Patents by Inventor John M. Boyd

John M. Boyd has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9359673
    Abstract: A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.
    Type: Grant
    Filed: June 5, 2012
    Date of Patent: June 7, 2016
    Assignee: Lam Research Corporation
    Inventors: Hyungsuk Alexander Yoon, Mikhail Korolik, Fritz C. Redeker, John M. Boyd, Yezdi Dordi
  • Patent number: 9287110
    Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: March 15, 2016
    Assignee: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Patent number: 8844461
    Abstract: A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: September 30, 2014
    Assignee: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Patent number: 8691027
    Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: April 8, 2014
    Assignee: Lam Research Corporation
    Inventors: Mikhail Korolik, Michael Ravkin, John de Larios, Fritz C. Redeker, John M. Boyd
  • Patent number: 8623456
    Abstract: A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: January 7, 2014
    Assignee: Lam Research Corporation
    Inventors: Hyungsuk Alexander Yoon, Mikhail Korolik, Fritz C. Redeker, John M. Boyd, Yezdi Dordi
  • Patent number: 8622020
    Abstract: An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: January 7, 2014
    Assignee: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Yezdi Dordi, Fritz C. Redeker
  • Publication number: 20130280917
    Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.
    Type: Application
    Filed: June 14, 2013
    Publication date: October 24, 2013
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Patent number: 8485120
    Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: July 16, 2013
    Assignee: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Patent number: 8403727
    Abstract: A method for producing a normalized surface on a substrate for a chemical mechanical planarization process is provided. The method initiates with grinding a surface of the substrate with a first surface associated with a first planarization length. The method includes planarizing the surface of the substrate with a second surface associated with a second planarization length. Here, the second planarization length being less than the first planarization length. A system for processing a semiconductor substrate is also provided.
    Type: Grant
    Filed: March 31, 2004
    Date of Patent: March 26, 2013
    Assignee: Lam Research Corporation
    Inventors: Fred C. Redeker, John M. Boyd, Yezdi Dordi, Sabir A. Majumder, Simon McClatchie
  • Publication number: 20130061887
    Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.
    Type: Application
    Filed: November 6, 2012
    Publication date: March 14, 2013
    Inventors: Mikhail Korolik, Michael Ravkin, John deLarios, Fritz C. Redeker, John M. Boyd
  • Publication number: 20130040460
    Abstract: A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
    Type: Application
    Filed: September 6, 2012
    Publication date: February 14, 2013
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Hyungsuk Alexander Yoon, Mikhail Korolik, Fritz C. Redeker, John M. Boyd, Yezdi Dordi
  • Patent number: 8330072
    Abstract: A substrate processing system includes a first, movable surface tension gradient device, a dicing device and a system controller. The first, movable surface tension gradient device is capable of supporting a first process within a first meniscus. The first meniscus being supported between the first surface tension gradient device and a first surface of the substrate. The first movable surface tension gradient device capable of being moved relative to the first surface of the substrate. The dicing device is oriented to a desired dicing location. The desired dicing location being encompassed by the meniscus. The system controller is coupled to the dicing device and the surface tension gradient device. The system controller includes a process recipe. A method for dicing a substrate is also described.
    Type: Grant
    Filed: January 13, 2010
    Date of Patent: December 11, 2012
    Assignee: Lam Research Corporation
    Inventors: John M. Boyd, Fred C. Redeker
  • Patent number: 8323420
    Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: December 4, 2012
    Assignee: Lam Research Corporation
    Inventors: Mikhail Korolik, Michael Ravkin, John deLarios, Fritz C. Redeker, John M. Boyd
  • Patent number: 8314027
    Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: November 20, 2012
    Assignee: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Patent number: 8287647
    Abstract: The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head dispenses small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface.
    Type: Grant
    Filed: April 17, 2007
    Date of Patent: October 16, 2012
    Assignee: Lam Research Corporation
    Inventors: Hyungsuk Alexander Yoon, Mikhail Korolik, Fritz C. Redeker, John M. Boyd, Yezdi Dordi
  • Publication number: 20120248219
    Abstract: A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.
    Type: Application
    Filed: June 5, 2012
    Publication date: October 4, 2012
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Hyungsuk Alexander Yoon, Mikhail Korolik, Fritz C. Redeker, John M. Boyd, Yezdi Dordi
  • Publication number: 20120045897
    Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
    Type: Application
    Filed: October 28, 2011
    Publication date: February 23, 2012
    Applicant: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Publication number: 20110306203
    Abstract: An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
    Type: Application
    Filed: August 25, 2011
    Publication date: December 15, 2011
    Applicant: Lam Research Corporation
    Inventors: Yezdi Dordi, John M. Boyd, Fritz C. Redeker, William Thie, Tiruchirapalli Arunagiri, Hyungsuk Alexander Yoon
  • Patent number: 8069813
    Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
    Type: Grant
    Filed: April 16, 2007
    Date of Patent: December 6, 2011
    Assignee: Lam Research Corporation
    Inventors: William Thie, John M. Boyd, Fritz C. Redeker, Yezdi Dordi, John Parks, Tiruchirapalli Arunagiri, Aleksander Owczarz, Todd Balisky, Clint Thomas, Jacob Wylie, Alan M. Schoepp
  • Patent number: 8026605
    Abstract: An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: September 27, 2011
    Assignee: Lam Research Corporation
    Inventors: Yezdi Dordi, John M. Boyd, Fritz C. Redeker, William Thie, Tiruchirapalli Arunagiri, Hyungsuk Alexander Yoon