, thereby preventing difffusion of dopant material through the dielectric layer into and out of the conductive layer while simultaneously allowing for tunneling of electrons through the dielectric layer to and from the conductive layer and the semiconductor substrate.
    Type: Grant
    Filed: July 31, 1990
    Date of Patent: November 12, 1991
    Assignee: SGS-Thomson Microelectronics, Inc.
    Inventors: Frank R. Bryant, John L. Walters
  • Patent number: 5038645
    Abstract: Wear resistant cutting tools are comprised of cutting tools implanted with at least one element selected from the group consisting of, chlorine, fluorine, bromine, iodine, sulfur, indium, gallium and tin. The elements are implanted within the cutting tools in at least an effective amount to increase the wear resistance of the insert, up to an amount that does not substantially impair the hot hardness and toughness of the tool.In a method for lubricating the interface between a cutting tool and a workpiece in a lathe turning operation, at least one element selected from the group consisting of fluorine, bromine, iodine, sulfur, indium, gallium and tin are implanted in the tool. The elements are implanted so that the elements can lubricate the interface between the cutting edge and workpiece during turning without substantially impairing the hot hardness and toughness of the cutting tool.
    Type: Grant
    Filed: June 18, 1990
    Date of Patent: August 13, 1991
    Assignee: General Electric Company
    Inventors: John L. Walter, David W. Skelly, William P. Minnear, William R. Reed, Jr.
  • Patent number: 4759905
    Abstract: Apparatus is provided for the production of ultrafine powder. The powder is produced by spark erosion within an electric discharge cell. The starting material for production of the powder is a body in chunk form of the material to be pulverized. The material is contained in an electric discharge cell having a fine mesh screen bottom. The cell and its contents are immersed in a dielectric fluid such as water, liquified gas or an organic base liquid. The cell and its contents are vibrated to cause the chunks to separate repeatedly and momentarily. A sparking voltage is impressed repeatedly through the body to develop sparks between confronting portions of separated chunk surfaces. Small particles produced as a result of the sparking fall through the screen of the cell and are collected as product.
    Type: Grant
    Filed: April 3, 1987
    Date of Patent: July 26, 1988
    Assignee: General Electric Company
    Inventors: John L. Walter, Ami E. Berkowitz
  • Patent number: 4416751
    Abstract: A ferrofluid comprised of composite particles comprised of polymer-enmeshed magnetic metallic particles in indefinite suspension in a carrier fluid is produced by providing a pair of electrodes formed of a composition which will produce the desired magnetic metallic particles, immersing the electrodes in an organic dielectric liquid, applying a pulsed electric potential between the electrodes, adjusting the gap therebetween until there is an electric discharge eroding an electrode producing magnetic metallic particles enmeshed in polymer, recovering the magnetic material from the dielectric liquid and dispersing the magnetic material in a carrier fluid producing ferrofluid.
    Type: Grant
    Filed: September 24, 1981
    Date of Patent: November 22, 1983
    Assignee: General Electric Co.
    Inventors: Ami E. Berkowitz, John L. Walter
  • Patent number: 4415830
    Abstract: An improved inlead construction for an electric lamp is disclosed which utilizes an iron alloy containing sufficient silicon to avoid transformation of the inlead from the alpha ferrite phase to the gamma austenite phase at lamp operation temperatures. This precludes debilitating deformation of the inlead wires caused by on-off cycling of the lamp and concomitant cycling of the wire through the alpha to gamma transformation range. Such deformation can lead to structural or operational failure if the inleads become disconnected or electrically shorted from the resistive filament during lamp operation. In a preferred lamp construction, a pair of the improved inlead wires serve as the sole means of physical support for a resistive incandescent filament directly connected thereto and said inlead wires can further be coated with a dissimilar metal for higher lamp loading requirements in order to help avoid iron migration which can produce deterioration of the resistive incandescent filament.
    Type: Grant
    Filed: August 31, 1981
    Date of Patent: November 15, 1983
    Assignee: General Electric Company
    Inventors: John W. Pugh, Francis W. Pikus, James A. Graves, John E. McMillan, John L. Walter
  • Patent number: 4381244
    Abstract: A ferrofluid comprised of composite particles comprised of polymer-enmeshed magnetic metallic particles in indefinite suspension in a carrier fluid is produced by providing a pair of electrodes formed of a composition which will produce the desired magnetic metallic particles, immersing the electrodes in an organic dielectric liquid, applying a pulsed electric potential between the electrodes adjusting the gap therebetween until there is an electric discharge eroding an electrode producing magnetic metallic particles enmeshed in polymer, recovering the magnetic material from the dielectric liquid and dispersing the magnetic material in a carrier fluid producing ferrofluid.
    Type: Grant
    Filed: August 13, 1981
    Date of Patent: April 26, 1983
    Assignee: General Electric Company
    Inventors: Ami E. Berkowitz, John L. Walter
  • Patent number: 4300950
    Abstract: Amorphous metal alloys having good magnetic and physical properties including elevated temperature stability, ductility and saturation flux density contain iron, boron and silicon in proportions of 80-84, 12-15 and 1-8 atom percent respectively.
    Type: Grant
    Filed: May 4, 1979
    Date of Patent: November 17, 1981
    Assignee: General Electric Company
    Inventors: Fred E. Luborsky, John L. Walter
  • Patent number: 4217135
    Abstract: Iron-boron-silicon ternary amorphous alloys having high saturation magnetization, high crystallization temperature and low coercivity are provided.
    Type: Grant
    Filed: November 29, 1978
    Date of Patent: August 12, 1980
    Assignee: General Electric Company
    Inventors: Fred E. Luborsky, John L. Walter
  • Patent number: 4058415
    Abstract: A directionally solidified casting comprising improved high temperature properties is provided having a cobalt-base matrix and consisting essentially of, on a weight basis, 10-20% nickel, 8.1-25% tungsten, 0-10% chromium, 10-23% tantalum, 0.1-1.5% carbon, the balance being cobalt. Embedded in the matrix is an aligned tantalum carbide reinforcing fibrous phase.
    Type: Grant
    Filed: October 30, 1975
    Date of Patent: November 15, 1977
    Assignee: General Electric Company
    Inventor: John L. Walter
  • Patent number: 3944416
    Abstract: A directionally solidified casting having improved high temperature properties is provided having a nickel-base matrix and comprising in weight percent of at least 2% rhenium and at least 6% tungsten, but less than 4% aluminum and less than 7% chromium. Embedded in the matrix is an aligned tantalum carbide reinforcing fibrous phase.
    Type: Grant
    Filed: June 24, 1974
    Date of Patent: March 16, 1976
    Assignee: General Electric Company
    Inventor: John L. Walter
  • Patent number: D324613
    Type: Grant
    Filed: November 21, 1989
    Date of Patent: March 17, 1992
    Inventors: Timothy M. O'Donnell, John L. Walters