Patents by Inventor John M. Andrews, Jr.

John M. Andrews, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Article comprising a high value resistor
    Patent number: 5140299
    Abstract: In an electronic circuit that normally includes a high-value resistor, the resistive function may be usefully provided by a thin dielectric layer. Electric current is transported through the layer by quantum tunneling. In one embodiment, a resistor useful for VLSI applications is provided, requiring only a single contact window.
    Type: Grant
    Filed: June 19, 1990
    Date of Patent: August 18, 1992
    Assignee: AT&T Bell Laboratories
    Inventors: John M. Andrews, Jr., San-Chin Fang
  • Method of manufacturing semiconductor devices involving the detection of impurities
    Patent number: 4978915
    Abstract: The TVS method is a voltammetric method for detecting mobile ionic impurities in the dielectric layer of a MOS capacitor structure. Disclosed here is a method of semiconductor device fabrication involving a modified TVS method in which the voltage is changed in discrete steps rather than varied continuously, and charge, rather than induced current, is measured. The modified TVS method can be faster than conventional TVS, and calibration is unnecessary.
    Type: Grant
    Filed: November 7, 1989
    Date of Patent: December 18, 1990
    Assignee: AT&T Bell Laboratories
    Inventors: John M. Andrews, Jr., Nadia Lifshitz, Gerald Smolinsky
  • Method of manufacturing semiconductor devices, involving the detection of water
    Patent number: 4938847
    Abstract: Disclosed is a method of semiconductor device fabrication involving the detection of water in a dielectric layer that is part of the body of such device. At relatively high values of a voltage applied across the dielectric layer, water that is present in the dielectric decomposes and releases protons. Varying the applied voltage gives rise to a displacement current. The released protons contribute an ionic component to the displacement current. The ionic component is detected.
    Type: Grant
    Filed: August 18, 1989
    Date of Patent: July 3, 1990
    Assignee: American Telephone and Telegraph Company
    Inventors: John M. Andrews, Jr., Nadia Lifshitz, Gerald Smolinsky
  • Fabrication of palladium anode for X-ray lithography
    Patent number: 4319967
    Abstract: A fabrication process for making palladium-plated target anodes for X-ray lithographic systems is characterized by a unique sequence of surface preparation, plating and annealing steps. Anodes made by the process have been operated reliably at high-power levels for extended periods of time.
    Type: Grant
    Filed: November 1, 1979
    Date of Patent: March 16, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: Frederick Vratny, John M. Andrews, Jr.