Abstract: A thermally conductive material that includes an alloy which includes indium, zinc, magnesium or a combination thereof is described herein. Also, a semiconductor package comprising a thermal interface material which includes solder and particles dispersed throughout the solder, the particles being of thermal conductivity greater than or equal to about 80 W/m-K is described herein. In one described embodiment, a semiconductor package includes a thermal interface material which includes at least one lanthanide element. In yet another embodiment disclosed herein, a solder preform construction includes a solder and a structure within the solder, the solder being of a first composition and the structure being of a second composition which has a lower melting point than the first composition.

Abstract: Lead free solder compositions are described herein that include at least one solder material; at least one dopant material, wherein the dopant is present in the material in an amount of less than about 1000 ppm, and wherein the solder composition is substantially lead free. Several doped solder compositions described herein comprise at least one solder material, at least one phosphorus-based dopant and at least one copper-based dopant. Methods of forming doped solder materials include: a) providing at least one solder material; b) providing at least one phosphorus-based dopant; c) providing at least one copper-based dopant, and d) blending the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant to form a doped solder material.

Abstract: The invention includes a semiconductor package which comprises a semiconductor substrate and a heat spreader. A thermal interface material thermally connects the substrate to the heat spreader. The thermal interface material consists essentially of In, Zn, and one or more elements selected from the group consisting of Mg, Ca, Nb, Ta, B, Al, Ce, Ti and Zr. The invention also includes a composition consisting essentially of In and Zn. The Zn concentration within the composition is from about 0.5 weight % to about 3 weight %. The invention also includes a composition consisting essentially of In, Zn and one or more of Mg, Ca, Nb, Ta, B, Al, Ce, Ti and Zr.