Patents by Inventor John M. Dallesasse

John M. Dallesasse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High efficiency group III-V compound semiconductor solar cell with oxidized window layer
    Patent number: 9356162
    Abstract: The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: May 31, 2016
    Assignee: MicroLink Devices, Inc.
    Inventors: Noren Pan, Christopher Youtsey, David S. McCallum, Victor C. Elarde, John M. Dallesasse
  • HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER
    Publication number: 20120227798
    Abstract: The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
    Type: Application
    Filed: May 29, 2012
    Publication date: September 13, 2012
    Applicant: MICROLINK DEVICES, INC.
    Inventors: Noren PAN, Christopher YOUTSEY, David S. MCCALLUM, Victor C. ELARDE, John M. DALLESASSE
  • HIGH EFFICIENCY GROUP III-V COMPOUND SEMICONDUCTOR SOLAR CELL WITH OXIDIZED WINDOW LAYER
    Publication number: 20100186822
    Abstract: The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
    Type: Application
    Filed: January 28, 2010
    Publication date: July 29, 2010
    Applicant: MICROLINK DEVICES, INC.
    Inventors: Noren PAN, Christopher YOUTSEY, David S. MCCALLUM, Victor C. ELARDE, John M. DALLESASSE
  • Method for making aluminum gallium arsenide semiconductor device with native oxide layer
    Patent number: 5696023
    Abstract: A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375 C to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: December 9, 1997
    Assignee: The Board Of Trustees Of The University Of Illinois
    Inventors: Nick Holonyak, Jr., John M. Dallesasse
  • Native oxide of an aluminum-bearing group III-V semiconductor
    Patent number: 5567980
    Abstract: A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
    Type: Grant
    Filed: January 26, 1995
    Date of Patent: October 22, 1996
    Assignee: The Board Of Trustees Of The University Of Illinois
    Inventors: Nick Holonyak, Jr., John M. Dallesasse
  • Semiconductor devices with native aluminum oxide regions
    Patent number: 5373522
    Abstract: A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
    Type: Grant
    Filed: September 7, 1993
    Date of Patent: December 13, 1994
    Assignee: The Board Of Trustees Of The University Of Illinois
    Inventors: Nick Holonyak, Jr., John M. Dallesasse
  • AlGaAs native oxide
    Patent number: 5262360
    Abstract: A method of forming a native oxide from an aluminum-bearing Group III-V semiconductor material is provided. The method entails exposing the aluminum-bearing Group III-V semiconductor material to a water-containing environment and a temperature of at least about 375.degree. C. to convert at least a portion of said aluminum-bearing material to a native oxide characterized in that the thickness of said native oxide is substantially the same as or less than the thickness of that portion of said aluminum-bearing Group III-V semiconductor material thus converted. The native oxide thus formed has particular utility in electrical and optoelectrical devices, such as lasers.
    Type: Grant
    Filed: June 24, 1991
    Date of Patent: November 16, 1993
    Assignee: The Board Of Trustees Of The University Of Illinois
    Inventors: Nick Holonyak, Jr., John M. Dallesasse