Patents by Inventor John L. Zilko

John L. Zilko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
    Patent number: 4830982
    Abstract: Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1.times.10.sup.7 ohm/cm have been achieved.
    Type: Grant
    Filed: June 4, 1987
    Date of Patent: May 16, 1989
    Assignees: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Andrew G. Dentai, Charles H. Joyner, Jr., Timothy W. Weidman, John L. Zilko
  • Semi-insulating group III-V based compositions doped using bis arene titanium sources
    Patent number: 4782034
    Abstract: Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by an MOCVD process through the use of bis arene titanium sources, such as cyclopentadienyl cycloheptatrienyl titanium and bis (benzene) titanium.
    Type: Grant
    Filed: June 4, 1987
    Date of Patent: November 1, 1988
    Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
    Inventors: Andrew G. Dentai, Charles H. Joyner, Jr., Timothy W. Weidman, John L. Zilko
  • Method of improving current confinement in semiconductor lasers by inert ion bombardment
    Patent number: 4523961
    Abstract: A method of producing patternable resistive regions in III-V compound semiconductor devices and a resulting device structure having improved current characteristics. III-V semiconductor substrates are irradiated with inert ions to produce a resistive region therein. At least one epitaxial layer is grown over the substrate while maintaining the resistive characteristics within the substrate. A second resistive region is then formed in at least the top epitaxial layer. This second resistive region is aligned with the first one in order to minimize current spread through the device.
    Type: Grant
    Filed: November 12, 1982
    Date of Patent: June 18, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Robert L. Hartman, Louis A. Koszi, Richard S. Williams, John L. Zilko