Patents by Inventor John Latza

John Latza has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070044405
    Abstract: An insulated concrete form (ICF) is disclosed having a body. The body has a front wall and an opposing rear wall. The body includes at least one vertical passageway disposed therein that extends from the top and bottom surfaces of the body. The front, rear and side walls have an outer shell and an inner core, and the outer shell has an insert which extends from the outer shell to the inner core. A male interlock is located on the one wall and a female interlock is located on a second wall. The insulated concrete form is produced by using an insert molding process. Alternatively, the insulated concrete form may be produced by using a multiple density molding process.
    Type: Application
    Filed: August 28, 2006
    Publication date: March 1, 2007
    Inventors: Richard Straub, John Latza
  • Patent number: 5571329
    Abstract: To minimize contamination of gas flow lines and reactor surfaces from high impurity concentrations present in the CVD reactor, control of the dopant gas supply is located closely adjacent to the reactor input port and the dopant gas supply line is separately vented. First and second dopant gas supplies and a diluent gas supply are connected to branch lines which converge to form the dopant supply line. A solenoid valve is situated in the main dopant supply line as close to the input port as possible. A vent line is connected to the dopant supply line, prior to the solenoid valve. The etchant and silicon gas supplies are each connected to the reactor input by a separate supply line. The etchant and silicon gas supply lines are vented separately from the dopant gas supply line.
    Type: Grant
    Filed: March 28, 1995
    Date of Patent: November 5, 1996
    Assignee: GI Corporation
    Inventors: Joseph Chan, Dennis Garbis, John Sapio, John Latza
  • Patent number: 5360509
    Abstract: Significant reductions in the cost of fabrication of epitaxial semiconductor devices without sacrifice of functional characteristics is achieved by eliminating the conventional but costly polishing procedure, instead subjecting the substrate to grinding, cleaning and etching processes in which the grinding removes material from the surface to a depth of at least 65 microns and the etching further removes material to a depth of about 6-10 microns, the grinding preferably being carried out in two steps, the first being a coarse step and the second being a fine step, with the rotated grinding elements dwelling at their respective last grinding positions for a short period of time. The result is the equivalent of the prior art polishing procedure which took considerably longer to carry out and which therefore was much more costly.
    Type: Grant
    Filed: March 8, 1993
    Date of Patent: November 1, 1994
    Assignee: GI Corporation
    Inventors: Gregory Zakaluk, Dennis Garbis, Joseph Y. Chan, John Latza, Lawrence LaTerza