Abstract: Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly.

Abstract: Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly.

Abstract: Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly.

Abstract: An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad. The device further comprises an intermetallic compound interface located between the bond pad and the wire and a silicon nitride or silicon carbonyl layer covering the intermetallic compound interface.

Abstract: Aspects of the disclosure pertain to a system and method for providing an electron blocking layer with doping control. The electron blocking layer is included in a semiconductor assembly. The electron blocking layer includes a lithium aluminate layer. The lithium aluminate layer promotes reduced diffusion of magnesium into a layer stack of the semiconductor assembly.

Abstract: An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad.

Abstract: An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad. The device further comprises an intermetallic compound interface located between the bond pad and the wire and a silicon nitride or silicon carbonyl layer covering the intermetallic compound interface.

Abstract: An apparatus comprises a first housing having a top surface and a bottom surface, a second housing having a top surface and a bottom surface, and one or more supports coupling the first housing to the second housing such that the first and second housings are electrically connected and the bottom surface of the first housing overlays the top surface of the second housing. The one or more supports are configurable in at least a first configuration wherein the bottom surface of the first housing and the top surface of the second housing are substantially contiguous with one another and a second configuration wherein the bottom surface of the first housing and the top surface of the second housing are separated by a space.

Abstract: An apparatus comprises a first housing having a top surface and a bottom surface, a second housing having a top surface and a bottom surface, and one or more supports coupling the first housing to the second housing such that the first and second housings are electrically connected and the bottom surface of the first housing overlays the top surface of the second housing. The one or more supports are configurable in at least a first configuration wherein the bottom surface of the first housing and the top surface of the second housing are substantially contiguous with one another and a second configuration wherein the bottom surface of the first housing and the top surface of the second housing are separated by a space.

Abstract: An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

Abstract: A method for managing playback of special feature content on an optical disc, comprising the steps of (A) storing a first disc specific information set for a particular disc in the memory of an optical disc player and (B) prior to playback of a main feature content, comparing a previously stored second disc specific information to the first disc specific information of a current disc and (C) if a match occurs between the first disc specific information and the second disc specific information, skipping the loading or playback of the special feature content on the optical disc and playing said main feature content.

Abstract: An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad.

Abstract: A method provides forming a photovoltaic (PV) cell. The PV cell may be, e.g. a heterojunction with intrinsic thin layer (HIT) cell. The method includes forming a crystalline semiconductor layer over a substrate. The crystalline semiconductor layer is heated above a melting temperature of the semiconductor. A portion of the crystalline semiconductor layer is thereby converted to a quenched amorphous semiconductor layer.

Abstract: A method of forming an electronic device bond pad includes providing an electronic device substrate having an Al bond pad located thereover. An aluminum layer is formed over the Al bond pad. A metal layer is formed located between the Al bond pad and the aluminum layer. The metal layer comprises one or more of Ni, Pd and Pt and has a total concentration of Ni, Pd and/or Pt of at least about 50 wt. %. A gold bond wire may be attached to the aluminum layer.

Abstract: An electronic device includes a substrate with a resistive element located thereover. The resistive element includes a semiconductor region. A read module is configured to determine a resistance of the resistive element. A programming module is configured to cause a current to flow through the semiconductor region. The current is sufficient to induce a change of morphology of at least a portion of the semiconductor region.

Abstract: An electronic device bond pad includes an Al layer located over an electronic device substrate. The Al layer includes an intrinsic group 10 metal located therein.

Abstract: An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.

Abstract: An electronic device bond pad includes an Al layer located over an electronic device substrate. The Al layer includes an intrinsic group 10 metal located therein.