Abstract: Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.

Abstract: A method and apparatus for operating an imager pixel that includes the act of applying a relatively small first polarity voltage and a plurality of pulses of a second polarity voltage on the gate of a transfer transistor during a charge integration period.

Abstract: Image sensors and color filter arrays for in-pixel charge summing and interlaced readout modes may be provided. An image sensor that supports charge summing and interlaced readout modes may include an array of pixels with pairs of adjacent green, red, and blue light-sensitive pixels. An image sensor may implement an in-pixel charge summing readout mode in which charges from pairs of pixels are summed onto a common node and then read out from the common node. An image sensor may implement an interlaced readout mode in which image data is read out from alternating rows of the image sensor. An image sensor may use a shared readout scheme in which a group of four pixels is formed from two pairs of commonly-colored pixels. The four pixels may share circuitry such as a reset transistor, a buffer transistor, and a row select transistor and may connect to a single readout line.

Abstract: Imaging devices having reduced fixed pattern noise are disclosed. The fixed pattern noise in the imaging devices is reduced by measuring and adjusting the spectral characteristics of the imager device on a pixel by pixel basis. The fixed pattern noise of the pixel cells are changed by modifying the absorption, reflectance, refractive index, shape, and/or micro structure of the material.

Abstract: Imager devices having an array of photosensors, each photosensor having at least two doped regions. The two doped regions are each independently tailored to a particular wavelength.

Abstract: A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.

Abstract: A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.

Abstract: A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.

Abstract: A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.

Abstract: A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage VRST—LOW greater than ground, but less than a maximum voltage which can be stored at the storage node.

Abstract: An imaging device and method for operating the device. The imaging device comprises a pixel array having a plurality of pixels arranged in rows and columns. At least one pixel of the array comprises a photosensor and a first reset circuit responsive to a first reset control signal for resetting the photosensor. A first terminal of the first reset circuit is coupled to the photosensor and a second terminal of the first reset circuit is configured to receive a first resetting voltage from a control line.

Abstract: A method of operating an imager to have increased capacitance on a pixel output or column output line during most reset signal and pixel signal sampling operations from the line. The increased capacitance is achieved by switching in multiple sample and hold capacitors during the sampling operations.

Abstract: Methods and apparatuses for reducing dark current and hot pixels in CMOS image sensors. A pixel apparatus includes a photosensor capable of generating dark current, a floating diffusion region coupled to the photosensor by way of a charge transfer transistor, a rest transistor connected between the floating diffusion region and an array pixel supply voltage. The array supply voltage varies between first and second voltages when sampling pixel signals from the pixel.

Abstract: Methods, systems and apparatuses proving a high dynamic range imager. Multiple photosensor integration periods are used to capture pixel signal information. A transistor gate is used to remove electrons from the photosensor between the two successive integration periods providing a non-linear pixel response characteristic having a knee point. Each pixel is calibrated for the knee point which is used during adjustment of the pixel output signal. Each pixel may also be calibrated with an arbitrary signal response curve for multiple light intensities.

Abstract: Methods, systems and apparatuses for using regular and/or dark pixels of a pixel array in either a fixed or dynamic fashion to compensate for fixed pattern noise.

Abstract: A pixel having no dedicated reset control line. By using the voltage on the column line to control the gate of the reset transistor, there is no need to provide a dedicate reset control line.

Abstract: A method and apparatus are provided for operation of an image sensor during signal readout. During a reset operation the gate of a reset transistor coupled to the storage node receives a voltage greater than a threshold voltage to produce a reset of the storage node. During a period where photogenerated charges stored at the storage node are read out the gate of the reset transistor receives a voltage VRST—LOW greater than ground, but less than a maximum voltage which can be stored at the storage node.

Abstract: A method of operating an imager to have increased capacitance on a pixel output or column output line during most reset signal and pixel signal sampling operations from the line. The increased capacitance is achieved by switching in multiple sample and hold capacitors during the sampling operations.

Abstract: A pixel with a photosensor and a transfer transistor having a split transfer gate. A first section of the transfer gate is connectable to a first voltage source while a second section of the transfer gate is connectable to a second voltage source. Thus, during a charge integration period of a photosensor, the two sections of the transfer gate may be oppositely biased to decrease dark current while controlling blooming of electrons within and out of the pixel cell. During charge transfer the two gate sections may be commonly connected to a positive voltage sufficient to transfer charge from the photosensor to a floating diffusion region.

Abstract: Imager devices having an array of photosensors, each photosensor having at least two doped regions. The two doped regions are each independently tailored to a particular wavelength.