Abstract: A light source includes a substrate, an array of semiconductor structures grown on the substrate, and multi-color micro-LEDs grown on surfaces of the array of semiconductor structures. Each semiconductor structure of the array of semiconductor structures has a shape of a truncated pyramid. The light source includes multiple sets of micro-LEDs formed on top surfaces of multiple sets of semiconductor structures of the array of semiconductor structures, or formed on the top surfaces and/or multiple sidewall surfaces of the array of semiconductor structures. The multiple sets of micro-LEDs are configured to emit light of multiple colors.

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

Abstract: A light source includes an array of micro-light emitting diodes (micro-LEDs), an array of micro-lenses, and a bonding layer bonding the array of micro-lenses to the array of micro-LEDs. Each micro-LED of the array of micro-LEDs includes a first mesa structure formed in a plurality of semiconductor layers. The array of micro-lenses is bonded to a first semiconductor layer of the plurality of semiconductor layers by the bonding layer. The first semiconductor layer includes an array of second mesa structures formed therein. The first mesa structure and the second mesa structure are on opposite sides of the plurality of semiconductor layers. Each second mesa structure of the array of second mesa structures is aligned with a respective micro-lens of the array of micro-lenses and the first mesa structure of a respective micro-LED of the array of micro-LEDs.

Abstract: A light source comprises a backplane wafer with electrical circuits fabricated thereon, and an array of LEDs coupled to the backplane wafer. Each LED of the array of LEDs comprises a mesa structure including semiconductor epitaxial layers and characterized by inwardly tilted mesa sidewalls, a high-refractive index material region (e.g., with a refractive index greater than about 1.75, such as equal to or greater than a refractive index of the semiconductor epitaxial layers) surrounding the semiconductor epitaxial layers of the mesa structure and including outwardly tilted sidewalls, and a reflective layer on the outwardly tilted sidewalls of the high-refractive index material region. In one example, each LED of the array of LEDs also include a passivation layer on the inwardly tilted mesa sidewalls of the mesa structure.

Abstract: A method of forming a strain relaxation layer in an epitaxial crystalline structure, the method comprising: providing a crystalline template layer comprising a material with a first natural relaxed in-plane lattice parameter; forming a first epitaxial crystalline layer on the crystalline template layer, wherein the first epitaxial crystalline layer has an initial electrical conductivity that is higher than the electrical conductivity of the crystalline template layer; forming a second epitaxial crystalline layer on the first epitaxial crystalline layer, wherein the second epitaxial crystalline layer has an electrical conductivity lower than the initial electrical conductivity of the first epitaxial crystalline layer and comprises a material with a second natural relaxed in-plane lattice parameter that is different to the first natural relaxed in-plane lattice parameter of the crystalline template layer; forming pores in the first epitaxial crystalline layer by electrochemical etching of the first epitaxial cr

Abstract: A monolithic LED array precursor comprising a plurality of LED structures sharing a first semiconductor layer, wherein the first semiconductor layer defines a plane of the LED array precursor, each LED structure comprising (i) a second semiconductor layer on the first semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the second semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the second semiconductor layer has sloped sides, (ii) a third semiconductor layer on the second semiconductor layer, having an upper surface portion parallel to the plane of the LED array precursor, the third semiconductor layer having a regular trapezoidal cross-section normal to the upper surface portion, such that the third semiconductor layer has sloped sides parallel to the sloped sides of the second semiconductor layer, (iii) a fourth semiconductor layer on the third semiconductor layer, having an upper surface portion

Abstract: An optical device comprising a light emitting structure having substantially vertical sidewalls, the light emitting structure comprising an active layer, the active layer being configured to emit light when an electrical current is applied to the device; an electrically insulating, optically transparent spacer layer having an internal face facing the sidewalls of the light emitting structure and an opposing external face, wherein the spacer layer is configured to enhance light extraction from the active layer; and a reflective, electrically conducting mirror layer disposed on the external face of the spacer layer.

Abstract: A method of forming an optical device, the method comprising the steps of forming spacers on the substantially vertical sidewalls of a sacrificial mesa, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face contacting the mesa, and a second opposing external face; depositing a reflective, electrically conducting material so as to form a mirror layer on the external face of the spacers; removing the sacrificial mesa so as to form a pocket between the internal faces of the spacers; installing a die having substantially vertical sidewalls into the pocket between the internal faces of the spacers.

Abstract: A light emitting diode (LED) device includes a substrate and a plurality of mesa structures. Each mesa structure includes a layer of a first semiconductor material, a porous layer of the first semiconductor material on the layer of the first semiconductor material, and a layer of a second semiconductor material on the porous layer. The porous layer is characterized by an areal porosity ?15%. The second semiconductor material is characterized by a lattice constant greater than a lattice constant of the first semiconductor material. Each mesa structure also includes an active region on the layer of the second semiconductor material and configured to emit red light, a p-contact layer on the active region, a dielectric layer on sidewalls of the p-contact layer and the active region, and an n-contact layer in physical contact with at least a portion of sidewalls of the layer of the second semiconductor material.

Abstract: A method includes obtaining a first wafer including a first substrate and epitaxial layers that include a first semiconductor layer, a light-emitting region, and a second semiconductor layer; bonding a second substrate to the second semiconductor layer on the first wafer; removing the first substrate from the first wafer to expose the first semiconductor layer; depositing a reflector layer on the first semiconductor layer; forming a first metal bonding layer on the reflector layer; bonding a second metal bonding layer on a backplane wafer to the first metal bonding layer; removing the second substrate to expose the second semiconductor layer; and etching through the second semiconductor layer, the light-emitting region, the first semiconductor layer, the reflector layer, the first metal bonding layer, and the second metal bonding layer to form an array of mesa structures for an array of micro-light emitting diodes.

Abstract: A method of forming an optical device, the method comprising the steps of forming a mesa, the mesa comprising an active layer configured to emit light from a first light emitting surface of the mesa when subjected to an electrical current, the mesa further comprising a second surface opposite the light emitting surface and substantially vertical sidewalls, forming spacers on the mesa sidewalls, the spacers being formed from a first electrically insulating, optically transparent material, and having an internal face facing the mesa sidewalls, and an opposing external face, depositing a first layer of transparent conducting oxide on the light emitting surface of the mesa, the transparent conducting oxide having an internal face facing the second surface of the mesa, and an opposing external face, and depositing a layer of reflective, electrically conducting material over the transparent conducting oxide and external faces of the spacers.

Abstract: Disclosed herein are light emitting diode devices having one or more high reflectivity wide bonding pad electrodes and methods of fabricating thereof.

Abstract: Disclosed herein are light emitting diode devices having one or more high reflectivity mesa sidewall electrodes and methods of fabricating thereof.

Abstract: An engineered wafer includes a plurality of mesa structures that includes a first mesa structure and a second mesa structure. The first mesa structure includes a first porous layer of a first semiconductor material having a first lattice constant, and a first layer of a second semiconductor material on the first porous layer. The first porous layer is characterized by a first porosity. The second semiconductor material is characterized by a second lattice constant greater than the first lattice constant. The second mesa structure includes a second porous layer of the first semiconductor material, and a second layer of the second semiconductor material on the second porous layer. The second porous layer is characterized by a second porosity different from the first porosity. Active regions grown on the first and second layers of the second semiconductor material are configured to emit light of different colors.

Abstract: A light emitting diode (LED) device includes a substrate and a plurality of mesa structures. Each mesa structure includes a layer of a first semiconductor material, a porous layer of the first semiconductor material on the layer of the first semiconductor material, and a layer of a second semiconductor material on the porous layer. The porous layer is characterized by an areal porosity ?15%. The second semiconductor material is characterized by a lattice constant greater than a lattice constant of the first semiconductor material. Each mesa structure also includes an active region on the layer of the second semiconductor material and configured to emit red light, a p-contact layer on the active region, a dielectric layer on sidewalls of the p-contact layer and the active region, and an n-contact layer in physical contact with at least a portion of sidewalls of the layer of the second semiconductor material.