Abstract: Various techniques for merging charge into and splitting charge from CCD's are described. Specifically disclosed in detail is a racetrack shaped charge coupled device (CCD), provided with special input and output stations operating on the principle of progressive charge read in and readout. During read in (which is a special case of charge merging), charge is injected in the direction of prevailing charge flow in the main channel of the CCD, with the injected charge packets being transferred laterally into the main charge stream while being stepped forward in the channel. During readout (which is a special case of charge splitting), charge is transferred from the main channel to an auxiliary channel through a plurality of interconnecting ports and, as during read in, transfer of a given charge packet takes place over a time period during which the charge packet is stepped forward in the main channel through several storage sites.

Abstract: This invention provides the structure for a two-phase charge coupled storage device. Alternate regions of thicker and thinner silicon dioxide are grown upon a silicon substrate. These silicon dioxide regions are covered with a layer of deposited, undoped polysilicon. A layer of silicon dioxide is grown over the polysilicon. Ion implantation is applied to cause isolated regions of conductivity in the polysilicon. Then contact windows are cut in the upper most layer of silicon dioxide exposing the polysilicon therethrough and a metal coating is deposited in the contact windows. Two-phase signals are applied to the resulting electrodes to advance charges at the surface of the silicon substrate.

Abstract: This invention provides the structure for a two-phase charge coupled storage device. Alternate regions of thicker and thinner silicon dioxide are grown upon a silicon substrate. These silicon dioxide regions are covered with a layer of deposited, undoped polysilicon. A layer of silicon dioxide is grown over the polysilicon. Ion implantation is applied to cause isolated regions of conductivity in the polysilicon. Then contact windows are cut in the upper most layer of silicon dioxide exposing the polysilicon therethrough and a metal coating is deposited in the contact windows. Two-phase signals are applied to the resulting electrodes to advance charges at the surface of the silicon substrate.

Abstract: Signals generated by an infrared (I.R.) detector are injected directly into a charge coupled device (CCD) by means of a DC biased electrode structure interposed between the detector and one of the clocked transfer electrodes of the CCD.