Abstract: A metallization system (10) suitable for use in a semiconductor component and a method for fabricating the metallization system (10). The metallization system (10) includes a dielectric material (20) disposed on a major surface (14) of a substrate (12). The dielectric material (20) contains a dielectric filled plug (26) over a conductor (19). A metal filled plug (38) extends through the dielectric filled plug (26). The metal of the metal filled plug (38) electrically contacts the conductor (19). The metallization system (10) may be fabricated by etching a via (24) in the dielectric material (20) and filling the via (24) with a dielectric material (26) having a dielectric constant that is greater than the dielectric constant of the dielectric material (20) disposed on the major surface. A via (34) is formed in the dielectric material (26) that fills the via (24) and the via (34) is filled with a metal.