Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.

Abstract: A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.

Abstract: An apparatus for cleaning a substrate is disclosed. The apparatus having a first head unit and a second head unit. The first head unit is positioned proximate to the surface of the substrate and has a first row of channels defined within configured to supply a foam to the surface of the substrate. The second head unit is positioned substantially adjacent to the first head unit and proximate to the surface of the substrate. A second and a third row of channels are defined within the second head unit. The second row of channels is configured to supply a fluid to the surface of the substrate. The third row of channels is configured to apply a vacuum to the surface of the substrate.

Abstract: Methods for repairing a carbon depleted low-k material in a low-k dielectric film layer of a semiconductor wafer include providing a proximity head with a plurality of nozzles disposed on a surface of the proximity head. A repair chemistry having a hydrocarbon group is applied to a portion of the semiconductor wafer that includes carbon depleted low-k material, through the proximity head. The application is used to deliver carbon from the repair chemistry into the carbon depleted low-k material so as to cause replacement of a hydrogen ion within a hydroxyl group in the carbon depleted low-k material with carbon containing hydrocarbon group of the repair chemistry. The carbon containing hydrocarbon group forms a bond with suspended oxygen ion of the hydroxyl group thereby substantially repairing the low-k dielectric layer. The semiconductor wafer is then moved to expose other portions of the semiconductor wafer to the repair chemistry.

Abstract: An apparatus for processing a substrate is provided. The apparatus includes a solid material having a support side and a contact side. The contact side has an outer surface, and the outer surface is configured to become softer relative to a remainder of the solid material when exposed to an activation solution. The apparatus includes a support structure configured to support the solid material from the support side of the solid material, such that the contact side of the solid material is oriented to face a surface of the substrate, when the substrate is present. Also provided is a gimbaled structure connected to the support structure. The gimbaled structure enabling the outer surface of the contact side to substantially align in a coplanar arrangement with the surface of the substrate, when the substrate is present. A force application structure is coupled to the gimbaled structure.

Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid.

Abstract: A system for cleaning a substrate includes a carrier and a cleaning station. The carrier is capable of holding the substrate and is movably coupled to a pair of guide tracks extending a length of the system. The cleaning station includes a force applicator and a gate. The force applicator has an applicator length and is operatively coupled to the cleaning station. The force applicator is rotatable and is adjusted to a first height off the surface of the carrier as the substrate is being cleaned. The force applicator has a hollow structure with internal channels and openings dispersed throughout the applicator length to dispense cleaning solution to substrate surface. The gate is affixed to a trailing edge of the force applicator and is set to a second height off the surface of the carrier. The gate includes a gate length that at least spans the applicator length.

Abstract: A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.

Abstract: A method for cleaning a substrate is provided. The method initiates with disposing a fluid layer having solid components therein to a surface of the substrate. A shear force directed substantially parallel to the surface of the substrate and toward an outer edge of the substrate is then created. The shear force may result from a normal or tangential component of a force applied to a solid body in contact with the fluid layer in one embodiment. The surface of the substrate is rinsed to remove the fluid layer. A cleaning system and apparatus are also provided.

Abstract: A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.

Abstract: A method for cleaning a substrate is provided. The method initiates with applying an activation solution to a surface of the substrate. The activation solution and the surface of the substrate are contacted with a surface of a solid cleaning surface. The activation solution is absorbed into a portion of the solid cleaning element and then the substrate or the solid cleaning surface is moved relative to each other to clean the surface of the substrate. A method for cleaning the surface of the substrate with a solid cleaning element that experiences plastic deformation is also provided. Corresponding cleaning apparatuses are also provided.

Abstract: A system and method for preventing a pattern formed on a substrate from collapsing during a rinsing and drying phase of a fabrication operation includes determining a plurality of process parameters associated with a rinsing chemistry used during the rinsing operation. The process parameters define the characteristics of the rinsing chemistry and a substrate surface layer. A chemistry to reduce the surface tension of the rinsing chemistry (surface tension reducer) with at least one low surfactant chemical is identified based on the process parameters of the rinsing chemistry. The surface tension reducer is applied to the surface of the substrate such that the low surfactant chemical reduces the surface tension of the rinsing chemistry applied to the surface of the substrate thereby preventing the pattern from collapsing.

Abstract: A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.

Abstract: A method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters. The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid.

Abstract: A system and method for preventing a pattern formed on a substrate from collapsing during a rinsing and drying phase of a fabrication operation includes determining a plurality of process parameters associated with a rinsing chemistry used during the rinsing operation. The process parameters define the characteristics of the rinsing chemistry and a substrate surface layer. A chemistry to reduce the surface tension of the rinsing chemistry (surface tension reducer) with at least one low surfactant chemical is identified based on the process parameters of the rinsing chemistry. The surface tension reducer is applied to the surface of the substrate such that the low surfactant chemical reduces the surface tension of the rinsing chemistry applied to the surface of the substrate thereby preventing the pattern from collapsing.

Abstract: A method and system for cleaning opposed surfaces of a semiconductor wafer having particulate matter thereon. The method includes generating relative movement between a fluid and the substrate. The relative movement is in a direction that is transverse to a normal to one of the opposed surfaces and creates two spaced-apart flows. Each of the flows is adjacent to one of the opposed surfaces that is different from the opposed surface that is adjacent to the remaining flow of the plurality of flows. The fluid has coupling elements entrained therein, and the relative movement is established to impart sufficient drag upon a subset of the coupling elements to create movement of the coupling elements of the subset within the fluid. In this manner, a quantity of the drag is imparted upon the particulate matter to cause the particulate matter to move with respect to the substrate.

Abstract: A method and system for cleaning a surface, having particulate matter thereon, of a substrate features impinging upon the surface a jet of a liquid having coupling elements entrained therein. A sufficient drag force is imparted upon the coupling elements to have the same move with respect to the liquid and cause the particulate matter to move with respect to the substrate.

Abstract: Methods for rinsing and drying a substrate are provided. In one example, a method for rinsing and drying a substrate includes providing a substrate for processing and securing the substrate in a hollow spin chuck. The hollow spin chuck with the substrate positioned therein is rotated at a first rate of rotation while a rinsing agent and a surface tension modifying agent are dispensed at a position that is an approximate center of the spinning substrate on both an active surface and a backside surface of the substrate. The dispensing is moved from the approximate center of the spinning substrate radially outward towards a periphery of the substrate. The dispensing is then discontinued, and the hollow spin chuck with the substrate positioned therein is rotated at a second rate of rotation.

Abstract: An apparatus for cleaning edges of substrates is described. The present invention provides a cleaning mechanism that cleans particles off the edge of the wafer based on friction and/or a difference in tangential velocity at a point of contact between the wafer and the cleaning mechanism.

Abstract: A semiconductor processing system, such as a system for buffing or scrubbing both sides of a wafer at the same time, that includes a processing box for use with chemical solutions, a positioning device to position a semiconductor substrate, or other similar semiconductor material or device, and a placement device to place a buffing pad or scrubbing brush.