Abstract: A tunable infrared detector is provided that includes a substrate, a bottom wavelength detector formed over the substrate, a top wavelength detector formed over the first wavelength detector layer, and an interferometer filter formed over the top wavelength detector layer and the bottom wavelength detector layer. The interferometer filter is operatively configured to pass a first wavelength associated with a first portion of a predetermined band and a second wavelength associated with a second portion of the predetermined band to the top wavelength detector. The top wavelength detector is operatively configured to detect each wavelength associated with the first portion of the predetermined band and to transmit each wavelength associated with the second portion of the predetermined band to the bottom wavelength detector. The bottom wavelength detector is operatively configured to detect each wavelength associated with the second portion of the predetermined band.

Abstract: A tunable infrared detector is provided that includes a substrate, a bottom wavelength detector formed over the substrate, a top wavelength detector formed over the first wavelength detector layer, and an interferometer filter formed over the top wavelength detector layer and the bottom wavelength detector layer. The interferometer filter is operatively configured to pass a first wavelength associated with a first portion of a predetermined band and a second wavelength associated with a second portion of the predetermined band to the top wavelength detector. The top wavelength detector is operatively configured to detect each wavelength associated with the first portion of the predetermined band and to transmit each wavelength associated with the second portion of the predetermined band to the bottom wavelength detector. The bottom wavelength detector is operatively configured to detect each wavelength associated with the second portion of the predetermined band.

Abstract: A detector device for detecting incident radiation at particular wavelengths is disclosed. The device includes a base layer comprising a substrate. A resonant cavity is formed on the base layer between a pair of reflectors. One reflector is formed by a first reflector layer disposed in fixed relationship with respect to the base layer and the other reflector is formed by a second reflector layer disposed on a membrane in substantially parallel relationship to the substrate. A detector is provided within the cavity to absorb incident radiation therein for detection purposes. By placing the absorbing layer of the detector within the resonant cavity, high quantum efficiency can be achieved using very thin absorbing layers, thus significantly reducing the detector volume and hence noise. Various different arrangements of the detector device and different methods of fabricating the same are also disclosed.

Abstract: An electro-optic device (2) including a first part (4,6,10,16) of a first semiconductor technology and a second part (12,14) of a second semiconductor technology. The first and second parts are fabricated separately and the first part is bonded to the second part. The second part (12,14) includes light reflecting means (12) and the first part (4,6,10,16) comprises an optoelectronic hetero-structure (4,6,10,16) which, with the light reflecting means (12), forms the device (2). The device (2) comprises a modulator/detector or semiconductor laser structure.