Abstract: An integrated circuit includes a circuit aging sensor that provides information regarding operational degradation of the integrated circuit due to aging. The aging sensor includes a ring oscillator that includes inverting drivers and tuning circuits. The drivers are sequentially coupled to form a ring. An output of each of the drivers is coupled to an input of one of the tuning circuits, and an input of each of the drivers is coupled to an output of one of the tuning circuits. Each of the tuning circuits includes a first signal path and a second signal path. The first signal path selectably applies a tuning delay to an input signal received from one of the drivers for provision to an input of a successive one of the drivers. The second signal path selectably routes the signal received around the tuning delay to the input of the successive one of the drivers.

Abstract: An integrated circuit includes a circuit aging sensor that provides information regarding operational degradation of the integrated circuit due to aging. The aging sensor includes a ring oscillator that includes inverting drivers and tuning circuits. The drivers are sequentially coupled to form a ring. An output of each of the drivers is coupled to an input of one of the tuning circuits, and an input of each of the drivers is coupled to an output of one of the tuning circuits. Each of the tuning circuits includes a first signal path and a second signal path. The first signal path selectably applies a tuning delay to an input signal received from one of the drivers for provision to an input of a successive one of the drivers. The second signal path selectably routes the signal received around the tuning delay to the input of the successive one of the drivers.

Abstract: A method for identifying outlier semiconductor devices from a plurality of semiconductor devices includes performing at least one electrical test to obtain electrical test data including at least one test parameter, applying at least a first data transform processing methodology to the electrical test data to generate processed test data, and applying a second data transform processing methodology that is different from the first data transform processing methodology to process the processed test data. The second data transform processing methodology applies an outlier test limit to identify non-outlier devices that comprise semiconductor devices from the semiconductor devices that conform to the outlier test limit and outlier devices that do not conform to the outlier test limit. The semiconductor devices are dispositioned using the outlier identification results. At least one of the data transform processing methodologies can include statistics.

Abstract: A method for designing an integrated circuit including estimating a test escape rate for tests of interest, a test coverage calculator and a system for estimating a test escape rate for tests of interest associated with a portion of an integrated circuit (IC) die. In one embodiment the method includes the step of: estimating a test escape rate for a set of fault tests to be performed on an IC under design based on an estimated yield and a combined coverage of the set of fault tests; the combined coverage accounting for overlapping coverage among the set of fault tests.

Abstract: A method for designing an integrated circuit including estimating a test escape rate for tests of interest, a test coverage calculator and a system for estimating a test escape rate for tests of interest associated with a portion of an integrated circuit (IC) die. In one embodiment the method includes the step of: estimating a test escape rate for a set of fault tests to be performed on an IC under design based on an estimated yield and a combined coverage of the set of fault tests; the combined coverage accounting for overlapping coverage among the set of fault tests.

Abstract: According to one embodiment of the invention, a method for estimating the failure rate of semiconductor devices includes obtaining accelerated stress duration data for a plurality of semiconductor devices, determining which of the semiconductor devices fail, classifying the defects for the failed semiconductor devices, determining a distribution model for the accelerated stress duration data, determining a set of parameters for the distribution model, determining a relative proportion of each defect classification to the total number of defect classifications, determining temperature and voltage acceleration factors for each defect classification, identifying actual operating conditions for the semiconductor devices, comparing the actual operating conditions for the semiconductor device with the distribution model, and determining a defect ratio for the semiconductor devices at the actual operating conditions for a predetermined time period based on the comparison.