Abstract: A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.

Abstract: A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.

Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.

Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.

Abstract: A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer.

Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.

Abstract: This invention relates to diamond and more particularly to diamond produced by chemical vapour deposition (hereinafter referred to as CVD). According to a first aspect of the invention, there is provided a layer of single crystal CVD diamond of high quality having a thickness of at least 2 mm.

Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.

Abstract: This invention relates to diamond and more particularly to diamond produced by chemical vapour deposition (hereinafter referred to as CVD). According to a first aspect of the invention, there is provided a layer of single crystal CVD diamond of high quality having a thickness of at least 2 mm.

Abstract: A method of bonding a diamond compact comprising a polycrystalline mass of diamond and a bonding phase which contains free-silicon to a substrate is provided. The method includes the steps of contacting a surface of the compact with carbon or nitrogen or a mixture thereof under conditions suitable to cause free-silicon in the surface to react with the carbon and/or nitrogen and thereafter bonding that surface to the substrate, preferably by means of a braze. In a preferred form of the invention, the surface which is bonded to the substrate is acid cleaned after contact of that surface with carbon or nitrogen or a mixture thereof.

Abstract: A diamond-containing body is provided which is useful particularly as a tool insert. The body comprises a layer of CVD diamond presenting a working surface defining a cutting edge. The layer of CVD diamond is bonded to a substrate along an interface. A pattern of spaced, curved grooves extends from the interface into the substrate up to a depth of 200 microns and extends across substantially the whole of the interface.

Abstract: A CVD diamond layer for use as an insert in an abrasive tool characterized by the following features:(i) the layer contains boron dopant atoms in a concentration of at least 0.05 atomic percent;(ii) an average tensile rupture strength of at least 600 MPa with the nucleation phase in tension, and at least 300 MPa with the growth face in tension, both such tensile rupture strengths being measured by a three point bend test on a sample 18 mm long, 2 mm wide and a thickness of 1.4 mm or smaller.